-
公开(公告)号：US20240429618A1
公开(公告)日：2024-12-26
申请号：US18819279
申请日：2024-08-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bumhee LEE , Seungtae KO , Junsig KUM , Yoongeon KIM , Seokmin LEE , Youngju LEE , Jongmin LEE , Seungho CHOI
Abstract: The disclosure relates to a fifth generation (5G) or pre-5G communication system supporting higher data rates after a fourth generation (4G) communication system such as Long Term Evolution (LTE). A module in a wireless communication system is provided. The module includes a plurality of antenna elements, an antenna substrate coupled to the plurality of antenna elements, a metal plate coupled to the antenna substrate, a calibration substrate coupled to a Radio Frequency (RF) component on a first face, and a conductive adhesive material for electrical coupling between the metal plate and the calibration substrate. The conductive adhesive material may be coupled to the calibration substrate on a second face different from the first face of the calibration substrate. The conductive adhesive material may include an air gap formed along a signal line included in the calibration substrate.
-
2.发明公开公开(公告)号：US20240271805A1
公开(公告)日：2024-08-15
申请号：US18232452
申请日：2023-08-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeonsu HEO , Jongmin LEE , Wooyul KIM , Hyun Chul LEE , Cheolwoo PARK , Gahye SHIN
CPC classification number: F24F8/167 , B01D39/2068 , B01J21/063 , B01J23/42 , B01J29/40 , B01J35/19 , B01J35/39 , B01J35/40 , F24F8/108 , B01D2239/0478 , B01D2257/702
Abstract: A composite catalyst filter includes a porous filter substrate, and particles of at least one type of catalyst on a surface of the porous filter substrate. The particles of the catalyst include particles of a photocatalyst, and particles of at least one type of adsorbent and oxidation catalyst.
-
公开(公告)号：US20240071923A1
公开(公告)日：2024-02-29
申请号：US18209820
申请日：2023-06-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minjun SONG , Jongmin LEE , Joongwon SHIN , Nara LEE , Jimin CHOI
IPC: H01L23/528 , H01L23/00 , H01L23/522 , H01L23/532 , H01L25/065 , H10B80/00
CPC classification number: H01L23/5283 , H01L23/5226 , H01L23/53223 , H01L23/53266 , H01L23/53295 , H01L24/16 , H01L25/0657 , H10B80/00 , H01L23/53228 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2924/1431 , H01L2924/1436
Abstract: A semiconductor device may include lower metal wirings on a substrate, a first upper insulating interlayer on the lower metal wirings, a first upper wiring including a first upper via in the first upper insulating interlayer and a first upper metal pattern on the first upper insulating interlayer. The semiconductor device may also include a second upper insulating interlayer on the first upper insulating interlayer, an uppermost wiring including an uppermost via in the second upper insulating interlayer, an uppermost metal pattern on the second upper insulating interlayer, and an oxide layer for supplying hydrogen on the second upper insulating interlayer. The lower metal wirings may be stacked in a plurality of layers. The oxide layer for supplying hydrogen may cover the uppermost wiring. A thickness of the uppermost via may be less than 40% of a thickness of the uppermost metal pattern.
-
公开(公告)号：US20240185589A1
公开(公告)日：2024-06-06
申请号：US18329122
申请日：2023-06-05
Inventor： Jae Seok CHOI , Jongmin LEE , Minsu CHO , Sanghyun KIM , Dahyun KANG , Insoo KIM , Geonseok SEO , Min Jung LEE
IPC: G06V10/80 , G06T3/00 , G06V10/771 , G06V10/82
CPC classification number: G06V10/806 , G06T3/0093 , G06V10/771 , G06V10/82
Abstract: A method and apparatus for image restoration using burst images are provided, where the method includes receiving a burst image set including image frames, determining shifted data representing a shift level of each of the image frames using a shift estimation model, selecting a base image from the image frames based on the shifted data, and performing image restoration by synthesizing at least a portion of the image frames based on the base image.
-
公开(公告)号：US20230229073A1
公开(公告)日：2023-07-20
申请号：US18048205
申请日：2022-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Cheolhwan KIM , Jichang SIM , Jongmin LEE , Sangeun GO , Ohhun KWON , Hyuckjoon KWON
Abstract: In a method of correcting a design layout of a semiconductor device, misaligned values of a portion of points of a target pattern of each of a plurality of regions of interest in a semiconductor device fabricated based on an original layout are measured, misaligned values of unmeasured points of the target pattern are estimated by using an artificial neural network trained based on the measured misaligned values of the portion of points, and a target layout of the semiconductor device is generated by using the estimated misaligned values.
-
Patent Agency Ranking
公开(公告)号：US20230198138A1
公开(公告)日：2023-06-22
申请号：US18109476
申请日：2023-02-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jungi JEONG , Seungtae KO , Jongmin LEE , Yoongeon KIM , Bumhee LEE , Youngju LEE , Seungho CHOI
CPC classification number: H01Q1/42 , H01Q1/246 , H01Q9/0407 , H01Q21/06
Abstract: The disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). According to embodiments of the present disclosure, an electronic device may include: a printed circuit board (PCB); an antenna; a radome; and a coupling structure, the antenna may be disposed to be positioned at a first height from a first surface of the PCB, the coupling structure may be physically connected with the radome, and the coupling structure may be disposed to have a second height lower than or equal to the first height, with respect to the first surface of the PCB.
-
公开(公告)号：US20230112285A1
公开(公告)日：2023-04-13
申请号：US18075850
申请日：2022-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bumhee LEE , Seungtae KO , Junsig KUM , Yoongeon KIM , Seokmin LEE , Youngju LEE , Jongmin LEE , Seungho CHOI
Abstract: The disclosure relates to a fifth generation (5G) or pre-5G communication system supporting higher data rates after a fourth generation (4G) communication system such as Long Term Evolution (LTE). A module in a wireless communication system is provided. The module includes a plurality of antenna elements, an antenna substrate coupled to the plurality of antenna elements, a metal plate coupled to the antenna substrate, a calibration substrate coupled to a Radio Frequency (RF) component on a first face, and a conductive adhesive material for electrical coupling between the metal plate and the calibration substrate. The conductive adhesive material may be coupled to the calibration substrate on a second face different from the first face of the calibration substrate. The conductive adhesive material may include an air gap formed along a signal line included in the calibration substrate.
-
公开(公告)号：US20230078980A1
公开(公告)日：2023-03-16
申请号：US17696989
申请日：2022-03-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jimin CHOI , Jeonil LEE , Jongmin LEE , Juik LEE
IPC: H01L25/065 , H01L23/367 , H01L23/42 , H01L23/48
Abstract: A thermal pad of a semiconductor chip, a semiconductor chip including the thermal pad, and a method of manufacturing the semiconductor chip, the thermal pad including a thermal core in a trench at a lower surface of a semiconductor substrate, the thermal core being configured to receive heat generated from a through silicon via (TSV) vertically extending through the semiconductor substrate; a thermal head connected to the thermal core and protruding from the lower surface of the semiconductor substrate, the thermal head being configured to dissipate the heat in the thermal core; a first insulation layer between an inner surface of the trench and the thermal core; and a second insulation layer between the first insulation layer and the thermal core.
-
公开(公告)号：US20210399003A1
公开(公告)日：2021-12-23
申请号：US17149967
申请日：2021-01-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donghyun SHIN , Minkyu KANG , Seorim MOON , Seunggi MIN , Sungmin PARK , Jongmin LEE
IPC: H01L27/11573 , H01L23/535 , H01L27/11582 , H01L21/768
Abstract: A three-dimensional semiconductor memory device includes a peripheral circuit structure, a cell array structure above the peripheral circuit structure, and peripheral contact via structures connecting the cell array structure to the peripheral circuit structure, the peripheral contact via structures including a first peripheral contact via structure in a first through region in the peripheral circuit structure, and a second peripheral contact via structure in a second through region in the peripheral circuit structure, the second through region being spaced apart from the first through region above the peripheral circuit structure, and a difference between a second critical dimension of the second peripheral contact via structure and a first critical dimension of the first peripheral contact via structure being differently configured according to material layers included in the second through region and the first through region.
-
公开(公告)号：US20210284908A1
公开(公告)日：2021-09-16
申请号：US17199616
申请日：2021-03-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon KIM , Jongmin LEE , Jooyeon AHN , Hyeyeon YANG , Shin Ae JUN
Abstract: A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.
-
-
-
-
-
-
-
-
-
Search Results
49
records
(took 0.023 seconds)
