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1.发明授权Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus 有权用于减少基板处理弯月面留下的入口和/或出口痕迹的载体公开(公告)号：US08105441B2
公开(公告)日：2012-01-31
申请号：US13094153
申请日：2011-04-26
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.
摘要翻译： 描述了在由上下接近头形成的弯液面的处理期间支撑衬底的载体。 载体包括具有开口的框架，该开口的尺寸用于容纳基底和用于将基底支撑在开口内的多个支撑销。 开口略大于基板，使得基板和开口之间存在间隙。 提供了用于减小基板上的入口和/或出口痕迹的尺寸和频率的手段，该装置帮助和鼓励来自弯月面的液体以排出间隙。 还提供了用于减小入口和出口标记的尺寸和频率的方法。
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公开(公告)号：US20100229890A1
公开(公告)日：2010-09-16
申请号：US12401590
申请日：2009-03-10
CPC分类号： H01L21/02057 , H01L21/67051
摘要： Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.
摘要翻译： 从基材表面去除颗粒污染物的设备和方法包括在表面上涂覆一层粘弹性材料。 粘弹性材料被涂覆为薄膜并呈现出显着的液体特性。 外力施加到涂覆有粘弹性材料的表面的第一区域，使得涂覆有粘弹性材料的表面的第二区域基本上不受施加的力。 施加力比粘弹性材料的固有时间短的持续时间，以获得粘弹性材料的固体特性。 具有固体样特性的粘弹性材料至少部分地与存在于表面上的至少一些颗粒污染物相互作用。 粘弹性材料与至少一些颗粒污染物一起从表面的第一区域去除，而粘弹性材料呈现出固体状特征。
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公开(公告)号：US07329321B2
公开(公告)日：2008-02-12
申请号：US11061944
申请日：2005-02-17
申请人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John deLarios
发明人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John deLarios
IPC分类号： B08B1/02
CPC分类号： H01L21/67028 , C23G1/00 , H01L21/67034 , H01L21/6704 , H01L21/67051 , Y10S134/902
摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.
摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。
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4.发明授权Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus 失效用于减少基板处理弯月面留下的入口和/或出口痕迹的载体公开(公告)号：US08534303B2
公开(公告)日：2013-09-17
申请号：US13324295
申请日：2011-12-13
IPC分类号： B08B11/02
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A carrier for supporting a substrate during processing by a meniscus fowled by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.
摘要翻译： 描述了用于在加工期间通过上和下邻近头部的弯液面来支撑衬底的载体。 载体包括具有开口的框架，该开口的尺寸用于容纳基底和用于将基底支撑在开口内的多个支撑销。 开口略大于基板，使得基板和开口之间存在间隙。 提供了用于减小基板上的入口和/或出口痕迹的尺寸和频率的手段，该装置帮助和鼓励来自弯月面的液体以排出间隙。 还提供了用于减小入口和出口标记的尺寸和频率的方法。
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公开(公告)号：US20130068261A1
公开(公告)日：2013-03-21
申请号：US13670006
申请日：2012-11-06
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： B08B3/04
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译： 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。
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公开(公告)号：US08317934B2
公开(公告)日：2012-11-27
申请号：US12465594
申请日：2009-05-13
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译： 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。
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7.发明申请Carrier for Reducing Entrance and/or Exit Marks Left by a Substrate-Processing Meniscus 有权用于减少入口和/或退出标记的载体由底物加工半月板留下公开(公告)号：US20110197928A1
公开(公告)日：2011-08-18
申请号：US13094153
申请日：2011-04-26
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.
摘要翻译： 描述了在由上下接近头形成的弯液面的处理期间支撑衬底的载体。 载体包括具有开口的框架，该开口的尺寸用于容纳基底和用于将基底支撑在开口内的多个支撑销。 开口略大于基板，使得基板和开口之间存在间隙。 提供了用于减小基板上的入口和/或出口痕迹的尺寸和频率的手段，该装置帮助和鼓励来自弯月面的液体以排出间隙。 还提供了用于减小入口和出口标记的尺寸和频率的方法。
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8.发明申请SYSTEM AND METHOD OF PREVENTING PATTERN COLLAPSE USING LOW SURFACE TENSION FLUID 审中-公开使用低表面张力流体防止图案褶皱的系统和方法公开(公告)号：US20110139183A1
公开(公告)日：2011-06-16
申请号：US12965828
申请日：2010-12-11
CPC分类号： H01L21/02057
摘要： A system for processing a wafer with a low surface tension liquid includes a low surface tension liquid source including a first heat source capable of heating the low surface tension liquid to not more than 25 degrees C. less than boiling point of the low surface tension liquid, a delivery mechanism for delivering the heated low surface tension liquid to an air/liquid interface region and a second heat source directed toward the air/liquid interface region, the second heat source capable of heating the air/liquid interface region to at least 2 degrees C. greater than the boiling point of the low surface tension liquid. A method for processing a wafer with a low surface tension liquid is also described.
摘要翻译： 用于处理具有低表面张力液体的晶片的系统包括低表面张力液体源，其包括能够将低表面张力液体加热至不超过25摄氏度的第一热源，低于低表面张力液体的沸点 ，用于将加热的低表面张力液体输送到空气/液体界面区域和朝向空气/液体界面区域的第二热源的输送机构，所述第二热源能够将空气/液体界面区域加热至至少2 大于低表面张力液体的沸点。 还描述了一种用于处理具有低表面张力液体的晶片的方法。
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9.发明授权公开(公告)号：US07939139B2
公开(公告)日：2011-05-10
申请号：US12624369
申请日：2009-11-23
申请人： Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
发明人： Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
CPC分类号： C25D5/08 , B82Y40/00 , C25D5/22 , C25D7/12 , C25D17/001 , C25D17/02 , C25D21/10 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： Provided are methods for processing a substrate using a proximity system defined by one or more meniscus windows on one or more proximity heads. One method includes applying a first fluid meniscus to a surface of the substrate to apply a chemical precursor to the surface of the substrate. The first fluid meniscus is applied to first proximity meniscus window. Then, applying a second fluid meniscus to the surface of the substrate to leave an atomic layer of the chemical precursor on the surface of the substrate, through a second proximity meniscus window. A third fluid meniscus is applied to the surface of the substrate to apply a chemical reactant configured to react with the atomic layer of the chemical precursor to generate a layer of a material, through a third proximity meniscus window. The first, second and third proximity meniscus windows are arranged to apply the first fluid meniscus, the second fluid meniscus and the third fluid meniscus one after the other to a same location of the surface of the substrate during movement of the substrate through the proximity system.
摘要翻译： 提供了使用由一个或多个邻近头上的一个或多个弯液面窗口限定的接近系统来处理衬底的方法。 一种方法包括将第一流体弯月面施加到衬底的表面以将化学前体施加到衬底的表面。 第一流体弯液面被应用于第一接近弯月面窗口。 然后，将第二流体弯月面施加到衬底的表面，以通过第二接近弯月面窗口在衬底的表面上留下化学前体的原子层。 将第三流体弯液面施加到基底的表面，以施加配置成与化学前体的原子层反应以产生材料层的化学反应物，通过第三接近弯月面窗口。 第一，第二和第三接近弯液面窗口被布置成在衬底通过邻近系统移动期间将第一流体弯月面，第二流体弯月面和第三流体弯月面一个接一个地施加到衬底的表面的相同位置 。
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公开(公告)号：US20110048467A1
公开(公告)日：2011-03-03
申请号：US12942446
申请日：2010-11-09
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , Y10S134/902
摘要： An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.
摘要翻译： 上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。
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