公开(公告)号：US20220005647A1

公开(公告)日：2022-01-06

申请号：US17153371

申请日：2021-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG

IPC: H01G4/08

Abstract: A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

公开(公告)号：US20250054866A1

公开(公告)日：2025-02-13

申请号：US18796804

申请日：2024-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Wook SHIN ,  Sangwon KIM ,  Chang Seok LEE ,  Joonseok KIM ,  Joonyun KIM ,  Giyoung JO ,  Luhing HU

IPC: H01L23/532 ,  H01L23/528

Abstract: Disclosed are an interconnect structure including a substrate, a metal layer on the substrate, and a passivation layer including a topological compound and in contact with the metal layer.

公开(公告)号：US20230154679A1

公开(公告)日：2023-05-18

申请号：US17858552

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  C01G33/00

CPC classification number: H01G4/10 ,  C01G33/006 ,  H01G4/30 ,  C01P2002/34 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2006/32 ,  C01P2006/40

Abstract: Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about -15% to about 15% in a range of about -55° C. to about +200° C.

公开(公告)号：US20220246353A1

公开(公告)日：2022-08-04

申请号：US17368037

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG ,  Giyoung JO

IPC: H01G4/12 ,  H01G4/30 ,  H01B19/00 ,  H01B3/12

Abstract: Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material: xAB3.(1−x)(BiaNab)TiO3   [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1

公开(公告)号：US20210118980A1

公开(公告)日：2021-04-22

申请号：US16853195

申请日：2020-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeoncheol PARK ,  Chan KWAK ,  Euncheol DO ,  Giyoung JO

IPC: H01L49/02 ,  H01G4/12 ,  H01G4/30 ,  H01G4/012 ,  H01L27/108 ,  C01G35/00

Abstract: Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric. (RbxA1-x)(ByTa1-y)O3-δ   In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

公开(公告)号：US20200172445A1

公开(公告)日：2020-06-04

申请号：US16391767

申请日：2019-04-23

Applicant: Samsung Electronics Co. Ltd.

Inventor： Giyoung JO ,  Chan KWAK ,  Taewon JEONG

IPC: C04B35/64 ,  C04B41/87 ,  C04B35/48

Abstract: A sintering jig according to the disclosure includes a first plate including a plurality of protrusions and a second plate stacked on the first plate and including through holes corresponding to the protrusions. The through hole includes a cylindrical portion through which the protrusion enter and exit and a conical portion widening towards an upper surface of the second plate from the cylindrical portion.

公开(公告)号：US20230162917A1

公开(公告)日：2023-05-25

申请号：US17750742

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/00

CPC classification number: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/006 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2002/72

Abstract: A dielectric material, a device including the same, and a method of preparing the dielectric material are provided. The dielectric material may include a compound represented by the following Formula 1:


K1+xNaSr4-2xLaxNb10O30,  Formula 1

wherein, in Formula 1, 0

公开(公告)号：US20220415577A1

公开(公告)日：2022-12-29

申请号：US17521296

申请日：2021-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  H01L49/02

Abstract: Provided are a dielectric material and a device including the dielectric material. The dielectric material includes (K0.5Na0.5)NbO3 and (K0.5A0.5)TiO3, wherein A is a trivalent element having 3 valence electrons, in a solid solution; and the device includes a plurality of electrodes; and at least one dielectric layer between the plurality of electrodes, wherein the dielectric layers include the dielectric material.

公开(公告)号：US20220123102A1

公开(公告)日：2022-04-21

申请号：US17344672

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Hyeoncheol PARK ,  Daejin YANG ,  Dohwon JUNG ,  Taewon JEONG

IPC: H01L49/02 ,  H01L27/108 ,  H01B3/12 ,  H01G4/12

Abstract: The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: (100-x-y)BaTiO3.xBiREO3.yABO3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0

公开(公告)号：US20210122644A1

公开(公告)日：2021-04-29

申请号：US16819571

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Chan KWAK ,  Hyungjun KIM ,  Euncheol DO ,  Hyeoncheol PARK ,  Changsoo LEE

IPC: C01G33/00 ,  H01L27/108 ,  H01L49/02

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.