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    TRANSISTORS AND METHODS OF FORMING THE SAME
    2.
    发明申请
    TRANSISTORS AND METHODS OF FORMING THE SAME 有权
    晶体管及其形成方法

    公开(公告)号：US20150270345A1

    公开(公告)日：2015-09-24

    申请号：US14561360

    申请日：2014-12-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Heedon Hwang ,  Dongkak Lee ,  Min-Kyoung Lee

    IPC: H01L29/10 ,  H01L29/06 ,  H01L29/161 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

    CPC classification number: H01L29/66795 ,  H01L29/1033 ,  H01L29/161 ,  H01L29/7851 ,  H01L29/7854

    Abstract: Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.

    Abstract translation: 提供一种制造晶体管的方法。 该方法包括形成从衬底向上突出的鳍部，在衬底上形成器件隔离图案以覆盖翅片部分的侧壁的下部，在器件隔离图案中形成沟槽，沟槽暴露顶表面和 翅片部分的通道区域的侧壁，并且将IV族元件注入到鳍部分的沟道区域中以增加沟道区域的体积。

    Methods of shaping a channel region in a semiconductor fin using doping
    3.
    发明授权
    Methods of shaping a channel region in a semiconductor fin using doping 有权
    使用掺杂在半导体鳍片中形成沟道区域的方法

    公开(公告)号：US09391172B2

    公开(公告)日：2016-07-12

    申请号：US14561360

    申请日：2014-12-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Heedon Hwang ,  Dongkak Lee ,  Min-Kyoung Lee

    IPC: H01L29/10 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161

    CPC classification number: H01L29/66795 ,  H01L29/1033 ,  H01L29/161 ,  H01L29/7851 ,  H01L29/7854

    Abstract: Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.

    Abstract translation: 提供一种制造晶体管的方法。 该方法包括形成从衬底向上突出的鳍部，在衬底上形成器件隔离图案以覆盖翅片部分的侧壁的下部，在器件隔离图案中形成沟槽，沟槽暴露顶表面和 翅片部分的通道区域的侧壁，并且将IV族元件注入到鳍部分的沟道区域中以增加沟道区域的体积。

    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 审中-公开
    半导体器件及其形成方法

    公开(公告)号：US20140124854A1

    公开(公告)日：2014-05-08

    申请号：US14154740

    申请日：2014-01-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Heedon Hwang ,  Ji-Young Min ,  Jongchul Park ,  Insang Jeon ,  Woogwan Shim

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/7827 ,  H01L27/10876 ,  H01L27/228 ,  H01L27/2436 ,  H01L29/66666 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146

    Abstract: Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.

    Abstract translation: 可以提供半导体器件及其形成方法。 半导体器件可以在衬底中包括沟槽。 半导体器件还可以包括在沟槽的相对侧壁内的体电极。 半导体器件还可以包括在本体电极和沟槽的相对侧壁之间的衬垫电极。 衬里电极可以包括在本体电极的侧壁和沟槽的相对侧壁中的一个之间的侧壁部分。

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