公开(公告)号：US20170194324A1

公开(公告)日：2017-07-06

申请号：US15461934

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan PARK ,  Baik-Min SUNG ,  Bo-Cheol JEONG

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20170062420A1

公开(公告)日：2017-03-02

申请号：US15222300

申请日：2016-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Dae-Lim KANG ,  Myung-Yoon UM ,  Jeong-Hyo LEE ,  Jae-Yup CHUNG ,  Jun-Sun HWANG ,  Bo-Cheol JEONG

IPC: H01L27/088 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L27/0886 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/408 ,  H01L29/42376 ,  H01L29/4238

Abstract: A semiconductor device including a first fin pattern and a second fin pattern which have respective short sides facing each other and are separated from each other, a first field insulating layer which is around the first fin pattern and the second fin pattern, a second field insulating layer and a third field insulating layer which are between the first fin pattern and the second fin pattern, a first gate which is formed on the first fin pattern to intersect the first fin pattern, a second gate which is formed on the second field insulating layer, and a third gate which is formed on the third field insulating layer, wherein upper surfaces of the second and third field insulating layers protrude further upward than an upper surface of the first field insulating layer, and a distance between the first gate and the second gate is equal to a distance between the second gate and the third gate.

Abstract translation: 一种半导体器件，包括：第一鳍状图案和第二鳍状图案，其具有彼此相对的彼此分离的短边;第一场绝缘层，其围绕第一鳍状图案和第二鳍状图案;第二场隔绝 层和第三场绝缘层，位于第一鳍状图案和第二鳍状图案之间，形成在第一鳍状图案上以与第一鳍状图案相交的第一栅极，形成在第二场绝缘层上的第二栅极 以及形成在第三场绝缘层上的第三栅极，其中第二和第三场绝缘层的上表面比第一场绝缘层的上表面进一步向上突出，并且第一栅极和第二栅极之间的距离 栅极等于第二栅极和第三栅极之间的距离。