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公开(公告)号：US20220005647A1
公开(公告)日：2022-01-06
申请号：US17153371
申请日：2021-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung JO , Hyeon Cheol PARK , Daejin YANG , Doh Won JUNG , Taewon JEONG
IPC: H01G4/08
Abstract: A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.
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2.发明申请公开(公告)号：US20200234888A1
公开(公告)日：2020-07-23
申请号：US16837019
申请日：2020-04-01
Inventor： Yoon Chul SON , Minoru OSADA , Takayoshi SASAKI , Chan KWAK , Doh Won JUNG , Youngjin CHO
Abstract: A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.
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3.发明申请公开(公告)号：US20190131075A1
公开(公告)日：2019-05-02
申请号：US16169800
申请日：2018-10-24
Inventor： Hyeon Cheol PARK , Takayoshi SASAKI , Minoru OSADA , Chan KWAK , Daejin YANG , Doh Won JUNG , Youngjin CHO
Abstract: A ceramic electronic component includes a pair of electrodes facing each other and a dielectric layer disposed between the pair of electrodes and including a plurality of ceramic nanosheets, where the plurality of ceramic nanosheets has a multimodal lateral size distribution expressed by at least two separated peaks, a method of manufacturing the same, and an electronic device including the ceramic electronic component.
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公开(公告)号：US20160163410A1
公开(公告)日：2016-06-09
申请号：US14870265
申请日：2015-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Hee Jung PARK , Yoon Chul SON , Yun Sung WOO , Jongmin LEE , Yong Hee CHO , Kyoung-Seok MOON , Jae-Young CHOI , Kimoon LEE
IPC: H01B1/02
CPC classification number: H01L21/02186 , B32B5/16 , B32B15/04 , B32B2307/202 , B32B2307/704 , H01B1/02 , H01L21/02172 , H01L21/02197 , H01L27/016
Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (AαTi1−α)O2+δ Chemical Formula 1 wherein, in Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.
Abstract translation: 一种导电薄膜，包括多个纳米片，包括由化学式1表示的具有层状晶体结构的掺杂氧化钛的纳米片：（AαTi1-α）O 2 +δ化学式1其中，在化学式1中，δ大于0 A是选自Nb，Ta，V，W，Cr和Mo中的至少一种掺杂剂金属，α大于0且小于1.另外，包括导电薄膜的电子器件。
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5.发明公开公开(公告)号：US20230162917A1
公开(公告)日：2023-05-25
申请号：US17750742
申请日：2022-05-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taewon JEONG , Hyeon Cheol PARK , Daejin YANG , Doh Won JUNG , Giyoung JO
CPC classification number: H01G4/10 , H01G4/30 , H01G4/008 , C01G33/006 , C01P2002/50 , C01P2006/40 , C01P2002/72
Abstract: A dielectric material, a device including the same, and a method of preparing the dielectric material are provided. The dielectric material may include a compound represented by the following Formula 1:
K1+xNaSr4-2xLaxNb10O30, Formula 1
wherein, in Formula 1, 0-
Patent Agency Ranking
公开(公告)号：US20220415577A1
公开(公告)日：2022-12-29
申请号：US17521296
申请日：2021-11-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taewon JEONG , Hyeon Cheol PARK , Daejin YANG , Doh Won JUNG , Giyoung JO
Abstract: Provided are a dielectric material and a device including the dielectric material. The dielectric material includes (K0.5Na0.5)NbO3 and (K0.5A0.5)TiO3, wherein A is a trivalent element having 3 valence electrons, in a solid solution; and the device includes a plurality of electrodes; and at least one dielectric layer between the plurality of electrodes, wherein the dielectric layers include the dielectric material.
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7.发明申请公开(公告)号：US20180261388A1
公开(公告)日：2018-09-13
申请号：US15848562
申请日：2017-12-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Daejin YANG , Jong Wook ROH , Doh Won JUNG , Chan KWAK , Hyungjun KIM , Woojin LEE
CPC classification number: H01G4/10 , B32B15/043 , B32B2307/204 , B82B1/005 , H01G4/1227
Abstract: A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1 X2[A(n−1)MnO(3n+1)] Chemical Formula 1 wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n≥1.
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8.发明申请公开(公告)号：US20180204679A1
公开(公告)日：2018-07-19
申请号：US15875386
申请日：2018-01-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan KWAK , Hyun Sik KIM , Jong Wook ROH , Kyoung-Seok MOON , Hyeon Cheol PARK , Yoon Chul SON , Daejin YANG , Doh Won JUNG , Youngjin CHO
CPC classification number: H01G4/30 , C04B35/47 , C04B35/62805 , C04B35/62815 , C04B2235/3201 , C04B2235/3208 , C04B2235/3251 , C04B2235/3255 , C04B2235/6582 , C04B2235/6588 , C04B2235/781 , C04B2235/79 , C04B2235/85 , C04B2237/346 , C04B2237/68 , H01C7/008 , H01C7/1006 , H01C7/18 , H01C17/06533 , H01G4/1218 , H01G4/1227 , H01G4/1236 , H01G4/1245 , H01G4/14 , H01G4/232 , H01G4/248
Abstract: A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.
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公开(公告)号：US20150380122A1
公开(公告)日：2015-12-31
申请号：US14740583
申请日：2015-06-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungwoo HWANG , Kimoon LEE , Doh Won JUNG , Sang Il KIM , Kyoung-Seok MOON , Woojin LEE
CPC classification number: H01B1/02 , C01B19/002 , C01B19/02 , C01P2002/72 , C01P2004/24 , C01P2006/40 , C01P2006/60 , C04B35/547 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/42 , C04B2235/428 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/662 , C04B2235/76
Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure: AxMyChz Chemical Formula 1 wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.
Abstract translation: 一种导电薄膜，包括由化学式1表示的具有层状结晶结构的化合物：AxMyChz化学式1其中A为V，Nb或Ta，M为Ni，Co，Fe，Pd，Pt，Ir，Rh， Si或Ge，Ch是S，Se或Te，x是1至3的数，y是1至3的数，z是2至14的数。
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公开(公告)号：US20150340123A1
公开(公告)日：2015-11-26
申请号：US14539408
申请日：2014-11-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Hee Jung PARK , Kimoon LEE , Yoon Chul SON , Woojin LEE , Youngjin CHO
CPC classification number: H01B1/02 , C01B35/04 , C01P2006/40 , C01P2006/60 , G06F3/041 , G06F2203/04103 , H01B1/06 , H01L31/022466 , Y10T428/256
Abstract: A transparent conductor including a Group 5 transition metal and boron, wherein the compound has a layered structure.
Abstract translation: 包括第5族过渡金属和硼的透明导体，其中该化合物具有层状结构。
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