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    METHOD OF DIELECTRIC FILM TREATMENT
    1.
    发明申请
    METHOD OF DIELECTRIC FILM TREATMENT 有权
    电介质膜处理方法

    公开(公告)号：US20090229638A1

    公开(公告)日：2009-09-17

    申请号：US12048188

    申请日：2008-03-13

    申请人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

    发明人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

    IPC分类号： B08B3/04

    CPC分类号： H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

    摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

    摘要翻译： 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

    Method of dielectric film treatment
    2.
    发明授权
    Method of dielectric film treatment 有权
    介电膜处理方法

    公开(公告)号：US09236279B2

    公开(公告)日：2016-01-12

    申请号：US12048188

    申请日：2008-03-13

    申请人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

    发明人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

    IPC分类号： B08B3/04 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311

    CPC分类号： H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

    摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

    摘要翻译： 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

    METHOD OF DIELECTRIC FILM TREATMENT
    3.
    发明申请
    METHOD OF DIELECTRIC FILM TREATMENT 有权
    电介质膜处理方法

    公开(公告)号：US20140048108A9

    公开(公告)日：2014-02-20

    申请号：US12048188

    申请日：2008-03-13

    申请人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

    发明人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

    IPC分类号： B08B3/04

    CPC分类号： H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

    摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

    摘要翻译： 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

    Method of preventing pattern collapse during rinsing and drying
    4.
    发明授权
    Method of preventing pattern collapse during rinsing and drying 有权
    防止漂洗和干燥期间图案塌陷的方法

    公开(公告)号：US07967916B2

    公开(公告)日：2011-06-28

    申请号：US12048412

    申请日：2008-03-14

    申请人： Seokmin Yun ,  John M. deLarios

    发明人： Seokmin Yun ,  John M. deLarios

    IPC分类号： B08B3/00 ,  B08B5/04

    CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  Y10S134/902

    摘要： A system and method for preventing a pattern formed on a substrate from collapsing during a rinsing and drying phase of a fabrication operation includes determining a plurality of process parameters associated with a rinsing chemistry used during the rinsing operation. The process parameters define the characteristics of the rinsing chemistry and a substrate surface layer. A chemistry to reduce the surface tension of the rinsing chemistry (surface tension reducer) with at least one low surfactant chemical is identified based on the process parameters of the rinsing chemistry. The surface tension reducer is applied to the surface of the substrate such that the low surfactant chemical reduces the surface tension of the rinsing chemistry applied to the surface of the substrate thereby preventing the pattern from collapsing.

    摘要翻译： 用于防止在制造操作的漂洗和干燥阶段期间形成在衬底上的图案塌陷的系统和方法包括确定与漂洗操作期间使用的漂洗化学相关联的多个工艺参数。 工艺参数定义漂洗化学品的特征和基材表面层。 基于漂洗化学品的工艺参数，确定了用至少一种低表面活性剂化学品降低漂洗化学物（表面张力减小剂）表面张力的化学物质。 将表面张力减小剂施加到基材的表面，使得低表面活性剂化学品降低施加到基材表面的漂洗化学品的表面张力，从而防止图案塌陷。

    Drying a substrate using a combination of substrate processing technologies
    8.
    发明授权
    Drying a substrate using a combination of substrate processing technologies 失效
    使用基板处理技术的组合干燥基板

    公开(公告)号：US06770151B1

    公开(公告)日：2004-08-03

    申请号：US10196497

    申请日：2002-07-15

    申请人： Michael Ravkin ,  Katrina Mikhaylichenko ,  John M. deLarios

    发明人： Michael Ravkin ,  Katrina Mikhaylichenko ,  John M. deLarios

    IPC分类号： B08B704

    CPC分类号： H01L21/02052 ,  H01L21/31111 ,  H01L21/67028 ,  H01L21/67034

    摘要： Methods for rinsing and drying a substrate are provided. In one example, a method for rinsing and drying a substrate includes providing a substrate for processing and securing the substrate in a hollow spin chuck. The hollow spin chuck with the substrate positioned therein is rotated at a first rate of rotation while a rinsing agent and a surface tension modifying agent are dispensed at a position that is an approximate center of the spinning substrate on both an active surface and a backside surface of the substrate. The dispensing is moved from the approximate center of the spinning substrate radially outward towards a periphery of the substrate. The dispensing is then discontinued, and the hollow spin chuck with the substrate positioned therein is rotated at a second rate of rotation.

    摘要翻译： 提供漂洗和干燥基材的方法。 在一个实例中，用于冲洗和干燥衬底的方法包括提供用于将衬底加工并固定在中空自旋卡盘中的衬底。 将位于其中的基板的空心旋转卡盘以第一旋转速度旋转，同时将漂洗剂和表面张力改性剂分配在活性表面和背面上的纺丝基材的大致中心的位置 的基底。 分配从旋转衬底的大致中心径向向外移动到衬底的周边。 然后中止分配，并且其中定位有基底的空心旋转卡盘以第二旋转速度旋转。