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公开(公告)号：US11742221B2
公开(公告)日：2023-08-29
申请号：US17376369
申请日：2021-07-15
发明人： Seung-Min Shin , Seok-Hoon Kim , Young-Hoo Kim , In-Gi Kim , Tae-Hong Kim , Sung-Hyun Park , Jin-Woo Lee , Ji-Hoon Cha , Yong-Jun Choi
IPC分类号： H01L21/67 , H01L21/02 , H01J37/32 , G02B27/09 , B23K26/352 , B08B7/00 , H01L29/66 , H10B41/27 , H10B43/27
CPC分类号： H01L21/67034 , B08B7/0042 , B23K26/352 , G02B27/0955 , H01J37/3244 , H01J37/32568 , H01L21/02098 , H01J2237/335 , H01L29/66545 , H01L29/66795 , H10B41/27 , H10B43/27
摘要： A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号：US11721565B2
公开(公告)日：2023-08-08
申请号：US16690498
申请日：2019-11-21
发明人： Yong Jun Choi , Seok Hoon Kim , Young-Hoo Kim , In Gi Kim , Sung Hyun Park , Seung Min Shin , Kun Tack Lee , Jinwoo Lee , Hun Jae Jang , Ji Hoon Cha
IPC分类号： H01L21/67 , H01L21/687 , B08B3/08
CPC分类号： H01L21/67167 , B08B3/08 , H01L21/67034 , H01L21/67051 , H01L21/67063 , H01L21/68707
摘要： A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.
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公开(公告)号：US10825698B2
公开(公告)日：2020-11-03
申请号：US15845236
申请日：2017-12-18
发明人： Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Kuntack Lee
摘要： Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.
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4.发明申请公开(公告)号：US20180366348A1
公开(公告)日：2018-12-20
申请号：US15845236
申请日：2017-12-18
发明人： Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Kuntack Lee
CPC分类号： H01L21/67034 , B08B3/08 , B08B2203/007 , F26B3/00 , F26B5/005 , H01L21/02057 , H01L21/02101 , H01L21/6704 , H01L21/67051 , H01L21/67109 , H01L21/67173 , H01L21/67219 , H01L21/67248
摘要： Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.
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公开(公告)号：US10029332B2
公开(公告)日：2018-07-24
申请号：US14706546
申请日：2015-05-07
发明人： Young-Hoo Kim , Il-Sang Lee , Yong-sun Ko , Chang-Gil Ryu , Kun-Tack Lee , Hyo-San Lee
IPC分类号： H01L21/00 , B23K26/146 , B08B7/00 , B08B3/10 , C11D11/00 , H01L21/67 , H01L21/687
摘要： A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.
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公开(公告)号：US11648594B2
公开(公告)日：2023-05-16
申请号：US16890490
申请日：2020-06-02
发明人： Seung Min Shin , Hun Jae Jang , Seok Hoon Kim , Young-Hoo Kim , In Gi Kim , Tae-Hong Kim , Kun Tack Lee , Ji Hoon Cha , Yong Jun Choi
IPC分类号： B08B7/00 , B08B3/10 , H01L21/67 , H01L21/687 , H01L21/311
CPC分类号： B08B7/0042 , B08B3/10 , B08B7/0064 , H01L21/31111 , H01L21/67051 , H01L21/67075 , H01L21/67098 , H01L21/67248 , H01L21/68764
摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.
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公开(公告)号：US20230052006A1
公开(公告)日：2023-02-16
申请号：US17703264
申请日：2022-03-24
发明人： Ji Hoon JEONG , Young-Hoo Kim , Sang Jine Park , Ji Hwan Park
IPC分类号： G03F7/32 , H01L21/67 , H01L21/027
摘要： An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.
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公开(公告)号：US20220084812A1
公开(公告)日：2022-03-17
申请号：US17318629
申请日：2021-05-12
发明人： Sung Hyun Park , Seo Hyun Kim , Seung Ho Kim , Young Chan Kim , Young-Hoo Kim , Tae-Hong Kim , Hyun Woo Nho , Seung Min Shin , Kun Tack Lee , Hun Jae Jang
摘要： A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.
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公开(公告)号：US11087996B2
公开(公告)日：2021-08-10
申请号：US16371461
申请日：2019-04-01
发明人： Seung-Min Shin , Seok-Hoon Kim , Young-Hoo Kim , In-Gi Kim , Tae-Hong Kim , Sung-Hyun Park , Jin-Woo Lee , Ji-Hoon Cha , Yong-Jun Choi
IPC分类号： H01L21/67 , H01L21/02 , H01J37/32 , G02B27/09 , B23K26/352 , B08B7/00 , H01L29/66 , H01L27/11556 , H01L27/11582
摘要： A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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10.发明授权公开(公告)号：US10985036B2
公开(公告)日：2021-04-20
申请号：US15827144
申请日：2017-11-30
发明人： Young-Hoo Kim , Sang-Jine Park , Yong-Jhin Cho , Yeon-Jin Gil , Ji-Hoon Jeong , Byung-Kwon Cho , Yong-Sun Ko , Kun-Tack Lee
IPC分类号： H01L21/67 , H01L21/687 , H01L21/02
摘要： A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.
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