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1.发明申请公开(公告)号：US20140112836A1
公开(公告)日：2014-04-24
申请号：US14057225
申请日：2013-10-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang Hee KIM , Hyeon Cheol PARK , Jae-Ho LEE , Eun Seog CHO
CPC classification number: B01D71/022 , B01D53/228 , B01D2255/10 , B01D2257/108 , C01B3/503 , C01B2203/0405
Abstract: A separation membrane including: an alloy including a Group 5 element, Fe, and Al, wherein the alloy includes a body-centered cubic lattice structure.
Abstract translation: 一种分离膜，包括：包含第5族元素Fe和Al的合金，其中所述合金包括体心立方晶格结构。
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公开(公告)号：US20150187451A1
公开(公告)日：2015-07-02
申请号：US14488999
申请日：2014-09-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol PARK , Kwang Hee KIM , Chan KWAK , Yoon Chul SON , Sang Mock LEE
CPC classification number: C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/0641 , C23C14/086 , G06F3/041 , G06F2203/04103 , H01B1/00 , H01B1/08 , H01L31/022466 , Y10T428/265
Abstract: Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film.
Abstract translation: 公开了一种复合透明电极及其制造方法及包括该复合透明电极的电子器件，其中复合透明电极包括含有铟（In），钛（Ti），锌（Zn）等）中的至少一种的金属氮化物薄膜， ，锆（Zr）和镓（Ga）以及包含铟（In），锌（Zn），锡（Sn）和钛（Ti）中的至少一种的金属氧化物薄膜） 形成在金属氮化物薄膜的一个表面或相对表面上。
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3.发明申请公开(公告)号：US20130206002A1
公开(公告)日：2013-08-15
申请号：US13767971
申请日：2013-02-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeon Cheol PARK , Kwang Hee KIM , Byung Ki RYU , Jae Ho LEE
CPC classification number: B01D53/228 , B01D71/022 , B01D2256/16 , B01D2325/02 , B21H7/00 , C01B3/503 , C01B2203/0405
Abstract: A separation membrane including an alloy wherein the alloy includes at least one Group 5 element and at least one Group 14 element, wherein the at least one Group 5 element and the at least one Group 14 element of the alloy define a body centered cubic structure.
Abstract translation: 包括合金的分离膜，其中所述合金包括至少一种第5族元素和至少一种第14族元素，其中所述合金的至少一种第5族元素和至少一种第14族元素定义为体心立方结构。
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公开(公告)号：US20240164129A1
公开(公告)日：2024-05-16
申请号：US18508605
申请日：2023-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwang Hee KIM , Yuho WON , Jae Yong LEE , Oul CHO , Ha Il KWON , Ju Hyun KIM , Won Sik YOON , Taehyung KIM
IPC: H10K50/115 , C09K11/02 , C09K11/88
CPC classification number: H10K50/115 , C09K11/02 , C09K11/883 , H10K2101/30
Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a quantum dot layer disposed between the first electrode and the second electrode and including a plurality of quantum dots; optionally, an electron transport layer between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit first light. The electroluminescent device further includes a first layer including an inorganic nanoparticle between the quantum dot layer and the first electrode, and inorganic nanoparticle includes a metal chalcogenide including a Group II metal and a chalcogen element. The inorganic nanoparticle has a size of greater than or equal to about 0.5 nanometers and less than or equal to about 30 nanometers.
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5.发明申请公开(公告)号：US20130136666A1
公开(公告)日：2013-05-30
申请号：US13685132
申请日：2012-11-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol PARK , Kwang Hee KIM , Byung Ki RYU , Jae Ho LEE
CPC classification number: B01D71/022 , B01D53/228 , B01J8/02 , C01B3/503 , C01B3/505
Abstract: A separation membrane including an alloy including a Group 5 element and Ir, wherein the alloy includes a body centered cubic crystal structure.
Abstract translation: 一种分离膜，其包括含有第5族元素和Ir的合金，其中所述合金包括体心立方晶体结构。
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Patent Agency Ranking
公开(公告)号：US20240224564A1
公开(公告)日：2024-07-04
申请号：US18512352
申请日：2023-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Won Sik YOON , Ju Hyun KIM , Ha Il KWON , Kwang Hee KIM , Taehyung KIM , Su Jin PARK , Dae Young CHUNG
IPC: H10K50/115 , H10K50/15 , H10K50/16
CPC classification number: H10K50/115 , H10K50/156 , H10K50/16
Abstract: A quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the PEDOT:PSS, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. An electronic device that includes the quantum dot device.
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公开(公告)号：US20160018845A1
公开(公告)日：2016-01-21
申请号：US14802599
申请日：2015-07-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan KWAK , Jae-Young CHOI , Kwang Hee KIM , Jong Wook ROH , Hyeon Cheol PARK , Weon Ho SHIN , Yun Sung WOO , Hyosug LEE , Jinyoung HWANG
CPC classification number: G06F1/16 , G06F3/0416 , G06F3/044 , G06F2203/04103 , H05K1/0274 , H05K1/0298 , H05K1/09
Abstract: An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.
Abstract translation: 电极结构包括：第一非导电层; 设置在所述第一非导电层上的第一导电层; 设置在所述第一导电层上的第二非导电层; 设置在所述第二非导电层上的第二导电层; 以及设置在第二导电层上的第三非导电层，其中第一导电层和第二导电层中的至少一个包括二维导电材料。
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公开(公告)号：US20150155065A1
公开(公告)日：2015-06-04
申请号：US14461639
申请日：2014-08-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol PARK , Kwang Hee KIM , Chan KWAK , Yoon Chul SON , Sang Mock LEE
CPC classification number: H01B1/02 , C23C14/0036 , C23C14/0641 , C23C14/3414 , C23C14/3464 , H01B1/06 , H01B1/16 , H01L31/1892 , H01L33/42 , H01L51/5234 , Y10T428/26
Abstract: A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.
Abstract translation: 公开了一种透明导电薄膜和包括该透明导电薄膜的电子器件，所述透明导电薄膜包括氮化钛或具有选自锌（Zn），镓（Ga），铟（In））的异金属元素的氮化锆和 其组合。
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9.发明申请公开(公告)号：US20140308177A1
公开(公告)日：2014-10-16
申请号：US14177308
申请日：2014-02-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Keun woo Cho , Hyeon Cheol PARK , Kyoung-Seok MOON , Kwang Hee KIM , Jae-Ho LEE , Eun Seog CHO
IPC: B01J27/198 , B01J23/847 , B01D67/00
CPC classification number: B01J27/198 , B01D71/022 , B01D2325/10 , B01J27/1853 , B01J37/348 , C01B3/503 , H01M8/0687
Abstract: A hydrogen separation membrane including: a metal layer including the at least one Group 5 element; and a transition metal catalyst layer on the metal layer, the transition metal catalyst layer including at least one transition metal and at least one of phosphorus (P) or boron (B).
Abstract translation: 一种氢分离膜，包括：含有至少一种第5族元素的金属层; 和金属层上的过渡金属催化剂层，所述过渡金属催化剂层包含至少一种过渡金属和磷（P）或硼（B）中的至少一种。
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公开(公告)号：US20200333827A1
公开(公告)日：2020-10-22
申请号：US16917912
申请日：2020-07-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan KWAK , Jae-Young CHOI , Kwang Hee KIM , Jong Wook ROH , Hyeon Cheol PARK , Weon Ho SHIN , Yun Sung WOO , Hyosug LEE , Jinyoung HWANG
Abstract: An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.
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