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公开(公告)号：US20180197753A1
公开(公告)日：2018-07-12
申请号：US15915746
申请日：2018-03-08
IPC分类号： H01L21/48 , H01L23/00 , H01L21/768 , H01L23/532
CPC分类号： H01L21/4817 , H01L21/76852 , H01L23/3121 , H01L23/525 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2221/1078 , H01L2224/02166 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/04042 , H01L2224/05007 , H01L2224/05008 , H01L2224/05075 , H01L2224/05548 , H01L2224/05664 , H01L2224/0612 , H01L2224/131 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45644 , H01L2224/45664 , H01L2224/48247 , H01L2224/48465 , H01L2924/014 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.
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公开(公告)号：US20160379946A1
公开(公告)日：2016-12-29
申请号：US14891319
申请日：2014-11-13
发明人： Kazuyoshi MAEKAWA , Yuichi KAWANO
IPC分类号： H01L23/00
CPC分类号： H01L24/02 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/02166 , H01L2224/02181 , H01L2224/02185 , H01L2224/0219 , H01L2224/02331 , H01L2224/0235 , H01L2224/02373 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/0346 , H01L2224/03462 , H01L2224/03466 , H01L2224/0347 , H01L2224/035 , H01L2224/03614 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05007 , H01L2224/05008 , H01L2224/05025 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05176 , H01L2224/0518 , H01L2224/05181 , H01L2224/05184 , H01L2224/05548 , H01L2224/05566 , H01L2224/05567 , H01L2224/05664 , H01L2224/2919 , H01L2224/32225 , H01L2224/4502 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/48095 , H01L2224/48227 , H01L2224/48228 , H01L2224/48247 , H01L2224/48465 , H01L2224/48664 , H01L2224/48864 , H01L2224/73265 , H01L2924/00014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01046 , H01L2924/04941 , H01L2924/07025 , H01L2924/10253 , H01L2924/1306 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/01008
摘要： A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.
摘要翻译： 半导体器件包括：形成在多个布线层的最上层中的焊盘电极9a; 在焊盘电极9a上具有开口11a的基底绝缘膜11; 形成在基底绝缘膜11上的贱金属膜UM; 形成在基底金属膜UM上的再分布线RM; 和形成为覆盖再分配线RM的上表面和侧面的帽金属膜CM。 另外，在再分配线RM外部的区域中，由不同于再分配线RM的材料制成的贱金属膜UM和由再分配线RM不同的材料制成的帽金属膜CM形成在盖 形成在再分配线路RM和基底绝缘膜11的侧面上的金属膜CM和基底金属膜UM和盖金属膜CM在再分配线路RM外部的区域中彼此直接接触。
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公开(公告)号：US20160181184A1
公开(公告)日：2016-06-23
申请号：US14943900
申请日：2015-11-17
IPC分类号： H01L23/495 , H01L21/48
CPC分类号： H01L21/4817 , H01L21/76852 , H01L23/3121 , H01L23/525 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2221/1078 , H01L2224/02166 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/04042 , H01L2224/05007 , H01L2224/05008 , H01L2224/05075 , H01L2224/05548 , H01L2224/05664 , H01L2224/0612 , H01L2224/131 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45644 , H01L2224/45664 , H01L2224/48247 , H01L2224/48465 , H01L2924/014 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.
摘要翻译： 本发明使得可以提高半导体器件的可靠性。 半导体器件在半导体衬底上具有形成在多个布线层的最上层的焊盘电极，在焊盘电极上具有开口的表面保护膜，在该表面保护膜上形成再分配线，并具有 上表面和侧表面，侧壁阻挡膜，其包括覆盖侧表面并暴露再分布线的上表面的绝缘膜，以及覆盖再分布线的上表面的帽金属膜。 然后再分配线的上表面和侧表面被盖金属膜或侧壁阻挡膜覆盖，并且帽金属膜和侧壁阻挡膜具有重叠部分。
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