公开(公告)号：US20210280682A1

公开(公告)日：2021-09-09

申请号：US17329240

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Myung-Yoon UM ,  Young-Joon PARK ,  Jeong-Hyo LEE ,  Ji-Yong HA ,  Jun-sun HWANG

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/088

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US20160380075A1

公开(公告)日：2016-12-29

申请号：US15170230

申请日：2016-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup CHUNG ,  Hyun-Jo KIM ,  Seong-Yul PARK ,  Se-Wan PARK ,  Jong-Mil YOUN ,  Jeong-Hyo LEE ,  Hwa-Sung RHEE ,  Hee-Don JEONG ,  Ji-Yong HA

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L27/092 ,  H01L29/161

CPC classification number: H01L29/66545 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7854 ,  H01L29/7855

Abstract: A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

Abstract translation: 半导体器件包括鳍状图案，其包括彼此相对的第一短边和第二短边，与第一短边接触的第一沟槽，与第二短边接触的第二沟槽，第一场绝缘 所述第一场绝缘膜包括从所述第一短边顺序布置的第一部分和第二部分，并且所述第一部分的高度不同于所述第二部分的高度;第二场绝缘膜， 第二沟槽和第一场绝缘膜的第一部分上的第一伪栅极。

公开(公告)号：US20190123159A1

公开(公告)日：2019-04-25

申请号：US16220028

申请日：2018-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Myung-Yoon UM ,  Young-Joon PARK ,  Jeong-Hyo LEE ,  Ji-Yong HA ,  Jun-sun HWANG

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US20170062420A1

公开(公告)日：2017-03-02

申请号：US15222300

申请日：2016-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Dae-Lim KANG ,  Myung-Yoon UM ,  Jeong-Hyo LEE ,  Jae-Yup CHUNG ,  Jun-Sun HWANG ,  Bo-Cheol JEONG

IPC: H01L27/088 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L27/0886 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/408 ,  H01L29/42376 ,  H01L29/4238

Abstract: A semiconductor device including a first fin pattern and a second fin pattern which have respective short sides facing each other and are separated from each other, a first field insulating layer which is around the first fin pattern and the second fin pattern, a second field insulating layer and a third field insulating layer which are between the first fin pattern and the second fin pattern, a first gate which is formed on the first fin pattern to intersect the first fin pattern, a second gate which is formed on the second field insulating layer, and a third gate which is formed on the third field insulating layer, wherein upper surfaces of the second and third field insulating layers protrude further upward than an upper surface of the first field insulating layer, and a distance between the first gate and the second gate is equal to a distance between the second gate and the third gate.

Abstract translation: 一种半导体器件，包括：第一鳍状图案和第二鳍状图案，其具有彼此相对的彼此分离的短边;第一场绝缘层，其围绕第一鳍状图案和第二鳍状图案;第二场隔绝 层和第三场绝缘层，位于第一鳍状图案和第二鳍状图案之间，形成在第一鳍状图案上以与第一鳍状图案相交的第一栅极，形成在第二场绝缘层上的第二栅极 以及形成在第三场绝缘层上的第三栅极，其中第二和第三场绝缘层的上表面比第一场绝缘层的上表面进一步向上突出，并且第一栅极和第二栅极之间的距离 栅极等于第二栅极和第三栅极之间的距离。