Invention Grant
US09391172B2 Methods of shaping a channel region in a semiconductor fin using doping
有权
使用掺杂在半导体鳍片中形成沟道区域的方法
- Patent Title: Methods of shaping a channel region in a semiconductor fin using doping
- Patent Title (中): 使用掺杂在半导体鳍片中形成沟道区域的方法
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Application No.: US14561360Application Date: 2014-12-05
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Publication No.: US09391172B2Publication Date: 2016-07-12
- Inventor: Heedon Hwang , Dongkak Lee , Min-Kyoung Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2014-0033484 20140321
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L21/02 ; H01L29/66 ; H01L29/78 ; H01L29/161
Abstract:
Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.
Public/Granted literature
- US20150270345A1 TRANSISTORS AND METHODS OF FORMING THE SAME Public/Granted day:2015-09-24
Information query
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