公开(公告)号：US20220140067A1

公开(公告)日：2022-05-05

申请号：US17334030

申请日：2021-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Younsoo KIM ,  Haeryong KIM ,  Boeun PARK ,  Eunha LEE ,  Jooho LEE ,  Hyangsook LEE ,  Yong-Hee CHO ,  Eunae CHO

IPC: H01L49/02 ,  H01L29/08

Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

公开(公告)号：US20230178584A1

公开(公告)日：2023-06-08

申请号：US17841035

申请日：2022-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Yong-Hee CHO ,  Yongsung KIM ,  Boeun PARK ,  Jeongil BANG ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108 ,  H01L31/0216 ,  C23C16/455 ,  C23C14/08 ,  C23C16/06 ,  C23C14/34 ,  C23C28/00

CPC classification number: H01L28/56 ,  H01L27/10808 ,  H01L31/02167 ,  C23C16/45527 ,  C23C14/088 ,  C23C16/06 ,  C23C14/3414 ,  C23C28/32 ,  C23C28/3455

Abstract: Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.

公开(公告)号：US20230080072A1

公开(公告)日：2023-03-16

申请号：US17715389

申请日：2022-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong KIM ,  Changsoo LEE ,  Yongsung KIM ,  Euncheol DO ,  Jooho LEE ,  Yong-Hee CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

公开(公告)号：US20220406884A1

公开(公告)日：2022-12-22

申请号：US17844896

申请日：2022-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Changsoo LEE ,  Yong-Hee CHO ,  Yongsung KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

公开(公告)号：US20160056328A1

公开(公告)日：2016-02-25

申请号：US14603103

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Hee CHO ,  Sungjin KIM ,  Munbo SHIM ,  Yukeun Eugene PAK

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/16 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/16 ,  H01L33/32

Abstract: Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0

Abstract translation: 示例性实施例涉及在邻C平面上包括四元量子阱的绿色发光器件。 发光装置包括具有邻C面的基板和位于基板的邻近c面的发光层。 发光层包括分别设置在量子阱层上和下方的Al x In y Ga 1-x-y N的量子阱层和In z Ga 1-z N的量子势垒层，0

公开(公告)号：US20240387611A1

公开(公告)日：2024-11-21

申请号：US18789832

申请日：2024-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong KIM ,  Changsoo LEE ,  Yongsung KIM ,  Euncheol DO ,  Jooho LEE ,  Yong-Hee CHO

IPC: H10B12/00

Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

公开(公告)号：US20240258366A1

公开(公告)日：2024-08-01

申请号：US18350397

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo LEE ,  Jinhong KIM ,  Cheheung KIM ,  Jooho LEE ,  Yong-Hee CHO

IPC: H10B12/00

CPC classification number: H01L28/90 ,  H10B12/315

Abstract: A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.

公开(公告)号：US20240243164A1

公开(公告)日：2024-07-18

申请号：US18409957

申请日：2024-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho LEE ,  Yong-Hee CHO ,  Jinhong KIM ,  Changsoo LEE ,  Sung HEO

IPC: H01G4/30 ,  H10B12/00

CPC classification number: H01L28/65 ,  H01L28/75 ,  H01L28/91 ,  H10B12/315

Abstract: Provided are a capacitor, a method of preparing the capacitor, and an electronic device including the capacitor, the capacitor including a lower electrode, an upper electrode spaced apart from the lower electrode, a dielectric between the lower electrode and the upper electrode, a first layer between the lower electrode and the dielectric, and a second layer between the dielectric and the upper electrode, wherein the dielectric comprises TiO2 having a rutile phase and is doped with magnesium, the first layer includes a material having a higher work function than that of a material included in the lower electrode, and the second layer includes a dielectric protective material.

公开(公告)号：US20230102906A1

公开(公告)日：2023-03-30

申请号：US17715473

申请日：2022-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo LEE ,  Jinhong KIM ,  Yongsung KIM ,  Jiwoon PARK ,  Jooho LEE ,  Yong-Hee CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnO2 doped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.

公开(公告)号：US20220173209A1

公开(公告)日：2022-06-02

申请号：US17465223

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Yong-Hee CHO ,  Seungwoo JANG ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L29/792

Abstract: A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.