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公开(公告)号：US20170256741A1
公开(公告)日：2017-09-07
申请号：US15268473
申请日：2016-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yoon Chul SON , In Taek HAN , Doh Won JUNG
CPC classification number: H01L51/5256 , B32B37/14 , B32B2457/00
Abstract: A barrier film including: an organic material layer including a single sub-layer or a plurality of sub-layers; and a metal oxide nanosheet layer including a plurality of metal oxide nanosheets; wherein at least one sub-layer of the organic material layer has a positive charge; and an electronic device includes the barrier film.
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2.发明申请ELECTRICAL CONDUCTORS, PRODUCTION METHODS THEREOF, AND ELECTRONIC DEVICES INCLUDING THE SAME 有权电导体及其制造方法以及包括其的电子器件公开(公告)号：US20170064822A1
公开(公告)日：2017-03-02
申请号：US15235363
申请日：2016-08-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Yoon Chul SON , Woojin LEE , Jongmin LEE
CPC classification number: H05K1/09 , H05K1/028 , H05K1/0393 , H05K3/22 , H05K3/24 , H05K2201/0326 , H05K2201/0338 , H05K2203/0108 , H05K2203/0257 , H05K2203/1105
Abstract: An electrical conductor includes a first conductive layer including a plurality of metal oxide nanosheets, wherein a metal oxide nanosheet of the plurality of metal oxide nanosheets includes a proton bonded to a the surface of the metal oxide nanosheet, wherein the metal oxide is represented by Chemical Formula 1: MO2 Chemical Formula 1 wherein M is Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, or Mn, wherein the plurality of metal oxide nanosheets has a content of hydrogen atoms of less than about 100 atomic percent, with respect to 100 atomic percent of metal atoms as measured by Rutherford backscattering spectrometry, and wherein the plurality of metal oxide nanosheets includes an electrical connection between contacting metal oxide nanosheets.
Abstract translation: 其中M是Re，V，Os，Ru，Ta，Ir，Nb，W，Ga，Mo，In，Cr，Rh或Mn，其中多个金属氧化物纳米片的氢原子含量小于约100 原子百分比，相对于通过卢瑟福背散射光谱法测量的100原子％的金属原子，并且其中多个金属氧化物纳米片包括在接触金属氧化物纳米片之间的电连接。
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公开(公告)号：US20160002051A1
公开(公告)日：2016-01-07
申请号：US14750058
申请日：2015-06-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hee Jung PARK , Yoon Chul SON , Doh Won JUNG , Woojin LEE , Jae-Young CHOI
CPC classification number: C01B32/914 , C01B32/05 , C01B32/336 , H01B1/02 , Y10T428/25 , Y10T428/256
Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure Chemical Formula 1 Re2C wherein Re is a lanthanide. Also an electronic device including the electrically conductive thin film.
Abstract translation: 一种导电薄膜，其包含由化学式1表示的化合物并具有层状结晶结构的化学式1 Re2C，其中Re是镧系元素。 还有一种包括导电薄膜的电子器件。
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4.发明申请公开(公告)号：US20190304685A1
公开(公告)日：2019-10-03
申请号：US16033392
申请日：2018-07-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun Sik KIM , Yoon Chul SON , Kyoung-Seok MOON , Daejin YANG , Chan KWAK
Abstract: Disclosed are a dielectric material, a multi-layered capacitor, and an electronic device including the same. The dielectric material includes a dielectric material particle represented by ADO3, wherein A includes Sr, Ba, Ca, Pb, K, Na, or a combination thereof, D includes Ti, Zr, Mg, Nb, Ta, or a combination thereof, the dielectric material particle includes about 2.5 moles to about 4 moles of the donor element, based on 100 moles of D, and a diameter of the dielectric material particle is in a range of from about 100 nanometers to about 300 nanometers.
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公开(公告)号：US20150376020A1
公开(公告)日：2015-12-31
申请号：US14558931
申请日：2014-12-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Hee Jung PARK , Yoon Chul SON , Woojin LEE , Sang Il KIM , Jae-Young CHOI
IPC: C01B35/04
CPC classification number: C01B35/04 , C01P2004/24 , C01P2006/40 , C01P2006/60 , H01B1/06
Abstract: An electrically conductive thin film includes a compound represented by Chemical Formula 1 and having a layered crystal structure: MeB2 Chemical Formula 1 wherein, Me is Au, Al, Ag, Mg, Ta, Nb, Y, W, V, Mo, Sc, Cr, Mn, Os, Tc, Ru, Fe, Zr, or Ti.
Abstract translation: 导电薄膜包括由化学式1表示的具有层状晶体结构的化合物：MeB2化学式1其中Me是Au，Al，Ag，Mg，Ta，Nb，Y，W，V，Mo，Sc， Cr，Mn，Os，Tc，Ru，Fe，Zr或Ti。
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Patent Agency Ranking
公开(公告)号：US20150344306A1
公开(公告)日：2015-12-03
申请号：US14703237
申请日：2015-05-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Se Yun KIM , Sang Il KIM , Sung Woo HWANG , Yoon Chul SON , Yong-Hee CHO , Jae-Young CHOI
CPC classification number: C01B19/007 , C23C14/0623 , C23C14/28 , C30B29/46 , H01B1/00 , H01B1/06
Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure MeCha Chemical Formula 1 wherein, Me is Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu; Ch is sulfur, selenium, or tellurium; and a is an integer ranging from 1 to 3.
Abstract translation: 一种导电薄膜，其包含由化学式1表示的具有层状结晶结构MeCha化学式1的化合物，其中Me为Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho ，Er，Tm，Yb或Lu; Ch是硫，硒或碲; a为1〜3的整数。
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7.发明申请公开(公告)号：US20200234888A1
公开(公告)日：2020-07-23
申请号：US16837019
申请日：2020-04-01
Inventor： Yoon Chul SON , Minoru OSADA , Takayoshi SASAKI , Chan KWAK , Doh Won JUNG , Youngjin CHO
Abstract: A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.
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公开(公告)号：US20160163410A1
公开(公告)日：2016-06-09
申请号：US14870265
申请日：2015-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Hee Jung PARK , Yoon Chul SON , Yun Sung WOO , Jongmin LEE , Yong Hee CHO , Kyoung-Seok MOON , Jae-Young CHOI , Kimoon LEE
IPC: H01B1/02
CPC classification number: H01L21/02186 , B32B5/16 , B32B15/04 , B32B2307/202 , B32B2307/704 , H01B1/02 , H01L21/02172 , H01L21/02197 , H01L27/016
Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (AαTi1−α)O2+δ Chemical Formula 1 wherein, in Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.
Abstract translation: 一种导电薄膜，包括多个纳米片，包括由化学式1表示的具有层状晶体结构的掺杂氧化钛的纳米片：（AαTi1-α）O 2 +δ化学式1其中，在化学式1中，δ大于0 A是选自Nb，Ta，V，W，Cr和Mo中的至少一种掺杂剂金属，α大于0且小于1.另外，包括导电薄膜的电子器件。
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公开(公告)号：US20150360944A1
公开(公告)日：2015-12-17
申请号：US14732951
申请日：2015-06-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Il KIM , Se Yun KIM , Kyoung-Seok MOON , Sung Woo HWANG , Yoon Chul SON , Hyosug LEE
Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: M1Te2 Chemical Formula 1 wherein M1 is titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), tantalum (Ta), or niobium (Nb); and M2Se2 Chemical Formula 2 wherein M2 is vanadium (V) or tantalum (Ta).
Abstract translation: 一种导电薄膜，其包含化学式1或化学式2表示的化合物，并具有层状晶体结构：M1Te2化学式1其中M1为钛（Ti），锆（Zr），铪（Hf），钒（V） ，钽（Ta）或铌（Nb）; 和M2Se2化学式2，其中M2是钒（V）或钽（Ta）。
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公开(公告)号：US20150155065A1
公开(公告)日：2015-06-04
申请号：US14461639
申请日：2014-08-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol PARK , Kwang Hee KIM , Chan KWAK , Yoon Chul SON , Sang Mock LEE
CPC classification number: H01B1/02 , C23C14/0036 , C23C14/0641 , C23C14/3414 , C23C14/3464 , H01B1/06 , H01B1/16 , H01L31/1892 , H01L33/42 , H01L51/5234 , Y10T428/26
Abstract: A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.
Abstract translation: 公开了一种透明导电薄膜和包括该透明导电薄膜的电子器件，所述透明导电薄膜包括氮化钛或具有选自锌（Zn），镓（Ga），铟（In））的异金属元素的氮化锆和 其组合。
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