公开(公告)号：US07597765B2

公开(公告)日：2009-10-06

申请号：US11477299

申请日：2006-06-28

申请人： Ji Zhu ,  Seokmin Yun ,  Mark Wilcoxson ,  John de Larios

发明人： Ji Zhu ,  Seokmin Yun ,  Mark Wilcoxson ,  John de Larios

IPC分类号： B08B3/08 ,  C23G1/02

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.

摘要翻译： 公开了一种用于清洁半导体晶片表面的方法。 将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。 用晶片表面上的一些污染物去除第一个清洁溶液。 接下来，将氧化剂溶液施加到晶片表面。 氧化剂溶液在剩余的污染物上形成氧化层。 除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。 从晶片表面去除第二清洗溶液。 清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

公开(公告)号：US20070240737A1

公开(公告)日：2007-10-18

申请号：US11477299

申请日：2006-06-28

申请人： Ji Zhu ,  Seokmin Yun ,  Mark Wilcoxson ,  John de Larios

发明人： Ji Zhu ,  Seokmin Yun ,  Mark Wilcoxson ,  John de Larios

IPC分类号： C23G1/00 ,  C23G1/02 ,  B08B3/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.

摘要翻译： 公开了一种用于清洁半导体晶片表面的方法。 将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。 用晶片表面上的一些污染物去除第一个清洁溶液。 接下来，将氧化剂溶液施加到晶片表面。 氧化剂溶液在剩余的污染物上形成氧化层。 除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。 从晶片表面去除第二清洗溶液。 清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

公开(公告)号：US20080169008A1

公开(公告)日：2008-07-17

申请号：US11954167

申请日：2007-12-11

申请人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John de Larios

发明人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John de Larios

IPC分类号： B08B13/00

CPC分类号： H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。

公开(公告)号：US20090211596A1

公开(公告)日：2009-08-27

申请号：US11827479

申请日：2007-07-11

申请人： Seokmin Yun ,  Mark Wilcoxson ,  Ji Zhu ,  Kevin Chuang ,  Hsiao Wei Chang ,  David Lou

发明人： Seokmin Yun ,  Mark Wilcoxson ,  Ji Zhu ,  Kevin Chuang ,  Hsiao Wei Chang ,  David Lou

IPC分类号： B08B7/00 ,  B08B3/00

CPC分类号： H01L21/02063 ,  H01L21/6708

摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

摘要翻译： 用于从衬底的表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底的表面去除蚀刻后聚合物残余物的干闪光化学物质。 干闪光化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。 使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。 然后将湿清洗化学品施加到基底的表面。 湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。

公开(公告)号：US20120115332A1

公开(公告)日：2012-05-10

申请号：US13354322

申请日：2012-01-19

申请人： Seokmin Yun ,  Mark Wilcoxson ,  Ji Zhu ,  Kevin Chuang ,  Hsiao Wei Chang ,  David Lou

发明人： Seokmin Yun ,  Mark Wilcoxson ,  Ji Zhu ,  Kevin Chuang ,  Hsiao Wei Chang ,  David Lou

IPC分类号： H01L21/3065

CPC分类号： H01L21/02063 ,  H01L21/6708

摘要： A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The etching is terminated. A dry flash chemistry is applied into the plasma chamber. The plasma chamber is powered for a period of time between about 5 seconds and about 10 seconds to perform a dry flash etch. During the dry flash etch, the chamber is set to a low pressure of between about 5 mTorr and about 40 mTorr. The dry flash etch acts to weaken adhesion of the etch polymer residues to the features. The substrate is moved from plasma chamber and into a wet clean chamber for cleaning which removes the etch polymer residues during fluid cleaning.

摘要翻译： 一种用于处理衬底的方法包括：在等离子体室中使用蚀刻化学法蚀刻衬底的表面，蚀刻被配置为在衬底的表面上限定一个或多个特征。 这些特征由于蚀刻而具有一些蚀刻聚合物残留物。 蚀刻终止。 将干闪光化学物质施加到等离子体室中。 等离子体室在约5秒至约10秒之间的时间内供电以进行干闪光蚀刻。 在干闪光蚀刻期间，室设定在约5mTorr至约40mTorr之间的低压。 干闪光蚀刻用于削弱蚀刻聚合物残留物对特征的粘附。 衬底从等离子体室移动到用于清洁的湿式清洁室中，其在流体清洁期间除去蚀刻聚合物残余物。

公开(公告)号：US20090229638A1

公开(公告)日：2009-09-17

申请号：US12048188

申请日：2008-03-13

申请人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

发明人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

摘要翻译： 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

公开(公告)号：US09236279B2

公开(公告)日：2016-01-12

申请号：US12048188

申请日：2008-03-13

申请人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

发明人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

IPC分类号： B08B3/04 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311

CPC分类号： H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

摘要翻译： 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

公开(公告)号：US20140048108A9

公开(公告)日：2014-02-20

申请号：US12048188

申请日：2008-03-13

申请人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

发明人： Seokmin Yun ,  Ji Zhu ,  John M. deLarios ,  Mark Wilcoxson

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

摘要翻译： 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

公开(公告)号：US20100229890A1

公开(公告)日：2010-09-16

申请号：US12401590

申请日：2009-03-10

申请人： Yizhak T. Sabba ,  Seokmin Yun ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Dragan Podlesnik

发明人： Yizhak T. Sabba ,  Seokmin Yun ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Dragan Podlesnik

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.

摘要翻译： 从基材表面去除颗粒污染物的设备和方法包括在表面上涂覆一层粘弹性材料。 粘弹性材料被涂覆为薄膜并呈现出显着的液体特性。 外力施加到涂覆有粘弹性材料的表面的第一区域，使得涂覆有粘弹性材料的表面的第二区域基本上不受施加的力。 施加力比粘弹性材料的固有时间短的持续时间，以获得粘弹性材料的固体特性。 具有固体样特性的粘弹性材料至少部分地与存在于表面上的至少一些颗粒污染物相互作用。 粘弹性材料与至少一些颗粒污染物一起从表面的第一区域去除，而粘弹性材料呈现出固体状特征。

公开(公告)号：US07329321B2

公开(公告)日：2008-02-12

申请号：US11061944

申请日：2005-02-17

申请人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

发明人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

IPC分类号： B08B1/02

CPC分类号： H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。