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公开(公告)号:US12142348B2
公开(公告)日:2024-11-12
申请号:US18460413
申请日:2023-09-01
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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公开(公告)号:US12094553B2
公开(公告)日:2024-09-17
申请号:US17556363
申请日:2021-12-20
Applicant: Rambus Inc.
Inventor: Yohan U. Frans , Wayne F. Ellis , Akash Bansal
IPC: G11C7/22 , G01R23/02 , G06F13/16 , G11C8/18 , G11C29/02 , G11C29/50 , H03L1/02 , G01R23/15 , G01R35/00 , G06F1/08 , G06F1/12 , G06F11/16 , G11C7/04
CPC classification number: G11C29/50012 , G01R23/02 , G06F13/1689 , G11C7/22 , G11C7/222 , G11C7/225 , G11C8/18 , G11C29/023 , G11C29/028 , H03L1/02 , G01R23/15 , G01R35/005 , G06F1/08 , G06F1/12 , G06F11/1604 , G11C7/04 , G11C2207/2254
Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.
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公开(公告)号:US11783879B2
公开(公告)日:2023-10-10
申请号:US17531151
申请日:2021-11-19
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
CPC classification number: G11C8/12 , G11C5/02 , G11C5/04 , G11C5/06 , G11C5/063 , G11C7/1012 , G11C7/1045 , G11C8/18 , H01L24/49 , H01L25/0657 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48095 , H01L2224/48227 , H01L2224/48471 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2225/0651 , H01L2924/00012 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/15311 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48227 , H01L2924/00012 , H01L2224/48095 , H01L2924/00014 , H01L2924/00014 , H01L2224/45099 , H01L2224/49171 , H01L2224/48227 , H01L2924/00 , H01L2224/49171 , H01L2224/48471 , H01L2924/00 , H01L2224/49171 , H01L2224/49433 , H01L2924/00 , H01L2924/181 , H01L2924/00012
Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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公开(公告)号:US11621030B2
公开(公告)日:2023-04-04
申请号:US17568656
申请日:2022-01-04
Applicant: Rambus Inc.
Inventor: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC: G11C11/34 , G11C11/406 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C29/02 , G06F1/3234 , G11C11/4074
Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US20200294577A1
公开(公告)日:2020-09-17
申请号:US16825247
申请日:2020-03-20
Applicant: Rambus Inc.
Inventor: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC: G11C11/406 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C29/02 , G06F1/3234 , G11C11/4074
Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US10135646B2
公开(公告)日:2018-11-20
申请号:US15827777
申请日:2017-11-30
Applicant: Rambus Inc.
Inventor: Hae-Chang Lee , Brian S. Leibowitz , Jade M. Kizer , Thomas H. Greer , Akash Bansal
Abstract: A receiver includes a continuous-time equalizer, a decision-feedback equalizer (DFE), data and error sampling logic, and an adaptation engine. The receiver corrects for inter-symbol interference (ISI) associated with the most recent data symbol (first post cursor ISI) by establishing appropriate equalization settings for the continuous-time equalizer based upon a measure of the first-post-cursor ISI.
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公开(公告)号:US20180152327A1
公开(公告)日:2018-05-31
申请号:US15827777
申请日:2017-11-30
Applicant: Rambus Inc.
Inventor: Hae-Chang Lee , Brian S. Leibowitz , Jade M. Kizer , Thomas H. Greer , Akash Bansal
CPC classification number: H04L25/03159 , H04B1/123 , H04L25/03057 , H04L25/0307 , H04L25/03885 , H04L2025/03356 , H04L2025/03636
Abstract: A receiver includes a continuous-time equalizer, a decision-feedback equalizer (DFE), data and error sampling logic, and an adaptation engine. The receiver corrects for inter-symbol interference (ISI) associated with the most recent data symbol (first post cursor ISI) by establishing appropriate equalization settings for the continuous-time equalizer based upon a measure of the first-post-cursor ISI.
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公开(公告)号:US09886993B2
公开(公告)日:2018-02-06
申请号:US15332785
申请日:2016-10-24
Applicant: Rambus Inc.
Inventor: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC: G11C5/14 , G11C11/406 , G11C11/4074
CPC classification number: G11C11/40615 , G06F1/3234 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C11/4074 , G11C29/022 , G11C29/028
Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US09860089B2
公开(公告)日:2018-01-02
申请号:US15208332
申请日:2016-07-12
Applicant: Rambus Inc.
Inventor: Hae-Chang Lee , Brian S. Leibowitz , Jade M. Kizer , Thomas H. Greer , Akash Bansal
CPC classification number: H04L25/03159 , H04B1/123 , H04L25/03057 , H04L25/0307 , H04L25/03885 , H04L2025/03356 , H04L2025/03636
Abstract: A receiver includes a continuous-time equalizer, a decision-feedback equalizer (DFE), data and error sampling logic, and an adaptation engine. The receiver corrects for inter-symbol interference (ISI) associated with the most recent data symbol (first post cursor ISI) by establishing appropriate equalization settings for the continuous-time equalizer based upon a measure of the first-post-cursor ISI.
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公开(公告)号:US09818463B2
公开(公告)日:2017-11-14
申请号:US15390681
申请日:2016-12-26
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely K. Tsern , Brian S. Leibowitz , Wayne Frederick Ellis , Akash Bansal , John Welsford Brooks , Kishore Ven Kasamsetty
CPC classification number: G11C8/18 , G06F13/161 , G06F13/1647 , G06F13/1657 , G06F13/4234 , G11C5/02 , G11C5/04 , G11C7/10 , G11C7/1072 , G11C29/023 , G11C29/028 , G11C2207/2254
Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.
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