公开(公告)号：US20150270345A1

公开(公告)日：2015-09-24

申请号：US14561360

申请日：2014-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heedon Hwang ,  Dongkak Lee ,  Min-Kyoung Lee

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/161 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L29/1033 ,  H01L29/161 ,  H01L29/7851 ,  H01L29/7854

Abstract: Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.

Abstract translation: 提供一种制造晶体管的方法。 该方法包括形成从衬底向上突出的鳍部，在衬底上形成器件隔离图案以覆盖翅片部分的侧壁的下部，在器件隔离图案中形成沟槽，沟槽暴露顶表面和 翅片部分的通道区域的侧壁，并且将IV族元件注入到鳍部分的沟道区域中以增加沟道区域的体积。

公开(公告)号：US09391172B2

公开(公告)日：2016-07-12

申请号：US14561360

申请日：2014-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heedon Hwang ,  Dongkak Lee ,  Min-Kyoung Lee

IPC: H01L29/10 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161

CPC classification number: H01L29/66795 ,  H01L29/1033 ,  H01L29/161 ,  H01L29/7851 ,  H01L29/7854

Abstract: Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.

Abstract translation: 提供一种制造晶体管的方法。 该方法包括形成从衬底向上突出的鳍部，在衬底上形成器件隔离图案以覆盖翅片部分的侧壁的下部，在器件隔离图案中形成沟槽，沟槽暴露顶表面和 翅片部分的通道区域的侧壁，并且将IV族元件注入到鳍部分的沟道区域中以增加沟道区域的体积。