Semiconductor package
    1.
    发明授权

    公开(公告)号:US12087696B2

    公开(公告)日:2024-09-10

    申请号:US18095900

    申请日:2023-01-11

    摘要: A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.

    Semiconductor package
    2.
    发明授权

    公开(公告)号:US11923342B2

    公开(公告)日:2024-03-05

    申请号:US17705872

    申请日:2022-03-28

    摘要: A package-on-package type package includes a lower semiconductor package and an upper semiconductor package. The lower semiconductor package includes a first semiconductor device including a through electrode, a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode, a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, a second molding member covering a sidewall of the first molding member, and an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode.

    Semiconductor package
    3.
    发明授权

    公开(公告)号:US11574873B2

    公开(公告)日:2023-02-07

    申请号:US17003639

    申请日:2020-08-26

    摘要: A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.

    Image sensor package with underfill and image sensor module including the same

    公开(公告)号:US11545512B2

    公开(公告)日:2023-01-03

    申请号:US17154890

    申请日:2021-01-21

    IPC分类号: H01L27/146 H04N5/225

    摘要: An image sensor package comprises: an image sensor chip configured to convert light collected from an outside thereof into an electrical signal; a package substrate disposed under the image sensor chip the package substrate configured to process the electrical signal converted from the image sensor chip; a glass substrate disposed over the image sensor chip while being spaced apart from the image sensor chip; a seal pattern disposed between an upper surface of the package substrate and a lower surface of the glass substrate while surrounding the image sensor chip; and a protection pattern disposed on the package substrate outside the seal pattern, the protection pattern comprising a single-component material, wherein the seal pattern comprises a material different from the material of the protection pattern.

    Semiconductor package including a redistribution line

    公开(公告)号:US10651224B2

    公开(公告)日:2020-05-12

    申请号:US16058451

    申请日:2018-08-08

    摘要: A semiconductor package includes a first semiconductor chip. A second semiconductor chip is below the first semiconductor chip. A third semiconductor chip is below the second semiconductor chip. The second semiconductor chip includes a first surface in direct contact with the first semiconductor chip, and a second surface facing the third semiconductor chip. A first redistribution pattern is on the second surface of the second semiconductor chip and is electrically connected to the third semiconductor chip. The third semiconductor chip includes a third surface facing the second semiconductor chip. A conductive pad is on the third surface.

    Semiconductor package
    6.
    发明授权

    公开(公告)号:US11626385B2

    公开(公告)日:2023-04-11

    申请号:US17178327

    申请日:2021-02-18

    IPC分类号: H01L25/065 H01L23/00

    摘要: A semiconductor package includes a first semiconductor chip comprising a semiconductor substrate and a redistribution pattern on a top surface of the semiconductor substrate, the redistribution pattern having a hole exposing an inner sidewall of the redistribution pattern, a second semiconductor chip on a top surface of the first semiconductor chip, and a bump structure disposed between the first semiconductor chip and the second semiconductor chip. The bump structure is disposed in the hole and is in contact with the inner sidewall of the redistribution pattern.

    Semiconductor package
    7.
    发明授权

    公开(公告)号:US11444060B2

    公开(公告)日:2022-09-13

    申请号:US16742341

    申请日:2020-01-14

    摘要: A package-on-package type package includes a lower semiconductor package and an upper semiconductor package. The lower semiconductor package includes a first semiconductor device including a through electrode, a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode, a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, a second molding member covering a sidewall of the first molding member, and an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode.