公开(公告)号：US20210280682A1

公开(公告)日：2021-09-09

申请号：US17329240

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Myung-Yoon UM ,  Young-Joon PARK ,  Jeong-Hyo LEE ,  Ji-Yong HA ,  Jun-sun HWANG

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/088

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US20190123159A1

公开(公告)日：2019-04-25

申请号：US16220028

申请日：2018-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Myung-Yoon UM ,  Young-Joon PARK ,  Jeong-Hyo LEE ,  Ji-Yong HA ,  Jun-sun HWANG

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.