公开(公告)号：US20230062878A1

公开(公告)日：2023-03-02

申请号：US17894504

申请日：2022-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Hyangsook LEE ,  Sanghyun JO ,  Seunggeol NAM ,  Taehwan MOON ,  Hagyoul BAE ,  Eunha LEE ,  Junho LEE

IPC: H01L29/78 ,  H01L29/51

Abstract: An electronic device includes: a substrate including a source, a drain, and a channel between the source and the drain; a gate electrode arranged above the substrate and facing the channel, the gate electrode being apart from the channel in a first direction; and a ferroelectric thin film structure between the channel and the gate electrode, the ferroelectric thin film structure including a first ferroelectric layer, a crystallization barrier layer including a dielectric material, and a second ferroelectric layer, which are sequentially arranged from the channel in the first direction. The average of sizes of crystal grains of the first ferroelectric layer may be less than or equal to the average of sizes of crystal grains of the second ferroelectric layer, and owing to small crystal grains, dispersion of performance may be improved.

公开(公告)号：US20210388488A1

公开(公告)日：2021-12-16

申请号：US17132111

申请日：2020-12-23

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hyangsook LEE ,  Hyoungsub KIM ,  Wonsik AHN ,  Eunha LEE

IPC: C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  C23C16/02

Abstract: Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.

公开(公告)号：US20230122101A1

公开(公告)日：2023-04-20

申请号：US17959793

申请日：2022-10-04

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Young-Min KIM ,  Eunha LEE ,  Myoungho JEONG ,  Young-Hoon KIM ,  Sang-Hyeok YANG

IPC: G01N23/20058 ,  G06T7/70 ,  G06V10/82 ,  G06V10/762 ,  G06V10/764

Abstract: A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

公开(公告)号：US20210118990A1

公开(公告)日：2021-04-22

申请号：US17072737

申请日：2020-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Eunha LEE ,  Jinseong HEO ,  Junghwa KIM ,  Hyangsook LEE ,  Seunggeol NAM

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L23/29

Abstract: An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

公开(公告)号：US20240194761A1

公开(公告)日：2024-06-13

申请号：US18531078

申请日：2023-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Hyangsook LEE ,  Eunha LEE ,  Jinseong HEO

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/78 ,  H10B51/20 ,  H10B53/30

CPC classification number: H01L29/516 ,  H01L29/4908 ,  H01L29/78391 ,  H10B51/20 ,  H10B53/30 ,  H01L29/775

Abstract: Provided as an electronic device and an electronic apparatus including the electronic device. The electronic device includes a conductive material layer, a mixed material layer covering the conductive material layer, and an electrode layer covering the mixed material layer. The mixed material layer includes an orthorhombic crystal phase and a tetragonal crystal phase mixed therein such that a ferroelectric material and an anti-ferroelectric material coexist therein.

公开(公告)号：US20230068904A1

公开(公告)日：2023-03-02

申请号：US17876979

申请日：2022-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Hyangsook LEE ,  Sanghyun JO ,  Seunggeol NAM ,  Taehwan MOON ,  Hagyoul BAE ,  Eunha LEE ,  Junho LEE

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/10

Abstract: An electronic device includes: a substrate including a source, a drain, and a channel between the source and the drain; a gate electrode arranged above the substrate and facing the channel, the gate electrode being apart from the channel in a first direction; and a ferroelectric thin film structure between the channel and the gate electrode, the ferroelectric thin film structure including a first ferroelectric layer, a crystallization barrier layer including a dielectric material, and a second ferroelectric layer, which are sequentially arranged from the channel in the first direction. The average of sizes of crystal grains of the first ferroelectric layer may be less than or equal to the average of sizes of crystal grains of the second ferroelectric layer, and owing to small crystal grains, dispersion of performance may be improved.

公开(公告)号：US20220254870A1

公开(公告)日：2022-08-11

申请号：US17344475

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyangsook LEE ,  Junghwa KIM ,  Eunha LEE ,  Jeonggyu SONG ,  Jooho LEE ,  Myoungho JEONG

IPC: H01L49/02 ,  H01L29/08

Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

公开(公告)号：US20220140147A1

公开(公告)日：2022-05-05

申请号：US17459529

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dukhyun CHOE ,  Hyangsook LEE ,  Junghwa KIM ,  Eunha LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.

公开(公告)号：US20210193811A1

公开(公告)日：2021-06-24

申请号：US16923514

申请日：2020-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan MOON ,  Eunha LEE ,  Junghwa KIM ,  Hyangsook LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L49/02 ,  H01L27/108

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

公开(公告)号：US20230282389A1

公开(公告)日：2023-09-07

申请号：US17897519

申请日：2022-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjun LEE ,  Gabjin NAM ,  Eunha LEE ,  Hyangsook LEE ,  Bongjin KUH ,  Junghwa KIM

IPC: H01B3/12 ,  H01B3/10 ,  H01L29/51 ,  H01L29/49 ,  H01L49/02

CPC classification number: H01B3/12 ,  H01B3/10 ,  H01L29/516 ,  H01L29/517 ,  H01L29/4908 ,  H01L28/40 ,  H01L29/785

Abstract: A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).