公开(公告)号：US08872351B2

公开(公告)日：2014-10-28

申请号：US13756833

申请日：2013-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangjin Moon ,  SuKyoung Kim ,  Kunsang Park ,  Byung Lyul Park ,  Sukchul Bang ,  Jin Ho An ,  Kyu-Ha Lee ,  Dosun Lee ,  Gilheyun Choi

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/04 ,  H01L23/12 ,  H01L23/498 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L23/49827 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Provided are semiconductor devices with a through electrode and methods of fabricating the same. The methods may include forming a via hole at least partially penetrating a substrate, the via hole having an entrance provided on a top surface of the substrate, forming a via-insulating layer to cover conformally an inner surface of the via hole, forming a buffer layer on the via-insulating layer to cover conformally the via hole provided with the via-insulating layer, the buffer layer being formed of a material whose shrinkability is superior to the via-insulating layer, forming a through electrode to fill the via hole provided with the buffer layer, and recessing a bottom surface of the substrate to expose the through electrode.

Abstract translation: 提供具有通孔的半导体器件及其制造方法。 所述方法可以包括形成至少部分地穿透基板的通孔，所述通孔具有设置在所述基板的顶表面上的入口，形成通孔绝缘层以保形地覆盖所述通孔的内表面，形成缓冲器 所述缓冲层由收缩性优于所述通孔绝缘层的材料形成，形成贯通电极以填充所述通孔，所述通孔设置在所述通孔绝缘层上， 与缓冲层一起凹陷基底的底表面以露出通孔。

公开(公告)号：US20130200526A1

公开(公告)日：2013-08-08

申请号：US13756833

申请日：2013-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangjin Moon ,  SuKyoung Kim ,  Kunsang Park ,  Byung Lyul Park ,  Sukchul Bang ,  Jin Ho An ,  Kyu-Ha Lee ,  Dosun Lee ,  Gilheyun Choi

IPC: H01L23/498

CPC classification number: H01L23/49827 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Provided are semiconductor devices with a through electrode and methods of fabricating the same. The methods may include forming a via hole at least partially penetrating a substrate, the via hole having an entrance provided on a top surface of the substrate, forming a via-insulating layer to cover conformally an inner surface of the via hole, forming a buffer layer on the via-insulating layer to cover conformally the via hole provided with the via-insulating layer, the buffer layer being formed of a material whose shrinkability is superior to the via-insulating layer, forming a through electrode to fill the via hole provided with the buffer layer, and recessing a bottom surface of the substrate to expose the through electrode.

Abstract translation: 提供具有通孔的半导体器件及其制造方法。 所述方法可以包括形成至少部分地穿透基板的通孔，所述通孔具有设置在所述基板的顶表面上的入口，形成通孔绝缘层以保形地覆盖所述通孔的内表面，形成缓冲器 所述缓冲层由收缩性优于所述通孔绝缘层的材料形成，形成贯通电极以填充所述通孔，所述通孔设置在所述通孔绝缘层上， 与缓冲层一起凹陷基底的底表面以露出通孔。