公开(公告)号：US09053948B2

公开(公告)日：2015-06-09

申请号：US14256232

申请日：2014-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-Hee Kim ,  Ho-Ki Lee ,  Gilheyun Choi ,  Kyu-Hee Han ,  Jongwon Hong

IPC: H01L29/06 ,  H01L21/764 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.

Abstract translation: 半导体器件可以包括衬底上的布线和层间绝缘结构，在布线之间。 布线可以包括含孔层，其包括远离衬底表面延伸的多个孔，其中孔中的一些孔具有随着与衬底的距离而增加的体积，直到达到孔的上方的气隙层 并且在布线的最上表面之下。

公开(公告)号：US20140312456A1

公开(公告)日：2014-10-23

申请号：US14256232

申请日：2014-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-Hee Kim ,  Ho-Ki Lee ,  Gilheyun Choi ,  Kyu-Hee Han ,  Jongwon Hong

IPC: H01L29/06 ,  H01L23/535

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.

Abstract translation: 半导体器件可以包括衬底上的布线和层间绝缘结构，在布线之间。 布线可以包括含孔层，其包括远离衬底表面延伸的多个孔，其中孔中的一些孔具有随着与衬底的距离而增加的体积，直到达到孔的上方的气隙层 并且在布线的最上表面之下。