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公开(公告)号：US08128278B2
公开(公告)日：2012-03-06
申请号：US12508838
申请日：2009-07-24
Applicant: Yehiel Gotkis , Mikhail Korolik
Inventor： Yehiel Gotkis , Mikhail Korolik
CPC classification number: G01B21/085
Abstract: A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
Abstract translation: 提供了一种用于测量金属膜厚度的方法。 该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。 然后，测量金属膜的温度。 接下来，基于温度和限定的热能量计算金属膜的厚度。 还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。
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公开(公告)号：US07204639B1
公开(公告)日：2007-04-17
申请号：US10672019
申请日：2003-09-26
Applicant: Yehiel Gotkis , Mikhail Korolik
Inventor： Yehiel Gotkis , Mikhail Korolik
CPC classification number: G01B21/085
Abstract: A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
Abstract translation: 提供了一种用于测量金属膜厚度的方法。 该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。 然后，测量金属膜的温度。 接下来，基于温度和限定的热能量计算金属膜的厚度。 还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。
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公开(公告)号：US07581875B2
公开(公告)日：2009-09-01
申请号：US11713233
申请日：2007-02-28
Applicant: Yehiel Gotkis , Mikhail Korolik
Inventor： Yehiel Gotkis , Mikhail Korolik
CPC classification number: G01B21/085
Abstract: A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
Abstract translation: 提供了一种用于测量金属膜厚度的方法。 该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。 然后，测量金属膜的温度。 接下来，基于温度和限定的热能量计算金属膜的厚度。 还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。
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公开(公告)号：US20090310643A1
公开(公告)日：2009-12-17
申请号：US12508838
申请日：2009-07-24
Applicant: Yehiel Gotkis , Mikhail Korolik
Inventor： Yehiel Gotkis , Mikhail Korolik
CPC classification number: G01B21/085
Abstract: A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
Abstract translation: 提供了一种用于测量金属膜厚度的方法。 该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。 然后，测量金属膜的温度。 接下来，基于温度和限定的热能量计算金属膜的厚度。 还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。
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公开(公告)号：US20070160107A1
公开(公告)日：2007-07-12
申请号：US11713233
申请日：2007-02-28
Applicant: Yehiel Gotkis , Mikhail Korolik
Inventor： Yehiel Gotkis , Mikhail Korolik
CPC classification number: G01B21/085
Abstract: A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
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Patent Agency Ranking
公开(公告)号：US08590550B2
公开(公告)日：2013-11-26
申请号：US12862091
申请日：2010-08-24
Applicant: Mikhail Korolik , Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker
Inventor： Mikhail Korolik , Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker
IPC: B08B3/00
CPC classification number: C11D11/0047 , B08B7/02 , C11D1/146 , C11D3/2079 , C11D9/02 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/6708 , H01L21/67086
Abstract: A substrate holder is defined to support a substrate. A rotating mechanism is defined to rotate the substrate holder. An applicator is defined to extend over the substrate holder to dispense a cleaning material onto a surface of the substrate when present on the substrate holder. The applicator is defined to apply a downward force to the cleaning material on the surface of the substrate. In one embodiment the cleaning material is gelatinous.
Abstract translation: 衬底支架限定为支撑衬底。 限定旋转机构以旋转衬底保持器。 施加器限定为在衬底保持器上延伸以在存在于衬底保持器上时将清洁材料分配到衬底的表面上。 施加器被限定为向衬底表面上的清洁材料施加向下的力。 在一个实施方案中，清洁材料是凝胶状的。
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公开(公告)号：US08522799B2
公开(公告)日：2013-09-03
申请号：US11532493
申请日：2006-09-15
Applicant: Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
Inventor： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
IPC: B08B3/00
CPC classification number: H01L21/67051 , B08B3/003 , B08B3/02
Abstract: An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.
Abstract translation: 公开了一种用于清洁衬底的设备。 该装置具有第一头单元和第二头单元。 第一头单元定位成接近基底的表面，并且具有限定在构造成向基底的表面提供泡沫的第一排通道。 第二头单元被定位成基本上与第一头单元相邻并且靠近衬底的表面。 第二和第三行通道被限定在第二头单元内。 第二排通道被配置成向衬底的表面提供流体。 第三排通道被配置为向基板的表面施加真空。
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公开(公告)号：US08242067B2
公开(公告)日：2012-08-14
申请号：US12862072
申请日：2010-08-24
Applicant: Mikhail Korolik , Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker
Inventor： Mikhail Korolik , Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker
IPC: C11D1/04
CPC classification number: C11D11/0047 , B08B7/02 , C11D1/146 , C11D3/2079 , C11D9/02 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/6708 , H01L21/67086
Abstract: A cleaning compound is disclosed for removing particulate contaminants from a semiconductor substrate surface. The cleaning compound includes a liquid and carboxylic acid solid components dispersed in a substantially uniform manner in the liquid. A concentration of the carboxylic acid solid components in the liquid exceeds a solubility limit of the carboxylic acid solid components in the liquid. In one embodiment, a concentration of the carboxylic acid solid components in the liquid is within a range extending from about 3 percent by weight to about 5 percent by weight. In one embodiment, the carboxylic acid solid components are defined by a carbon number of at least four. The carboxylic acid solid components are defined to interact with the particulate contaminants on the semiconductor substrate surface to remove the particulate contaminants from the semiconductor substrate surface. The cleaning compound is viscous and may be formed as a gel.
Abstract translation: 公开了用于从半导体衬底表面去除微粒污染物的清洁化合物。 清洁化合物包括以基本均匀的方式分散在液体中的液体和羧酸固体组分。 液体中羧酸固体组分的浓度超过了液体中羧酸固体组分的溶解度极限。 在一个实施方案中，液体中羧酸固体组分的浓度在约3重量％至约5重量％的范围内。 在一个实施方案中，羧酸固体组分由至少四个的碳数定义。 羧酸固体组分被定义为与半导体衬底表面上的颗粒污染物相互作用以从半导体衬底表面去除颗粒污染物。 清洁化合物是粘稠的并且可以形成为凝胶。
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9.发明申请公开(公告)号：US20120145202A1
公开(公告)日：2012-06-14
申请号：US13396047
申请日：2012-02-14
Applicant: Erik M. Freer , John M. de Larios , Katrina Mikhay Iichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
Inventor： Erik M. Freer , John M. de Larios , Katrina Mikhay Iichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC: B08B3/04
CPC classification number: H01L21/02052 , B08B7/02 , C11D3/2079 , C11D9/02 , C11D9/26 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/425 , G03F7/426 , H05K3/26
Abstract: A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.
Abstract translation: 提供清洁化合物。 清洁化合物包括分散在水中的约0.1重量％至约10重量％的脂肪酸。 清洁化合物包括一定量的足以使脂肪酸水溶液的pH达到大约50％的分散脂肪酸被离子化的水平的碱。 还提供了清洁基板的方法，用于清洁基板的系统以及通过工艺制备的清洁溶液。
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10.发明授权公开(公告)号：US07939139B2
公开(公告)日：2011-05-10
申请号：US12624369
申请日：2009-11-23
Applicant: Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
Inventor： Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
CPC classification number: C25D5/08 , B82Y40/00 , C25D5/22 , C25D7/12 , C25D17/001 , C25D17/02 , C25D21/10 , H01L21/67028 , H01L21/67034 , H01L21/67051
Abstract: Provided are methods for processing a substrate using a proximity system defined by one or more meniscus windows on one or more proximity heads. One method includes applying a first fluid meniscus to a surface of the substrate to apply a chemical precursor to the surface of the substrate. The first fluid meniscus is applied to first proximity meniscus window. Then, applying a second fluid meniscus to the surface of the substrate to leave an atomic layer of the chemical precursor on the surface of the substrate, through a second proximity meniscus window. A third fluid meniscus is applied to the surface of the substrate to apply a chemical reactant configured to react with the atomic layer of the chemical precursor to generate a layer of a material, through a third proximity meniscus window. The first, second and third proximity meniscus windows are arranged to apply the first fluid meniscus, the second fluid meniscus and the third fluid meniscus one after the other to a same location of the surface of the substrate during movement of the substrate through the proximity system.
Abstract translation: 提供了使用由一个或多个邻近头上的一个或多个弯液面窗口限定的接近系统来处理衬底的方法。 一种方法包括将第一流体弯月面施加到衬底的表面以将化学前体施加到衬底的表面。 第一流体弯液面被应用于第一接近弯月面窗口。 然后，将第二流体弯月面施加到衬底的表面，以通过第二接近弯月面窗口在衬底的表面上留下化学前体的原子层。 将第三流体弯液面施加到基底的表面，以施加配置成与化学前体的原子层反应以产生材料层的化学反应物，通过第三接近弯月面窗口。 第一，第二和第三接近弯液面窗口被布置成在衬底通过邻近系统移动期间将第一流体弯月面，第二流体弯月面和第三流体弯月面一个接一个地施加到衬底的表面的相同位置 。
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