公开(公告)号：US20130098392A1

公开(公告)日：2013-04-25

申请号：US13281014

申请日：2011-10-25

申请人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

发明人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

IPC分类号： B08B3/08 ,  C23G3/00 ,  H01L21/02

CPC分类号： C11D7/06 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/14 ,  C23G3/00 ,  H01L21/02057 ,  H01L21/67051

摘要： In a method and apparatus for treating a surface of an article, an improved rinse liquid prevents build-up of static charge while avoiding damages to certain types of exposed metal-containing surfaces. In one embodiment, a semiconductor wafer having structures including at least one of cobalt, nickel and platinum is rotated on a spin chuck, as a rinse liquid is dispensed onto a surface of the wafer. The rinse liquid is a dilute aqueous solution of a base of the formula in which R1, R2 and R3 are each independently selected from hydrogen and C1-4 alkyl. The base has a boiling point less than 100° C., and the rinse liquid has a pH in the range of 8 to 10.

摘要翻译： 在用于处理制品表面的方法和装置中，改进的冲洗液防止静电荷的积聚，同时避免损坏某些类型的暴露的含金属表面。 在一个实施例中，具有包括钴，镍和铂中的至少一种的结构的半导体晶片在旋转卡盘上旋转，因为冲洗液体被分配到晶片的表面上。 漂洗液是下式碱的稀水溶液，其中R 1，R 2和R 3各自独立地选自氢和C 1-4烷基。 碱的沸点低于100℃，漂洗液的pH值在8〜10的范围内。

公开(公告)号：US09090854B2

公开(公告)日：2015-07-28

申请号：US13281014

申请日：2011-10-25

申请人： Stephan Hoffmann ,  Harald Kraus ,  Gunter Mettin

发明人： Stephan Hoffmann ,  Harald Kraus ,  Gunter Mettin

IPC分类号： C23G1/00 ,  C11D7/06 ,  C23G3/00 ,  H01L21/02 ,  H01L21/67 ,  C11D11/00 ,  C23G1/14 ,  C11D7/32

CPC分类号： C11D7/06 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/14 ,  C23G3/00 ,  H01L21/02057 ,  H01L21/67051

摘要： In a method and apparatus for treating a surface of an article, an improved rinse liquid prevents build-up of static charge while avoiding damages to certain types of exposed metal-containing surfaces. In one embodiment, a semiconductor wafer having structures including at least one of cobalt, nickel and platinum is rotated on a spin chuck, as a rinse liquid is dispensed onto a surface of the wafer. The rinse liquid is a dilute aqueous solution of a base of the formula in which R1, R2 and R3 are each independently selected from hydrogen and C1-4 alkyl. The base has a boiling point less than 100° C., and the rinse liquid has a pH in the range of 8 to 10.

摘要翻译： 在用于处理制品表面的方法和装置中，改进的冲洗液防止静电荷的积聚，同时避免损坏某些类型的暴露的含金属表面。 在一个实施例中，具有包括钴，镍和铂中的至少一种的结构的半导体晶片在旋转卡盘上旋转，因为冲洗液体被分配到晶片的表面上。 漂洗液是下式碱的稀水溶液，其中R 1，R 2和R 3各自独立地选自氢和C 1-4烷基。 碱的沸点低于100℃，漂洗液的pH值在8〜10的范围内。

公开(公告)号：US20130098391A1

公开(公告)日：2013-04-25

申请号：US13277527

申请日：2011-10-20

申请人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

发明人： Stephan HOFFMANN ,  Harald KRAUS ,  Gunter METTIN

IPC分类号： H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  C23G1/14

CPC分类号： C11D7/06 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/14 ,  C23G3/00 ,  H01L21/02057 ,  H01L21/67051

摘要： In a method and apparatus for treating a surface of an article, an improved rinse liquid prevents build-up of static charge while avoiding damages to certain types of exposed metal surfaces. In one embodiment, a semiconductor wafer having structures including at least one of cobalt, nickel and platinum is rotated on a spin chuck, as a rinse liquid is dispensed onto a surface of the wafer. The rinse liquid is a dilute aqueous solution of a base of the formula in which R1, R2 and R3 are each independently selected from hydrogen and C1-4 alkyl. The base has a boiling point less than 100° C., and the rinse liquid has a pH in the range of 8 to 10.

摘要翻译： 在用于处理制品表面的方法和装置中，改进的冲洗液体防止静电荷的积聚，同时避免损坏某些类型的暴露的金属表面。 在一个实施例中，具有包括钴，镍和铂中的至少一种的结构的半导体晶片在旋转卡盘上旋转，因为冲洗液体被分配到晶片的表面上。 漂洗液是下式碱的稀水溶液，其中R 1，R 2和R 3各自独立地选自氢和C 1-4烷基。 碱的沸点低于100℃，漂洗液的pH值在8〜10的范围内。