公开(公告)号：US06767428B1

公开(公告)日：2004-07-27

申请号：US10029192

申请日：2001-12-20

申请人： Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

发明人： Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

IPC分类号： C23F102

CPC分类号： B24B37/12 ,  B24B21/08 ,  B24B49/16 ,  H01L21/30625

摘要： An invention is provided for a chemical mechanical planarization apparatus. The apparatus includes a cylindrical frame, a polishing membrane attached to an end of the cylindrical frame, and a pad support disposed within the cylindrical frame and below the polishing membrane that is capable of differentially flexing the polishing membrane. The pad support can be air bearing that provides air pressure to the polishing membrane to differentially flex the polishing membrane during a CMP process. In a further aspect, the pad support can be in contact with the polishing membrane, and include mechanical elements that are capable of differentially flexing the polishing membrane during a CMP process. In addition, the apparatus can include a conditioner element disposed above the polishing membrane, and a conditioner pad support disposed below the polishing membrane and the conditioner element, wherein the conditioner element is capable of eroding the polishing membrane.

摘要翻译： 本发明提供一种化学机械平面化装置。 该装置包括圆柱形框架，附接到圆柱形框架的端部的抛光膜，以及设置在圆柱形框架内并且能够使抛光膜差分弯曲的抛光膜下方的垫支撑件。 衬垫支撑件可以是空气轴承，其在CMP工艺期间向抛光膜提供空气压力以差别地弯曲抛光膜。 在另一方面，衬垫支撑件可以与抛光膜接触，并且包括在CMP工艺期间能够使抛光膜差分弯曲的机械元件。 此外，该装置可以包括设置在抛光膜上方的调理元件，以及设置在抛光膜和调理元件下方的调节垫支撑件，其中调理元件能够侵蚀抛光膜。

公开(公告)号：US07033250B2

公开(公告)日：2006-04-25

申请号：US10882935

申请日：2004-06-30

申请人： Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

发明人： Yehiel Gotkis ,  Aleksandar Owczarz ,  Rod Kistler

IPC分类号： B24B1/00

CPC分类号： B24B37/12 ,  B24B21/08 ,  B24B49/16 ,  H01L21/30625

摘要： An invention is provided for a chemical mechanical planarization apparatus. The apparatus includes a cylindrical frame, a polishing membrane attached to an end of the cylindrical frame, and a pad support disposed within the cylindrical frame and below the polishing membrane that is capable of differentially flexing the polishing membrane. The pad support can be air bearing that provides air pressure to the polishing membrane to differentially flex the polishing membrane during a CMP process. In a further aspect, the pad support can be in contact with the polishing membrane, and include mechanical elements that are capable of differentially flexing the polishing membrane during a CMP process. In addition, the apparatus can include a conditioner element disposed above the polishing membrane, and a conditioner pad support disposed below the polishing membrane and the conditioner element, wherein the conditioner element is capable of eroding the polishing membrane.

摘要翻译： 本发明提供一种化学机械平面化装置。 该装置包括圆柱形框架，附接到圆柱形框架的端部的抛光膜，以及设置在圆柱形框架内并且能够使抛光膜差分弯曲的抛光膜下方的垫支撑件。 衬垫支撑件可以是空气轴承，其在CMP工艺期间向抛光膜提供空气压力以差别地弯曲抛光膜。 在另一方面，衬垫支撑件可以与抛光膜接触，并且包括在CMP工艺期间能够使抛光膜差分弯曲的机械元件。 此外，该装置可以包括设置在抛光膜上方的调理元件，以及设置在抛光膜和调理元件下方的调节垫支撑件，其中调理元件能够侵蚀抛光膜。

公开(公告)号：US06340326B1

公开(公告)日：2002-01-22

申请号：US09493978

申请日：2000-01-28

申请人： Rod Kistler ,  Yehiel Gotkis

发明人： Rod Kistler ,  Yehiel Gotkis

IPC分类号： B23B2900

CPC分类号： B24B53/017 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

摘要： A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

摘要翻译： 用于抛光半导体晶片的系统和方法包括可移动的抛光垫，其可相对于半导体晶片以多个部分重叠的构造定位。 与晶片共面并相邻设置的衬垫修整组件为不与晶片接触的抛光垫的一部分提供原位衬垫调节。 该方法包括相对于晶片径向移动抛光垫的步骤。

公开(公告)号：US06808442B1

公开(公告)日：2004-10-26

申请号：US10027947

申请日：2001-12-20

申请人： David Wei ,  Yehiel Gotkis ,  Aleksander Owczarz ,  John M. Boyd ,  Rod Kistler

发明人： David Wei ,  Yehiel Gotkis ,  Aleksander Owczarz ,  John M. Boyd ,  Rod Kistler

IPC分类号： B24B100

CPC分类号： B24B37/20 ,  B24B21/20

摘要： An invention is provided for removal rate profile manipulation during a CMP process. An apparatus of the embodiments of the present invention includes an actuator capable of vertical movement perpendicular to a polishing surface of a polishing pad. The actuator is further capable of flexing the polishing pad independently of a pad support device. Also included in the apparatus is an actuator control mechanism that is in communication with the actuator. The actuator control mechanism is capable of controlling an amount of vertical movement of the actuator, allowing the actuator to provide local flexing of the polishing pad to achieve a particular removal rate profile. The actuator can also be capable of horizontal movement parallel to the polishing surface of the polishing pad.

摘要翻译： 提供了一种用于在CMP处理期间的去除速率轮廓操作的发明。 本发明的实施例的装置包括能够垂直于抛光垫的抛光表面垂直运动的致动器。 致动器还能够独立于衬垫支撑装置使抛光垫挠曲。 该装置中还包括与致动器连通的致动器控制机构。 致动器控制机构能够控制致动器的垂直运动量，从而允许致动器提供抛光垫的局部弯曲以实现特定的去除速率曲线。 致动器还能够平行于抛光垫的抛光表面的水平移动。

公开(公告)号：US06869337B2

公开(公告)日：2005-03-22

申请号：US10770599

申请日：2004-02-03

申请人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

发明人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

IPC分类号： B24B37/04 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

摘要： A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

摘要翻译： 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：US06705930B2

公开(公告)日：2004-03-16

申请号：US09754480

申请日：2001-01-04

申请人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

发明人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

IPC分类号： B24B2900

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

摘要： A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

摘要翻译： 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：US06729943B2

公开(公告)日：2004-05-04

申请号：US10025379

申请日：2001-12-18

申请人： Rod Kistler ,  Yehiel Gotkis

发明人： Rod Kistler ,  Yehiel Gotkis

IPC分类号： B24B2900

CPC分类号： B24B53/017 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

摘要： A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

摘要翻译： 用于抛光半导体晶片的系统和方法包括可移动的抛光垫，其可相对于半导体晶片以多个部分重叠的构造定位。 与晶片共面并相邻设置的衬垫修整组件为不与晶片接触的抛光垫的一部分提供原位衬垫调节。 该方法包括相对于晶片径向移动抛光垫的步骤。

公开(公告)号：US06776695B2

公开(公告)日：2004-08-17

申请号：US09747828

申请日：2000-12-21

申请人： Alek Owczarz ,  John Boyd ,  Rod Kistler

发明人： Alek Owczarz ,  John Boyd ,  Rod Kistler

IPC分类号： B24B100

CPC分类号： B24B37/32 ,  B24B21/04

摘要： An invention is disclosed for improving edge performance in a chemical mechanical polishing process is disclosed. The system includes a wafer head disposed above a wafer, where the wafer head includes a first active retaining ring capable of extension and retraction. Below the wafer head is a polishing belt, and disposed below the polishing belt is a platen having a second active retaining ring capable of extension and retraction. During operation the first active retaining ring and the second active retaining ring can be controlled to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.

摘要翻译： 公开了一种用于改善化学机械抛光工艺中的边缘性能的发明。 该系统包括设置在晶片上方的晶片头，其中晶片头包括能够延伸和缩回的第一主动保持环。 在晶片头下方是抛光带，并且在抛光带下方设置有具有能够延伸和缩回的第二主动保持环的压板。 在操作期间，可以控制第一主动保持环和第二主动保持环以提供抛光带的位置控制，从而调整和控制在晶片边缘处的去除速率。

公开(公告)号：US06607425B1

公开(公告)日：2003-08-19

申请号：US09747845

申请日：2000-12-21

申请人： Rod Kistler ,  John Boyd ,  Alek Owczarz

发明人： Rod Kistler ,  John Boyd ,  Alek Owczarz

IPC分类号： B24B100

CPC分类号： B24B37/16 ,  B24B21/08 ,  B24B37/30

摘要： An invention is disclosed for improved performance in a CMP process using a pressurized membrane as a replacement for a platen air bearing. In one embodiment, a platen for improving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process.

摘要翻译： 公开了一种用于在使用加压膜作为压板空气轴承的替代物的CMP工艺中改善性能的发明。 在一个实施例中，公开了一种用于提高CMP应用中的性能的压板。 压板包括设置在压板上方的膜和设置在膜下方的多个环形气囊，其中环形气囊能够在膜上施加力。 以这种方式，在CMP过程中提供了区域控制。

公开(公告)号：US06913521B2

公开(公告)日：2005-07-05

申请号：US10874415

申请日：2004-06-22

申请人： Alek Owczarz ,  John Boyd ,  Rod Kistler

发明人： Alek Owczarz ,  John Boyd ,  Rod Kistler

IPC分类号： B24B21/04 ,  B24B37/32 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/32 ,  B24B21/04

摘要： An invention improves edge performance in chemical mechanical polishing processes. A method operation provides a wafer head above a wafer. The wafer head includes a first active retaining ring capable of extension and retraction. Another operation provides a polishing belt below the wafer head, and provides below the polishing belt a platen having a second active retaining ring capable of extension and retraction. Another operation controls positions of the first active retaining ring and the second active retaining ring to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.

摘要翻译： 一种发明改善了化学机械抛光工艺中的边缘性能。 方法操作在晶片上方提供晶片头。 晶片头包括能够延伸和缩回的第一主动保持环。 另一个操作提供在晶片头下方的抛光带，并且在抛光带的下方提供具有能够延伸和缩回的第二主动保持环的压板。 另一个操作控制第一主动保持环和第二主动保持环的位置，以提供抛光带的位置控制，从而调节和控制晶片边缘的去除速率。