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公开(公告)号：US07329321B2
公开(公告)日：2008-02-12
申请号：US11061944
申请日：2005-02-17
申请人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John deLarios
发明人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John deLarios
IPC分类号： B08B1/02
CPC分类号： H01L21/67028 , C23G1/00 , H01L21/67034 , H01L21/6704 , H01L21/67051 , Y10S134/902
摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.
摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。
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公开(公告)号：US07568488B2
公开(公告)日：2009-08-04
申请号：US11954167
申请日：2007-12-11
申请人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John deLarios
发明人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John deLarios
IPC分类号： B08B3/00
CPC分类号： H01L21/67028 , C23G1/00 , H01L21/67034 , H01L21/6704 , H01L21/67051 , Y10S134/902
摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.
摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。
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公开(公告)号：US20080169008A1
公开(公告)日：2008-07-17
申请号：US11954167
申请日：2007-12-11
申请人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John de Larios
发明人： Seokmin Yun , John M. Boyd , Mark Wilcoxson , John de Larios
IPC分类号： B08B13/00
CPC分类号： H01L21/67028 , C23G1/00 , H01L21/67034 , H01L21/6704 , H01L21/67051 , Y10S134/902
摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.
摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。
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公开(公告)号：US08277675B2
公开(公告)日：2012-10-02
申请号：US11644779
申请日：2006-12-21
申请人： Seokmin Yun , Seong Hwan Cho , Shrikant Lohokare , Mark Wilcoxson , John M. De Larios , Stephan Hoffmann
发明人： Seokmin Yun , Seong Hwan Cho , Shrikant Lohokare , Mark Wilcoxson , John M. De Larios , Stephan Hoffmann
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.
摘要翻译： 用于从低k电介质膜层去除损坏的材料的装置，系统和方法包括识别控制化学物质，配置为选择性地从低k电介质膜层去除损坏的材料的控制化学品，损坏的材料在 通过低k电介质膜层形成特征的区域; 建立表征要去除的损坏材料的方面的多个工艺参数，并将控制化学物质应用于低k电介质膜层，控制化学品的应用基于已建立的损坏材料的工艺参数来定义，使得 损坏的材料基本上从特征周围的区域移除，并且特征周围的区域基本上由低k电介质膜层的低k特性限定。
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公开(公告)号：US20090211596A1
公开(公告)日：2009-08-27
申请号：US11827479
申请日：2007-07-11
申请人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
发明人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
摘要翻译： 用于从衬底的表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底的表面去除蚀刻后聚合物残余物的干闪光化学物质。 干闪光化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。 使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。 然后将湿清洗化学品施加到基底的表面。 湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。
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公开(公告)号：US20100229890A1
公开(公告)日：2010-09-16
申请号：US12401590
申请日：2009-03-10
CPC分类号： H01L21/02057 , H01L21/67051
摘要： Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.
摘要翻译： 从基材表面去除颗粒污染物的设备和方法包括在表面上涂覆一层粘弹性材料。 粘弹性材料被涂覆为薄膜并呈现出显着的液体特性。 外力施加到涂覆有粘弹性材料的表面的第一区域，使得涂覆有粘弹性材料的表面的第二区域基本上不受施加的力。 施加力比粘弹性材料的固有时间短的持续时间，以获得粘弹性材料的固体特性。 具有固体样特性的粘弹性材料至少部分地与存在于表面上的至少一些颗粒污染物相互作用。 粘弹性材料与至少一些颗粒污染物一起从表面的第一区域去除，而粘弹性材料呈现出固体状特征。
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公开(公告)号：US07597765B2
公开(公告)日：2009-10-06
申请号：US11477299
申请日：2006-06-28
申请人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
发明人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译： 公开了一种用于清洁半导体晶片表面的方法。 将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。 用晶片表面上的一些污染物去除第一个清洁溶液。 接下来，将氧化剂溶液施加到晶片表面。 氧化剂溶液在剩余的污染物上形成氧化层。 除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。 从晶片表面去除第二清洗溶液。 清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。
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公开(公告)号：US20090246372A1
公开(公告)日：2009-10-01
申请号：US11803501
申请日：2007-05-14
申请人： Seokmin Yun , Mark Wilcoxson
发明人： Seokmin Yun , Mark Wilcoxson
IPC分类号： C23C16/00
CPC分类号： B08B3/00 , H01L21/67046 , H01L21/67051
摘要： An apparatus, system and method for preventing premature drying of a surface of a substrate between fabrication operations includes receiving a substrate for cleaning, performing wet cleaning operations to the surface of the substrate to remove contaminants and fabrication chemistries left behind during one or more fabrication operations from the surface of the substrate, identifying a saturated gas chemistry and applying the identified saturated gas chemistry in a transition region such that the surface of the substrate exposed to the saturated gas chemistry in the transition region retains the moisture thereby preventing the surface of the substrate from premature drying. The saturated gas chemistry is applied between two subsequent wet-cleaning operations.
摘要翻译： 用于在制造操作之间防止衬底表面的过早干燥的装置，系统和方法包括接收用于清洁的衬底，对衬底的表面进行湿式清洁操作，以去除在一个或多个制造操作期间留下的污染物和制造化学物质 从衬底的表面，识别饱和气体化学物质并将所鉴定的饱和气体化学物质应用于过渡区域，使得暴露于过渡区域中的饱和气体化学物质的衬底的表面保持水分，从而防止衬底的表面 从过早的干燥。 饱和气体化学性质应用于两次后续的湿法清洗操作。
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公开(公告)号：US20090229638A1
公开(公告)日：2009-09-17
申请号：US12048188
申请日：2008-03-13
申请人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
发明人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译： 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。
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公开(公告)号：US20090173718A1
公开(公告)日：2009-07-09
申请号：US11644779
申请日：2006-12-21
申请人： Seokmin Yun , Seong Hwan Cho , Shrikant Lohohare , Mark Wilcoxson , John M. de Larios , Stephan Hoffmann
发明人： Seokmin Yun , Seong Hwan Cho , Shrikant Lohohare , Mark Wilcoxson , John M. de Larios , Stephan Hoffmann
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.
摘要翻译： 用于从低k电介质膜层去除损坏的材料的装置，系统和方法包括识别控制化学物质，配置为选择性地从低k电介质膜层去除损坏的材料的控制化学品，损坏的材料在 通过低k电介质膜层形成特征的区域; 建立表征要去除的损坏材料的方面的多个工艺参数，并将控制化学物质应用于低k电介质膜层，控制化学品的应用基于已建立的损坏材料的工艺参数来定义，使得 损坏的材料基本上从特征周围的区域移除，并且特征周围的区域基本上由低k电介质膜层的低k特性限定。
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