公开(公告)号：US20220005647A1

公开(公告)日：2022-01-06

申请号：US17153371

申请日：2021-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG

IPC: H01G4/08

Abstract: A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

公开(公告)号：US20230154679A1

公开(公告)日：2023-05-18

申请号：US17858552

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  C01G33/00

CPC classification number: H01G4/10 ,  C01G33/006 ,  H01G4/30 ,  C01P2002/34 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2006/32 ,  C01P2006/40

Abstract: Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about -15% to about 15% in a range of about -55° C. to about +200° C.

公开(公告)号：US20160290936A1

公开(公告)日：2016-10-06

申请号：US15034337

申请日：2014-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taewon JEONG ,  Doyoon KIM ,  Ilhwan KIM ,  Shanghyeun PARK ,  Changsoo LEE ,  Yongchul KIM

IPC: G01N23/04 ,  H01J35/18 ,  H01J35/06 ,  H01J35/08

Abstract: An X-ray generation apparatus includes: an electron emission device comprising a plurality of electron emission units that emit electrons; a transmission type X-ray emission unit for emitting an X-ray by electrons emitted by the plurality of electron emission units; and a vacuum chamber for shielding the electron emission device and the transmission type X-ray emission unit by using vacuum. An X-ray imaging system includes an X-ray detection apparatus for detecting an X-ray that is irradiated from the X-ray generation apparatus and passes through an object.

Abstract translation: X射线产生装置包括：电子发射装置，包括发射电子的多个电子发射单元; 透射型X射线发射单元，用于通过由多个电子发射单元发射的电子发射X射线; 以及用于通过使用真空屏蔽电子发射器件和透射型X射线发射单元的真空室。 X射线成像系统包括用于检测从X射线产生装置照射并穿过物体的X射线的X射线检测装置。

公开(公告)号：US20220028613A1

公开(公告)日：2022-01-27

申请号：US17165300

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  G11C11/22 ,  H01L27/11502 ,  H01L49/02 ,  C04B35/497

Abstract: Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material: (1−x)KaNabNbO3.xM(AcSbd)O3  [Formula 1] wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0

公开(公告)号：US20200165142A1

公开(公告)日：2020-05-28

申请号：US16409096

申请日：2019-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doh Won JUNG ,  Chan KWAK ,  Euncheol DO ,  Hyeon Cheol PARK ,  Daejin YANG ,  Taewon JEONG ,  Giyoung JO

IPC: C01G35/00 ,  H01G4/10 ,  H01L49/02

Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.

公开(公告)号：US20230162917A1

公开(公告)日：2023-05-25

申请号：US17750742

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/00

CPC classification number: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/006 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2002/72

Abstract: A dielectric material, a device including the same, and a method of preparing the dielectric material are provided. The dielectric material may include a compound represented by the following Formula 1:


K1+xNaSr4-2xLaxNb10O30,  Formula 1

wherein, in Formula 1, 0

公开(公告)号：US20220415577A1

公开(公告)日：2022-12-29

申请号：US17521296

申请日：2021-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  H01L49/02

Abstract: Provided are a dielectric material and a device including the dielectric material. The dielectric material includes (K0.5Na0.5)NbO3 and (K0.5A0.5)TiO3, wherein A is a trivalent element having 3 valence electrons, in a solid solution; and the device includes a plurality of electrodes; and at least one dielectric layer between the plurality of electrodes, wherein the dielectric layers include the dielectric material.

公开(公告)号：US20220123102A1

公开(公告)日：2022-04-21

申请号：US17344672

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Hyeoncheol PARK ,  Daejin YANG ,  Dohwon JUNG ,  Taewon JEONG

IPC: H01L49/02 ,  H01L27/108 ,  H01B3/12 ,  H01G4/12

Abstract: The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: (100-x-y)BaTiO3.xBiREO3.yABO3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0

公开(公告)号：US20160026060A1

公开(公告)日：2016-01-28

申请号：US14633781

申请日：2015-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bonwon KOO ,  Deukseok CHUNG ,  Hyunjoon KIM ,  Shanghyeun PARK ,  Changsoo LEE ,  Taewon JEONG

IPC: G02F1/163 ,  G09G3/38 ,  G06F3/041 ,  G02F1/1333

CPC classification number: G02F1/163 ,  G02F1/13318 ,  G02F1/13338 ,  G02F2001/1635 ,  G06F3/0412 ,  G09G3/38 ,  G09G2310/08 ,  G09G2354/00

Abstract: An electro-chromic panel includes a detection layer, and an electro-chromic layer configured to switch an operational mode of a selected area according to a signal provided from the detection layer. A method of operating an electro-chromic panel includes detecting a first signal provided to a detection layer, and switching an operational mode of a first area of an electro-chromic layer according to the first signal provided from the detection layer.

Abstract translation: 电铬面板包括检测层和电色层，其被配置为根据从检测层提供的信号切换所选区域的操作模式。 操作电铬面板的方法包括检测提供给检测层的第一信号，以及根据从检测层提供的第一信号切换电致密层的第一区域的操作模式。

公开(公告)号：US20220246353A1

公开(公告)日：2022-08-04

申请号：US17368037

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG ,  Giyoung JO

IPC: H01G4/12 ,  H01G4/30 ,  H01B19/00 ,  H01B3/12

Abstract: Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material: xAB3.(1−x)(BiaNab)TiO3   [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1