Invention Grant
US06705930B2 System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques 有权
使用减小的表面积抛光垫和可变部分焊盘 - 晶片重叠技术来研磨和平坦化半导体晶片的系统和方法

  • Patent Title: System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
  • Patent Title (中): 使用减小的表面积抛光垫和可变部分焊盘 - 晶片重叠技术来研磨和平坦化半导体晶片的系统和方法
  • Application No.: US09754480
    Application Date: 2001-01-04
  • Publication No.: US06705930B2
    Publication Date: 2004-03-16
  • Inventor: John M. BoydYehiel GotkisRod Kistler
  • Applicant: John M. BoydYehiel GotkisRod Kistler
  • Main IPC: B24B2900
  • IPC: B24B2900
System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
Abstract:
A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.
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