公开(公告)号：US20130098392A1

公开(公告)日：2013-04-25

申请号：US13281014

申请日：2011-10-25

申请人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

发明人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

IPC分类号： B08B3/08 ,  C23G3/00 ,  H01L21/02

CPC分类号： C11D7/06 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/14 ,  C23G3/00 ,  H01L21/02057 ,  H01L21/67051

摘要： In a method and apparatus for treating a surface of an article, an improved rinse liquid prevents build-up of static charge while avoiding damages to certain types of exposed metal-containing surfaces. In one embodiment, a semiconductor wafer having structures including at least one of cobalt, nickel and platinum is rotated on a spin chuck, as a rinse liquid is dispensed onto a surface of the wafer. The rinse liquid is a dilute aqueous solution of a base of the formula in which R1, R2 and R3 are each independently selected from hydrogen and C1-4 alkyl. The base has a boiling point less than 100° C., and the rinse liquid has a pH in the range of 8 to 10.

摘要翻译： 在用于处理制品表面的方法和装置中，改进的冲洗液防止静电荷的积聚，同时避免损坏某些类型的暴露的含金属表面。 在一个实施例中，具有包括钴，镍和铂中的至少一种的结构的半导体晶片在旋转卡盘上旋转，因为冲洗液体被分配到晶片的表面上。 漂洗液是下式碱的稀水溶液，其中R 1，R 2和R 3各自独立地选自氢和C 1-4烷基。 碱的沸点低于100℃，漂洗液的pH值在8〜10的范围内。

公开(公告)号：US20090173718A1

公开(公告)日：2009-07-09

申请号：US11644779

申请日：2006-12-21

申请人： Seokmin Yun ,  Seong Hwan Cho ,  Shrikant Lohohare ,  Mark Wilcoxson ,  John M. de Larios ,  Stephan Hoffmann

发明人： Seokmin Yun ,  Seong Hwan Cho ,  Shrikant Lohohare ,  Mark Wilcoxson ,  John M. de Larios ,  Stephan Hoffmann

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.

摘要翻译： 用于从低k电介质膜层去除损坏的材料的装置，系统和方法包括识别控制化学物质，配置为选择性地从低k电介质膜层去除损坏的材料的控制化学品，损坏的材料在 通过低k电介质膜层形成特征的区域; 建立表征要去除的损坏材料的方面的多个工艺参数，并将控制化学物质应用于低k电介质膜层，控制化学品的应用基于已建立的损坏材料的工艺参数来定义，使得 损坏的材料基本上从特征周围的区域移除，并且特征周围的区域基本上由低k电介质膜层的低k特性限定。

公开(公告)号：US20080014627A1

公开(公告)日：2008-01-17

申请号：US11771972

申请日：2007-06-29

申请人： Adnan Merchant ,  Michael Holzbaur ,  Stephan Hoffmann ,  Doug Sutton ,  Mark Deem ,  Steve Pence

发明人： Adnan Merchant ,  Michael Holzbaur ,  Stephan Hoffmann ,  Doug Sutton ,  Mark Deem ,  Steve Pence

IPC分类号： C12N1/06

CPC分类号： A61M37/0092

摘要： A device for generating microbubbles in a gas and liquid mixture and injection device, the device comprising a housing defining a mixing chamber; means for mixing solution contained in the mixing chamber to generate microbubbles in the solution; and a needle array removably attached to the housing and in fluid connection with the mixing chamber, the needle array including at least one needle.

摘要翻译： 一种用于在气体和液体混合物和注射装置中产生微泡的装置，所述装置包括限定混合室的壳体; 用于混合包含在混合室中的溶液以在溶液中产生微泡的装置; 以及可拆卸地附接到所述壳体并与所述混合室流体连接的针阵列，所述针阵列包括至少一个针。

公开(公告)号：US09090854B2

公开(公告)日：2015-07-28

申请号：US13281014

申请日：2011-10-25

申请人： Stephan Hoffmann ,  Harald Kraus ,  Gunter Mettin

发明人： Stephan Hoffmann ,  Harald Kraus ,  Gunter Mettin

IPC分类号： C23G1/00 ,  C11D7/06 ,  C23G3/00 ,  H01L21/02 ,  H01L21/67 ,  C11D11/00 ,  C23G1/14 ,  C11D7/32

CPC分类号： C11D7/06 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/14 ,  C23G3/00 ,  H01L21/02057 ,  H01L21/67051

摘要： In a method and apparatus for treating a surface of an article, an improved rinse liquid prevents build-up of static charge while avoiding damages to certain types of exposed metal-containing surfaces. In one embodiment, a semiconductor wafer having structures including at least one of cobalt, nickel and platinum is rotated on a spin chuck, as a rinse liquid is dispensed onto a surface of the wafer. The rinse liquid is a dilute aqueous solution of a base of the formula in which R1, R2 and R3 are each independently selected from hydrogen and C1-4 alkyl. The base has a boiling point less than 100° C., and the rinse liquid has a pH in the range of 8 to 10.

摘要翻译： 在用于处理制品表面的方法和装置中，改进的冲洗液防止静电荷的积聚，同时避免损坏某些类型的暴露的含金属表面。 在一个实施例中，具有包括钴，镍和铂中的至少一种的结构的半导体晶片在旋转卡盘上旋转，因为冲洗液体被分配到晶片的表面上。 漂洗液是下式碱的稀水溶液，其中R 1，R 2和R 3各自独立地选自氢和C 1-4烷基。 碱的沸点低于100℃，漂洗液的pH值在8〜10的范围内。

公开(公告)号：US20130098391A1

公开(公告)日：2013-04-25

申请号：US13277527

申请日：2011-10-20

申请人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

发明人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

IPC分类号： H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  C23G1/14

CPC分类号： C11D7/06 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/14 ,  C23G3/00 ,  H01L21/02057 ,  H01L21/67051

摘要： In a method and apparatus for treating a surface of an article, an improved rinse liquid prevents build-up of static charge while avoiding damages to certain types of exposed metal surfaces. In one embodiment, a semiconductor wafer having structures including at least one of cobalt, nickel and platinum is rotated on a spin chuck, as a rinse liquid is dispensed onto a surface of the wafer. The rinse liquid is a dilute aqueous solution of a base of the formula in which R1, R2 and R3 are each independently selected from hydrogen and C1-4 alkyl. The base has a boiling point less than 100° C., and the rinse liquid has a pH in the range of 8 to 10.

摘要翻译： 在用于处理制品表面的方法和装置中，改进的冲洗液体防止静电荷的积聚，同时避免损坏某些类型的暴露的金属表面。 在一个实施例中，具有包括钴，镍和铂中的至少一种的结构的半导体晶片在旋转卡盘上旋转，因为冲洗液体被分配到晶片的表面上。 漂洗液是下式碱的稀水溶液，其中R 1，R 2和R 3各自独立地选自氢和C 1-4烷基。 碱的沸点低于100℃，漂洗液的pH值在8〜10的范围内。

公开(公告)号：US08277675B2

公开(公告)日：2012-10-02

申请号：US11644779

申请日：2006-12-21

申请人： Seokmin Yun ,  Seong Hwan Cho ,  Shrikant Lohokare ,  Mark Wilcoxson ,  John M. De Larios ,  Stephan Hoffmann

发明人： Seokmin Yun ,  Seong Hwan Cho ,  Shrikant Lohokare ,  Mark Wilcoxson ,  John M. De Larios ,  Stephan Hoffmann

IPC分类号： B44C1/22 ,  B08B7/04

CPC分类号： H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.

摘要翻译： 用于从低k电介质膜层去除损坏的材料的装置，系统和方法包括识别控制化学物质，配置为选择性地从低k电介质膜层去除损坏的材料的控制化学品，损坏的材料在 通过低k电介质膜层形成特征的区域; 建立表征要去除的损坏材料的方面的多个工艺参数，并将控制化学物质应用于低k电介质膜层，控制化学品的应用基于已建立的损坏材料的工艺参数来定义，使得 损坏的材料基本上从特征周围的区域移除，并且特征周围的区域基本上由低k电介质膜层的低k特性限定。

公开(公告)号：US20100293842A1

公开(公告)日：2010-11-25

申请号：US12863498

申请日：2009-01-21

申请人： Wolfgang Kasel ,  Irene Troetsch-Schaller ,  Peter Spang ,  Frank-Olaf Maehling ,  Andreas Daiss ,  Andreas Bauder ,  Anja Vinckier ,  Stefan Hirsch ,  Matthias Frohberger ,  Siegfried Willert ,  Peter Schaeffler ,  Stephan Hoffmann

发明人： Wolfgang Kasel ,  Irene Troetsch-Schaller ,  Peter Spang ,  Frank-Olaf Maehling ,  Andreas Daiss ,  Andreas Bauder ,  Anja Vinckier ,  Stefan Hirsch ,  Matthias Frohberger ,  Siegfried Willert ,  Peter Schaeffler ,  Stephan Hoffmann

IPC分类号： C10L1/195

CPC分类号： C10L1/143 ,  C10L1/1616 ,  C10L1/1973 ,  C10L10/14

摘要： The invention relates to a method for producing additive mixtures for fuel oils by mixing at least two additive components in a dynamic mixer or a lamination mixer. The invention further relates to additive mixtures obtained by said method and fuel oil compositions containing said additive mixtures.

摘要翻译： 本发明涉及通过在动态混合器或层压混合器中混合至少两种添加剂组分来生产用于燃料油的添加剂混合物的方法。 本发明还涉及通过所述方法获得的添加剂混合物和含有所述添加剂混合物的燃料油组合物。