公开(公告)号：US09666433B2

公开(公告)日：2017-05-30

申请号：US15130515

申请日：2016-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Badro Im ,  Yoonchul Cho ,  Sangyeol Kang ,  Daehyun Kim ,  Dongkak Lee ,  Jun-Noh Lee ,  Bonghyun Kim ,  Kongsoo Lee

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/0337 ,  H01L21/02112 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32055 ,  H01L21/32139

Abstract: Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

公开(公告)号：US20180350835A1

公开(公告)日：2018-12-06

申请号：US16049510

申请日：2018-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkak Lee

IPC: H01L27/11582

CPC classification number: H01L27/11582 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02658 ,  H01L21/76 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/10894 ,  H01L27/2409 ,  H01L27/2436

Abstract: Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.

公开(公告)号：US20150270345A1

公开(公告)日：2015-09-24

申请号：US14561360

申请日：2014-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heedon Hwang ,  Dongkak Lee ,  Min-Kyoung Lee

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/161 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L29/1033 ,  H01L29/161 ,  H01L29/7851 ,  H01L29/7854

Abstract: Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.

Abstract translation: 提供一种制造晶体管的方法。 该方法包括形成从衬底向上突出的鳍部，在衬底上形成器件隔离图案以覆盖翅片部分的侧壁的下部，在器件隔离图案中形成沟槽，沟槽暴露顶表面和 翅片部分的通道区域的侧壁，并且将IV族元件注入到鳍部分的沟道区域中以增加沟道区域的体积。

公开(公告)号：US20140120691A1

公开(公告)日：2014-05-01

申请号：US14049435

申请日：2013-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SangHyun Lee ,  Sungsam Lee ,  Dongkak Lee

IPC: H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76229 ,  H01L21/823431

Abstract: A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer.

Abstract translation: 提供一种制造半导体器件的方法。 形成从基板突出的翅片部。 形成牺牲层以覆盖翅片部分的顶表面和侧表面。 通过氧化牺牲层，在鳍部上形成栅极电介质。

公开(公告)号：US20130164907A1

公开(公告)日：2013-06-27

申请号：US13721598

申请日：2012-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkak Lee

IPC: H01L21/36 ,  H01L21/76

CPC classification number: H01L27/11582 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02658 ,  H01L21/76 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/10894 ,  H01L27/2409 ,  H01L27/2436

Abstract: Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.

Abstract translation: 提供了形成薄膜的方法以及制造包括该薄膜的半导体器件的方法。 薄膜形成方法可以包括提供有机硅源以在下层上形成硅籽晶层，所述硅种子层包括吸附在下层上的硅种子颗粒，以及提供无机硅源以在硅层上沉积硅膜 下层吸附有硅原子。

公开(公告)号：US09391172B2

公开(公告)日：2016-07-12

申请号：US14561360

申请日：2014-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heedon Hwang ,  Dongkak Lee ,  Min-Kyoung Lee

IPC: H01L29/10 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161

CPC classification number: H01L29/66795 ,  H01L29/1033 ,  H01L29/161 ,  H01L29/7851 ,  H01L29/7854

Abstract: Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.

Abstract translation: 提供一种制造晶体管的方法。 该方法包括形成从衬底向上突出的鳍部，在衬底上形成器件隔离图案以覆盖翅片部分的侧壁的下部，在器件隔离图案中形成沟槽，沟槽暴露顶表面和 翅片部分的通道区域的侧壁，并且将IV族元件注入到鳍部分的沟道区域中以增加沟道区域的体积。

公开(公告)号：US20160118401A1

公开(公告)日：2016-04-28

申请号：US14986383

申请日：2015-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkak Lee

IPC: H01L27/115 ,  H01L21/762 ,  H01L21/02 ,  H01L21/763

Abstract: Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.

公开(公告)号：US10424594B2

公开(公告)日：2019-09-24

申请号：US14986383

申请日：2015-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkak Lee

IPC: H01L21/76 ,  H01L27/11582 ,  H01L21/02 ,  H01L21/762 ,  H01L21/763 ,  H01L27/108 ,  H01L27/24

Abstract: Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.

公开(公告)号：US09257305B2

公开(公告)日：2016-02-09

申请号：US13721598

申请日：2012-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkak Lee

IPC: H01L21/76 ,  H01L21/36 ,  H01L21/02 ,  H01L21/762 ,  H01L21/763 ,  H01L27/108 ,  H01L27/115 ,  H01L27/24

CPC classification number: H01L27/11582 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02658 ,  H01L21/76 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/10894 ,  H01L27/2409 ,  H01L27/2436

Abstract: Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.

Abstract translation: 提供了形成薄膜的方法以及制造包括该薄膜的半导体器件的方法。 薄膜形成方法可以包括提供有机硅源以在下层上形成硅籽晶层，所述硅种子层包括吸附在下层上的硅种子颗粒，以及提供无机硅源以在硅层上沉积硅膜 下层吸附有硅原子。

公开(公告)号：US09111991B2

公开(公告)日：2015-08-18

申请号：US14049435

申请日：2013-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SangHyun Lee ,  Sungsam Lee ,  Dongkak Lee

IPC: H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76229 ,  H01L21/823431

Abstract: A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer.

Abstract translation: 提供一种制造半导体器件的方法。 形成从基板突出的翅片部。 形成牺牲层以覆盖翅片部分的顶表面和侧表面。 通过氧化牺牲层，在鳍部上形成栅极电介质。