公开(公告)号：US20230131222A1

公开(公告)日：2023-04-27

申请号：US17876266

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hae Won CHOI ,  Seung Min Shin ,  Sang Jine Park ,  Jae Won Shin ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Pil Kyun Heo

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.