摘要:
A polishing apparatus which can keep a width of a polishing tool constant when a peripheral portion of a substrate is polished by the polishing tool is disclosed. The polishing apparatus includes a substrate holder 3 configured to hold a substrate W and to rotate the substrate W and a pressing pad 50 configured to press a polishing tool 23 against a peripheral portion of the substrate W held by the substrate holder 3. The pressing pad 50 includes an elastic member 55 having a pressing surface 55a configured to press the polishing tool 23 against the peripheral portion of the substrate W and a support member 56 configured to support the elastic member 55. The support member 56 has a recess 57 formed in a front surface 56a of the support member 56, the elastic member 55 being capable of entering the recess 57.
摘要:
A method and an apparatus for processing a peripheral portion of a substrate, such as a wafer, are disclosed. The substrate processing method includes: holding a substrate on a substrate stage; rotating the substrate stage and the substrate about an axis of the substrate stage; directing a laser beam to an edge portion of the rotating substrate to form an annular crack in the substrate; and pressing a polishing tool against the edge portion of the rotating substrate to form a stepped recess in a peripheral portion of the substrate.
摘要:
A sanding machine for sanding panels, including a supporting structure, a sanding unit supported by the supporting structure, a surface for supporting and sliding of the panels located beneath the sanding unit and along which the panels are fed in a predetermined feed direction; the sanding unit including a trestle supporting a sanding belt, the trestle including a plurality of rollers having respective axes parallel to the supporting surface, the sanding belt being endless and looped around the rollers, one of the rollers being motorized to move the sanding belt during the sanding of the panels, the sanding unit further including at least one opposing member to force the belt against the panel to be sanded.
摘要:
The present invention relates to lining carrier for a sanding pad lining, in particular for use with a sanding pad for pressing sanding surfaces against workplaces in segment-belt and wide-belt sanding machines. Here, the lining carrier has at least one recess, in particular a groove.
摘要:
A polishing device includes a reducer, a polishing mechanism, a rotatably driven mechanism, and a sliding driving mechanism. The polishing mechanism is connected to the reducer. The rotatably driven mechanism includes a first driving member and a transmission shaft, the first driving member includes a first main body and an output shaft rotatably connected to first main body, the transmission shaft is fixed to the output shaft. Sliding driving mechanism includes a second driving member, the second driving member includes a second main body and a driving shaft collar connected to the second main body, the second main body is fixed to the first main body. The second main body and driving shaft collar cooperatively define a through hole. The transmission shaft extends through the through hole and is connected to the reducer to enable the polishing mechanism to polish a workpiece. The driving shaft is fixed to the reducer.
摘要:
A pad for polishing media disks has an elastomeric body with a Shore A hardness of not greater than 20, and a coating of polystyrene (PS) and a flexible polymer. The elastomeric pad may comprise styrene-isoprene-styrene block copolymers, or a styrene-ethylene-butylene-styrene block copolymer. The pad may be viscoleastic with a particulate composite coating. The pad may be a styrenic block copolymer and the coating is a different type of styrenic block copolymer containing solid particles. The coating may have a binder with a mixture of PS and flexible styrenic block copolymers, and filler particles comprising cross-linked PS/divinylbenzene polymer microspheres.
摘要:
A polishing apparatus polishes a periphery of a substrate by bringing a polishing tool into sliding contact with the substrate. The polishing apparatus includes a substrate-holding mechanism configured to hold a substrate and rotate the substrate, a polishing mechanism configured to press a polishing tool against a periphery of the substrate so as to polish the periphery, and a periphery-supporting mechanism configured to support the periphery of the substrate by a fluid. The periphery-supporting mechanism is configured to support a surface of the substrate from an opposite side or the same side of the periphery of the substrate.
摘要:
An invention is disclosed for improved performance in a CMP process using a pressurized membrane as a replacement for a platen air bearing. In one embodiment, a platen for improving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process.
摘要:
The present invention includes a polishing pad or belt secured to a mechanism that allows the pad or belt to move in a reciprocating manner, i.e. in both forward and reverse directions, at high speeds. The constant bidirectional movement of the polishing pad or belt as it polishes the wafer provides superior planarity and uniformity across the wafer surface. When a fresh portion of the pad is required, the pad is moved through a drive system containing rollers, such that the rollers only touch a back side of the pad, thereby minimizing sources of friction other than the wafer that is being polished from the polishing side of the pad, and maximizing the lifetime of the polishing pad.
摘要:
A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on a semiconductor wafer. The sensor monitors the fluid pressure to detect a change in the fluid pressure during polishing, which change corresponds to a change in the shear force when the polishing transitions from one material layer to the next. In order to ensure that there is a noticeable difference in the shear force variation at the polishing end point, a slurry having a particular pH level is selected. The pH level ensures that the zeta potential changes noticeably from one material to the next, so as to induce a change in the shear force, which is detected by a change in the fluid pressure.