公开(公告)号：US20240038728A1

公开(公告)日：2024-02-01

申请号：US18356289

申请日：2023-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Aenee Jang ,  Wonil Lee

IPC: H01L25/065 ,  H10B80/00 ,  H01L23/31 ,  H01L23/544 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H10B80/00 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/05 ,  H01L24/08 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2223/54426 ,  H01L24/32 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/05147 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/32221 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1441

Abstract: A semiconductor package includes a first semiconductor chip, a plurality of second semiconductor chips stacked on the first semiconductor chip, and having widths narrower than a width of the first semiconductor chip, and a molded layer on an upper surface of the first semiconductor chip. The first semiconductor chip includes first front-surface pads, a first back-surface insulating layer divided into a first region and a second region, first back-surface pads in the first region, dummy pads in the second region, the dummy pads respectively having an upper surface on which a metal oxide film is disposed, and a first through-electrode electrically connecting the first front-surface pads and the first back-surface pads to each other. The plurality of second semiconductor chips respectively includes second front-surface pads, second back-surface pads, and a second through-electrode electrically connecting the second front-surface pads and the second back-surface pads to each other.

公开(公告)号：US11343739B2

公开(公告)日：2022-05-24

申请号：US16983436

申请日：2020-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyeob Oak ,  Jisoo Song ,  Wonil Lee

IPC: H04W36/08 ,  H04W36/00 ,  H04W84/04 ,  H04W74/08 ,  H04W4/70 ,  H04W88/08

Abstract: A method and apparatus are provided that controls the handover between DUs in an eNB including a CU and a DU. The method and system fuses 5G communication systems with IoT technology to transmission data at a high rate after 4G systems. The communication method and system is applied to intelligent services, based on 5G communication technology and IoT related technology. The method includes transmitting, to a source DU of the base station, a first message related to a handover; receiving, from the source DU, a second message for downlink data delivery information related to a PDU transmitted from the source DU to a terminal; receiving, from a target DU of the base station, a third message based on a random access procedure of the terminal toward the target DU; and transmitting, to the target DU, downlink data based on the downlink data delivery information after receiving the third message.

公开(公告)号：US11317278B2

公开(公告)日：2022-04-26

申请号：US16624064

申请日：2018-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Janghee Lee ,  Sejin Park ,  Wonil Lee

IPC: H04W12/037 ,  H04W76/19 ,  H04W12/106 ,  H04W36/08 ,  H04W80/02

Abstract: Disclosed is a fifth generation (5G) or pre-5G communication system for supporting data transmission rate higher than that of a fourth generation (4G) communication system such as long term evolution (LTE). The objective of the present disclosure is to detect a mismatch of an encryption parameter in a wireless communication system, and an operating method of a reception end includes the steps of: receiving, from a transmission end, a packet including information related to a serial number of the packet and an encryption parameter determined on the basis of the serial number; determining whether the encryption parameter determined by the reception end is mismatched, on the basis of the information related to the serial number and the encryption parameter.

公开(公告)号：US12087696B2

公开(公告)日：2024-09-10

申请号：US18095900

申请日：2023-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunkyoung Seo ,  Taehwan Kim ,  Hyunjung Song ,  Hyoeun Kim ,  Wonil Lee ,  Sanguk Han

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/367 ,  H01L23/538

CPC classification number: H01L23/5384 ,  H01L23/367 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/14

Abstract: A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.

公开(公告)号：US11574873B2

公开(公告)日：2023-02-07

申请号：US17003639

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunkyoung Seo ,  Taehwan Kim ,  Hyunjung Song ,  Hyoeun Kim ,  Wonil Lee ,  Sanguk Han

IPC: H01L23/367 ,  H01L23/538 ,  H01L23/00

Abstract: A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.

公开(公告)号：US11758454B2

公开(公告)日：2023-09-12

申请号：US17751163

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyeob Oak ,  Jisoo Song ,  Wonil Lee

IPC: H04W36/08 ,  H04W36/00 ,  H04W84/04 ,  H04W74/08 ,  H04W4/70 ,  H04W88/08

CPC classification number: H04W36/08 ,  H04W36/0055 ,  H04W4/70 ,  H04W74/0833 ,  H04W84/042 ,  H04W88/085

Abstract: A method and apparatus are provided that controls the handover between DUs in an eNB including a CU and a DU. The method and system fuses 5G communication systems with IoT technology to transmission data at a high rate after 4G systems. The communication method and system is applied to intelligent services, based on 5G communication technology and IoT related technology. The method includes transmitting, to a source DU of the base station, a first message related to a handover; receiving, from the source DU, a second message for downlink data delivery information related to a PDU transmitted from the source DU to a terminal; receiving, from a target DU of the base station, a third message based on a random access procedure of the terminal toward the target DU; and transmitting, to the target DU, downlink data based on the downlink data delivery information after receiving the third message.

公开(公告)号：US11297528B2

公开(公告)日：2022-04-05

申请号：US16620751

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Park ,  Wonil Lee

IPC: H04W28/02

Abstract: The present disclosure relates to a 5G (5th generation) or pre-5G communication system for supporting a higher data transmission rate than a 4G (4th generation) communication system such as Long Term Evolution (LTE). In accordance with various embodiments of the present disclosure, a device in a Central Unit (CU) connected to a Distributed Unit (DU) and a fronthaul in a wireless communication system may comprise: a communication interface for performing signaling between the CU and the DU; and at least one processor for determining whether to control a congestion state of the DU on the basis of the signaling, and when controlling the congestion state of the DU, stopping transmission of at least one packet to the DU before processing a Packet Data Convergence Protocol (PDCP).

公开(公告)号：US12080691B2

公开(公告)日：2024-09-03

申请号：US17585122

申请日：2022-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwoo Park ,  Heonwoo Kim ,  Sangcheon Park ,  Wonil Lee

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L25/105 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2924/37001

Abstract: A semiconductor device including an interposer including a central region and an edge region entirely surrounding the central region, wherein the interposer includes a wiring structure disposed in the first region and a metal structure disposed continuously within the entirety of the second region, a first semiconductor chip mounted in the central region and connected to the wiring structure, and a second semiconductor chip mounted in the central region adjacent to the first semiconductor chip and connected to the second wiring structure.

公开(公告)号：US11984415B2

公开(公告)日：2024-05-14

申请号：US17528954

申请日：2021-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Wonil Lee

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/544 ,  H01L25/10 ,  H01L25/18 ,  H01L23/48

CPC classification number: H01L24/02 ,  H01L21/486 ,  H01L23/49838 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L25/18 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/04 ,  H01L2223/54426 ,  H01L2224/0213 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/03019 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05019 ,  H01L2224/05025 ,  H01L2224/05082 ,  H01L2224/0603 ,  H01L2224/06182

Abstract: An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

公开(公告)号：US20240096831A1

公开(公告)日：2024-03-21

申请号：US18455943

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Enbin Jo ,  Hyungchul Shin ,  Wonil Lee ,  Hyuekjae Lee ,  Gwangjae Jeon

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/08 ,  H01L25/0657 ,  H01L24/16 ,  H01L2224/0801 ,  H01L2224/08058 ,  H01L2224/08146 ,  H01L2224/16227 ,  H01L2225/06541 ,  H01L2924/37

Abstract: A semiconductor package includes: a first semiconductor chip including a first pad on a first substrate, and a first insulating layer at least partially surrounding the first pad; and a second semiconductor chip including a second pad below a second substrate and contacting the first pad, and a second insulating layer at least partially surrounding the second pad and contacting the first insulating layer. The first pad includes a first surface contacting the second pad and a second surface opposite the first surface, and an inclined side surface between the first surface and the second surface. The inclined side surface includes a first side surface and a second side surface, facing each other and inclined at a first obtuse angle and a second obtuse angle with respect to the second surface, respectively. Each of the first and second obtuse angles is about 100° to about 130°.