Interposer with through electrode having a wiring protection layer

    公开(公告)号:US11195785B2

    公开(公告)日:2021-12-07

    申请号:US16891443

    申请日:2020-06-03

    Abstract: An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

    INTERPOSER AND SEMICONDUCTOR PACKAGE HAVING THE SAME

    公开(公告)号:US20210167001A1

    公开(公告)日:2021-06-03

    申请号:US16891443

    申请日:2020-06-03

    Abstract: An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

    Interposer and semiconductor package including same

    公开(公告)号:US11728255B2

    公开(公告)日:2023-08-15

    申请号:US17154067

    申请日:2021-01-21

    Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

    INTERPOSER AND SEMICONDUCTOR PACKAGE INCLUDING SAME

    公开(公告)号:US20230352386A1

    公开(公告)日:2023-11-02

    申请号:US18347519

    申请日:2023-07-05

    Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

    INTERPOSER, METHOD FOR FABRICATING THE SAME, AND SEMICONDUCTOR PACKAGE HAVING THE SAME

    公开(公告)号:US20220302053A1

    公开(公告)日:2022-09-22

    申请号:US17528954

    申请日:2021-11-17

    Abstract: An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

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