公开(公告)号：US06869337B2

公开(公告)日：2005-03-22

申请号：US10770599

申请日：2004-02-03

Applicant: John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

Inventor： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

IPC: B24B37/04 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B1/00

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

Abstract translation: 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：US06705930B2

公开(公告)日：2004-03-16

申请号：US09754480

申请日：2001-01-04

Applicant: John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

Inventor： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

IPC: B24B2900

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

Abstract translation: 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：US06340326B1

公开(公告)日：2002-01-22

申请号：US09493978

申请日：2000-01-28

Applicant: Rod Kistler ,  Yehiel Gotkis

Inventor： Rod Kistler ,  Yehiel Gotkis

IPC: B23B2900

CPC classification number: B24B53/017 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

Abstract: A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

Abstract translation: 用于抛光半导体晶片的系统和方法包括可移动的抛光垫，其可相对于半导体晶片以多个部分重叠的构造定位。 与晶片共面并相邻设置的衬垫修整组件为不与晶片接触的抛光垫的一部分提供原位衬垫调节。 该方法包括相对于晶片径向移动抛光垫的步骤。

公开(公告)号：US06729943B2

公开(公告)日：2004-05-04

申请号：US10025379

申请日：2001-12-18

Applicant: Rod Kistler ,  Yehiel Gotkis

Inventor： Rod Kistler ,  Yehiel Gotkis

IPC: B24B2900

CPC classification number: B24B53/017 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

Abstract: A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

Abstract translation: 用于抛光半导体晶片的系统和方法包括可移动的抛光垫，其可相对于半导体晶片以多个部分重叠的构造定位。 与晶片共面并相邻设置的衬垫修整组件为不与晶片接触的抛光垫的一部分提供原位衬垫调节。 该方法包括相对于晶片径向移动抛光垫的步骤。

公开(公告)号：US07033250B2

公开(公告)日：2006-04-25

申请号：US10882935

申请日：2004-06-30

Applicant: Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

Inventor： Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

IPC: B24B1/00

CPC classification number: B24B37/12 ,  B24B21/08 ,  B24B49/16 ,  H01L21/30625

Abstract: An invention is provided for a chemical mechanical planarization apparatus. The apparatus includes a cylindrical frame, a polishing membrane attached to an end of the cylindrical frame, and a pad support disposed within the cylindrical frame and below the polishing membrane that is capable of differentially flexing the polishing membrane. The pad support can be air bearing that provides air pressure to the polishing membrane to differentially flex the polishing membrane during a CMP process. In a further aspect, the pad support can be in contact with the polishing membrane, and include mechanical elements that are capable of differentially flexing the polishing membrane during a CMP process. In addition, the apparatus can include a conditioner element disposed above the polishing membrane, and a conditioner pad support disposed below the polishing membrane and the conditioner element, wherein the conditioner element is capable of eroding the polishing membrane.

Abstract translation: 本发明提供一种化学机械平面化装置。 该装置包括圆柱形框架，附接到圆柱形框架的端部的抛光膜，以及设置在圆柱形框架内并且能够使抛光膜差分弯曲的抛光膜下方的垫支撑件。 衬垫支撑件可以是空气轴承，其在CMP工艺期间向抛光膜提供空气压力以差别地弯曲抛光膜。 在另一方面，衬垫支撑件可以与抛光膜接触，并且包括在CMP工艺期间能够使抛光膜差分弯曲的机械元件。 此外，该装置可以包括设置在抛光膜上方的调理元件，以及设置在抛光膜和调理元件下方的调节垫支撑件，其中调理元件能够侵蚀抛光膜。

公开(公告)号：US06808442B1

公开(公告)日：2004-10-26

申请号：US10027947

申请日：2001-12-20

Applicant: David Wei ,  Yehiel Gotkis ,  Aleksander Owczarz ,  John M. Boyd ,  Rod Kistler

Inventor： David Wei ,  Yehiel Gotkis ,  Aleksander Owczarz ,  John M. Boyd ,  Rod Kistler

IPC: B24B100

CPC classification number: B24B37/20 ,  B24B21/20

Abstract: An invention is provided for removal rate profile manipulation during a CMP process. An apparatus of the embodiments of the present invention includes an actuator capable of vertical movement perpendicular to a polishing surface of a polishing pad. The actuator is further capable of flexing the polishing pad independently of a pad support device. Also included in the apparatus is an actuator control mechanism that is in communication with the actuator. The actuator control mechanism is capable of controlling an amount of vertical movement of the actuator, allowing the actuator to provide local flexing of the polishing pad to achieve a particular removal rate profile. The actuator can also be capable of horizontal movement parallel to the polishing surface of the polishing pad.

Abstract translation: 提供了一种用于在CMP处理期间的去除速率轮廓操作的发明。 本发明的实施例的装置包括能够垂直于抛光垫的抛光表面垂直运动的致动器。 致动器还能够独立于衬垫支撑装置使抛光垫挠曲。 该装置中还包括与致动器连通的致动器控制机构。 致动器控制机构能够控制致动器的垂直运动量，从而允许致动器提供抛光垫的局部弯曲以实现特定的去除速率曲线。 致动器还能够平行于抛光垫的抛光表面的水平移动。

公开(公告)号：US06767428B1

公开(公告)日：2004-07-27

申请号：US10029192

申请日：2001-12-20

Applicant: Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

Inventor： Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

IPC: C23F102

CPC classification number: B24B37/12 ,  B24B21/08 ,  B24B49/16 ,  H01L21/30625

Abstract: An invention is provided for a chemical mechanical planarization apparatus. The apparatus includes a cylindrical frame, a polishing membrane attached to an end of the cylindrical frame, and a pad support disposed within the cylindrical frame and below the polishing membrane that is capable of differentially flexing the polishing membrane. The pad support can be air bearing that provides air pressure to the polishing membrane to differentially flex the polishing membrane during a CMP process. In a further aspect, the pad support can be in contact with the polishing membrane, and include mechanical elements that are capable of differentially flexing the polishing membrane during a CMP process. In addition, the apparatus can include a conditioner element disposed above the polishing membrane, and a conditioner pad support disposed below the polishing membrane and the conditioner element, wherein the conditioner element is capable of eroding the polishing membrane.

Abstract translation: 本发明提供一种化学机械平面化装置。 该装置包括圆柱形框架，附接到圆柱形框架的端部的抛光膜，以及设置在圆柱形框架内并且能够使抛光膜差分弯曲的抛光膜下方的垫支撑件。 衬垫支撑件可以是空气轴承，其在CMP工艺期间向抛光膜提供空气压力以差别地弯曲抛光膜。 在另一方面，衬垫支撑件可以与抛光膜接触，并且包括在CMP工艺期间能够使抛光膜差分弯曲的机械元件。 此外，该装置可以包括设置在抛光膜上方的调理元件，以及设置在抛光膜和调理元件下方的调节垫支撑件，其中调理元件能够侵蚀抛光膜。

公开(公告)号：US08206508B2

公开(公告)日：2012-06-26

申请号：US12027724

申请日：2008-02-07

Applicant: Yehiel Gotkis

Inventor： Yehiel Gotkis

IPC: B08B3/00

CPC classification number: B08B3/102 ,  H01L21/02057

Abstract: A method controllably and sustainably creates an upwardly directed gradient of dropping temperatures in a wet treatment tank between a cooled and face down workpiece (e.g., an in-process semiconductor wafer) and a lower down heat source. A thermal fluid upwell containing thermally collapsible bubbles is then directed from the heat source to the face down workpiece. In one class of embodiments, bubble collapse energy release and/or bubble collapse locations are controlled so as to avoid exposing delicate features of the to-be-treated surface to damaging forces. In one class of embodiments the wet treatment includes ultra-cleaning of the work face. Cleaning fluids that are essentially free of predefined contaminates are upwelled to the to-be-cleaned surface and potentially contaminated after-flows are convectively directed away from the workpiece so as to prevent recontamination of the workpiece.

Abstract translation: 方法可控地和可持续地产生在冷处理槽中的向上倾斜的温度梯度，所述湿处理槽在冷却和向下工件（例如，在工艺中的半导体晶片）和较低的下热源之间。 然后将含有热可收缩气泡的热流体上部井从热源引导到工件的正面。 在一类实施例中，控制气泡塌陷能量释放和/或气泡塌陷位置，以避免将被处理表面的微妙特征暴露于破坏力。 在一类实施例中，湿处理包括工作面的超清洁。 基本上没有预定污染物的清洁液体被上浮到待清洁的表面，并且可能被污染的后流动物被对流地远离工件，以防止工件的再污染。

公开(公告)号：US07581875B2

公开(公告)日：2009-09-01

申请号：US11713233

申请日：2007-02-28

Applicant: Yehiel Gotkis ,  Mikhail Korolik

Inventor： Yehiel Gotkis ,  Mikhail Korolik

IPC: G01N25/00 ,  G01K1/00

CPC classification number: G01B21/085

Abstract: A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.

Abstract translation: 提供了一种用于测量金属膜厚度的方法。 该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。 然后，测量金属膜的温度。 接下来，基于温度和限定的热能量计算金属膜的厚度。 还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。

公开(公告)号：US07309618B2

公开(公告)日：2007-12-18

申请号：US10463525

申请日：2003-06-18

Applicant: Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

Inventor： Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

IPC: H01L21/00

CPC classification number: B24B37/013 ,  B24B1/005 ,  B24B49/105 ,  B24B57/02 ,  H01L21/67253

Abstract: A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.

Abstract translation: 提供半导体处理系统。 半导体处理系统包括：第一传感器，被配置为隔离和测量具有设置在基板上的膜的晶片的膜厚度信号部分。 第二传感器被配置为在处理期间，即在实际工艺条件下和实时地在原位检测膜厚依赖信号。 控制器，被配置为从第一传感器接收信号和来自第二传感器的信号。 控制器能够根据来自第一传感器的信号表示的数据确定校准系数。 控制器能够将校准系数应用于与第二传感器相关联的数据，其中校准系数基本上消除了从衬底引入与膜厚度相关的信号的不准确性。 还提供了用于校准涡流传感器的方法。