公开(公告)号：US20230131222A1

公开(公告)日：2023-04-27

申请号：US17876266

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hae Won CHOI ,  Seung Min Shin ,  Sang Jine Park ,  Jae Won Shin ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Pil Kyun Heo

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

公开(公告)号：US11605545B2

公开(公告)日：2023-03-14

申请号：US16692051

申请日：2019-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hun Jae Jang ,  Seung Min Shin ,  Seok Hoon Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Jinwoo Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: H01L21/67 ,  B08B7/00

Abstract: A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

公开(公告)号：US11581182B2

公开(公告)日：2023-02-14

申请号：US17478619

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun Cho ,  Young Hoo Kim ,  Seung Min Shin ,  Tae Min Earmme ,  Kun Tack Lee ,  Hun Jae Jang ,  Eun Hee Jeang

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/428 ,  H01L21/687

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

公开(公告)号：US20200335361A1

公开(公告)日：2020-10-22

申请号：US16692051

申请日：2019-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hun Jae JANG ,  Seung Min Shin ,  Seok Hoon Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Jinwoo Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: H01L21/67 ,  B08B7/00

Abstract: A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

公开(公告)号：US11986921B2

公开(公告)日：2024-05-21

申请号：US17401105

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Ki Hong ,  Yong Hee Lee ,  Byoung Ho Kwon ,  Kun Tack Lee

IPC: B24B37/015 ,  B24B37/20 ,  B24B53/017 ,  H01L21/306 ,  H01L21/67

CPC classification number: B24B37/015 ,  B24B37/20 ,  B24B53/017 ,  H01L21/30625 ,  H01L21/67219

Abstract: A chemical mechanical polishing method is provided. A chemical mechanical polishing method comprising providing a polishing pad, supplying a first purging compound having a first temperature onto the polishing pad, supplying a first slurry having a third temperature onto the polishing pad supplied with the first purging compound, supplying a second purging compound having a second temperature lower than the first temperature onto the polishing pad, and supplying a second slurry having a fourth temperature lower than the third temperature onto the polishing pad supplied with the second purging compound.

公开(公告)号：US11648594B2

公开(公告)日：2023-05-16

申请号：US16890490

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Min Shin ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

CPC classification number: B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67098 ,  H01L21/67248 ,  H01L21/68764

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20220084812A1

公开(公告)日：2022-03-17

申请号：US17318629

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Park ,  Seo Hyun Kim ,  Seung Ho Kim ,  Young Chan Kim ,  Young-Hoo Kim ,  Tae-Hong Kim ,  Hyun Woo Nho ,  Seung Min Shin ,  Kun Tack Lee ,  Hun Jae Jang

IPC: H01L21/02 ,  H01L21/67 ,  G03F7/30 ,  G03F7/20

Abstract: A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

公开(公告)号：US12165866B2

公开(公告)日：2024-12-10

申请号：US17318629

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Park ,  Seo Hyun Kim ,  Seung Ho Kim ,  Young Chan Kim ,  Young-Hoo Kim ,  Tae-Hong Kim ,  Hyun Woo Nho ,  Seung Min Shin ,  Kun Tack Lee ,  Hun Jae Jang

IPC: H01L21/02 ,  H01L21/67 ,  G03F7/00 ,  G03F7/30

Abstract: A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

公开(公告)号：US11923216B2

公开(公告)日：2024-03-05

申请号：US17892677

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min Shin ,  Sang Jin Park ,  Hae Won Choi ,  Jang Jin Lee ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Jin Yeong Sung ,  Pil Kyun Heo

IPC: H01L21/67 ,  G03F7/16 ,  H01L21/677

CPC classification number: H01L21/67196 ,  G03F7/168 ,  H01L21/67017 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67225 ,  H01L21/67748

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

公开(公告)号：US11721565B2

公开(公告)日：2023-08-08

申请号：US16690498

申请日：2019-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Jun Choi ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Sung Hyun Park ,  Seung Min Shin ,  Kun Tack Lee ,  Jinwoo Lee ,  Hun Jae Jang ,  Ji Hoon Cha

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/08

CPC classification number: H01L21/67167 ,  B08B3/08 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/68707

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.