公开(公告)号：US09666433B2

公开(公告)日：2017-05-30

申请号：US15130515

申请日：2016-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Badro Im ,  Yoonchul Cho ,  Sangyeol Kang ,  Daehyun Kim ,  Dongkak Lee ,  Jun-Noh Lee ,  Bonghyun Kim ,  Kongsoo Lee

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/0337 ,  H01L21/02112 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32055 ,  H01L21/32139

Abstract: Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.