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    MEMORY STORAGE DEVICE AND POWER MANAGEMENT METHOD THEREOF
    1.
    发明申请
    MEMORY STORAGE DEVICE AND POWER MANAGEMENT METHOD THEREOF 有权

    公开(公告)号：US20170329381A1

    公开(公告)日：2017-11-16

    申请号：US15210905

    申请日：2016-07-15

    Applicant: PHISON ELECTRONICS CORP.

    Inventor： Zeh-Yang Chew ,  Shou-Chih Lee ,  Po-Chun Hsieh ,  Yun-Chieh Chen ,  I-Chung Tsai

    IPC: G06F1/30

    CPC classification number: G06F1/30 ,  G06F1/263 ,  G06F1/3203 ,  G06F1/3275 ,  G11C5/14 ,  G11C29/021

    Abstract: A memory storage device having a rewritable non-volatile memory module, a first connection interface unit, a second connection interface unit, a power management circuit and a memory control circuit unit is provided. When an external power supply device is electrically connected to the second connection interface unit, the power management circuit receives a second power supply voltage from the external power supply device via the second connection interface unit, supplies an operation voltage to the rewritable non-volatile memory module and the memory control circuit unit and supplies the second power supply voltage to a host device. When the external power supply device is electrically disconnected with the second connection interface unit, the power management circuit receives a first power supply voltage from the host device via the first connection interface unit and supplies the operation voltage to the memory control circuit unit and the rewritable non-volatile memory module.

    Non-volatile memory storage apparatus, memory controller and data storing method
    2.
    发明授权
    Non-volatile memory storage apparatus, memory controller and data storing method 有权
    非易失性存储器存储装置，存储器控制器和数据存储方法

    公开(公告)号：US08837248B2

    公开(公告)日：2014-09-16

    申请号：US13772363

    申请日：2013-02-21

    Applicant: Phison Electronics Corp.

    Inventor： Hsiang-Hsiung Yu ,  Ta-Chuan Wei ,  Yun-Chieh Chen ,  Yu-Chung Shen

    IPC: G11C16/10 ,  G06F12/02 ,  G06F3/06 ,  G11C5/14 ,  G11C16/30 ,  G06F12/00

    CPC classification number: G06F12/00 ,  G06F3/0614 ,  G06F3/0656 ,  G06F3/0658 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7207 ,  G11C5/143 ,  G11C16/10 ,  G11C16/30 ,  Y02D10/13

    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.

    Abstract translation: 提供一种具有连接器，能量存储电路，功率调节器和电源电路，非易失性存储器模块，存储器控制器和缓冲存储器的非易失性存储器存储装置。 功率调节器和电源电路被配置为将来自能量存储电路的输出电压变换为用于非易失性存储器模块的第一电压和用于存储器控制器和缓冲存储器的第二电压。 存储器控制器被配置为当接收到指示输入电压连续小于预定电压达预定时间段的检测信号或者接收到一个或多个存储器时，将临时存储在缓冲存储器中的数据以特殊写入模式写入非易失性存储器模块 检测信号，指示连接器的不活动状态或接收来自主机系统的挂起模式信号，热复位信号或热复位信号。

    NON-VOLATILE MEMORY STORAGE APPARATUS, MEMORY CONTROLLER AND DATA STORING METHOD
    4.
    发明申请
    NON-VOLATILE MEMORY STORAGE APPARATUS, MEMORY CONTROLLER AND DATA STORING METHOD 审中-公开
    非易失存储器，存储控制器和数据存储方法

    公开(公告)号：US20140297936A1

    公开(公告)日：2014-10-02

    申请号：US14306240

    申请日：2014-06-17

    Applicant: PHISON ELECTRONICS CORP.

    Inventor： Hsiang-Hsiung Yu ,  Ta-Chuan Wei ,  Yun-Chieh Chen ,  Yu-Chung Shen

    IPC: G06F12/02

    CPC classification number: G06F12/00 ,  G06F3/0614 ,  G06F3/0656 ,  G06F3/0658 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7207 ,  G11C5/143 ,  G11C16/10 ,  G11C16/30 ,  Y02D10/13

    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.

    Abstract translation: 提供一种具有连接器，能量存储电路，功率调节器和电源电路，非易失性存储器模块，存储器控制器和缓冲存储器的非易失性存储器存储装置。 功率调节器和电源电路被配置为将来自能量存储电路的输出电压变换为用于非易失性存储器模块的第一电压和用于存储器控制器和缓冲存储器的第二电压。 存储器控制器被配置为当接收到指示输入电压连续小于预定电压达预定时间段的检测信号或者接收到一个或多个存储器时，将临时存储在缓冲存储器中的数据以特殊写入模式写入非易失性存储器模块 检测信号，指示连接器的不活动状态或接收来自主机系统的挂起模式信号，热复位信号或热复位信号。

    CHANNEL SWITCHING DEVICE, MEMORY STORAGE DEVICE AND CHANNEL SWITCHING METHOD
    5.
    发明申请
    CHANNEL SWITCHING DEVICE, MEMORY STORAGE DEVICE AND CHANNEL SWITCHING METHOD 审中-公开

    公开(公告)号：US20180165241A1

    公开(公告)日：2018-06-14

    申请号：US15429175

    申请日：2017-02-10

    Applicant: PHISON ELECTRONICS CORP.

    Inventor： Wei-Ting Wei ,  Wei-Yung Chen ,  Yun-Chieh Chen ,  Ta-Chuan Wei

    IPC: G06F13/40 ,  G06F13/42

    CPC classification number: G06F13/4022 ,  G06F13/4282

    Abstract: A channel switching device, a memory storage device and a channel switching method are provided. The channel switching device includes a signal analysis module and a switch module. The signal analysis module is configured to analyze non-power signal from at least one of a plurality of connection interface units of the memory storage device. The switch module is configured to turn on a first channel coupled to a first connection interface unit among the connection interface units of the memory storage device according to an analysis result of the non-power signal, where the first channel which is turned on is for receiving first input signal from the first connection interface unit or transmitting first output signal to the first connection interface unit. Therefore, a probability of mistakenly enabling or disabling a specific connection interface unit of a memory storage device can be reduced.

    NON-VOLATILE MEMORY STORAGE APPARATUS, MEMORY CONTROLLER AND DATA STORING METHOD
    7.
    发明申请
    NON-VOLATILE MEMORY STORAGE APPARATUS, MEMORY CONTROLLER AND DATA STORING METHOD 有权
    非易失存储器，存储控制器和数据存储方法

    公开(公告)号：US20130159641A1

    公开(公告)日：2013-06-20

    申请号：US13772363

    申请日：2013-02-21

    Applicant: Phison Electronics Corp.

    Inventor： Hsiang-Hsiung Yu ,  Ta-Chuan Wei ,  Yun-Chieh Chen ,  Yu-Chung Shen

    IPC: G06F12/00

    CPC classification number: G06F12/00 ,  G06F3/0614 ,  G06F3/0656 ,  G06F3/0658 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7207 ,  G11C5/143 ,  G11C16/10 ,  G11C16/30 ,  Y02D10/13

    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.

    Abstract translation: 提供一种具有连接器，能量存储电路，功率调节器和电源电路，非易失性存储器模块，存储器控制器和缓冲存储器的非易失性存储器存储装置。 功率调节器和电源电路被配置为将来自能量存储电路的输出电压变换为用于非易失性存储器模块的第一电压和用于存储器控制器和缓冲存储器的第二电压。 存储器控制器被配置为当接收到指示输入电压连续小于预定电压达预定时间段的检测信号或者接收到一个或多个存储器时，将临时存储在缓冲存储器中的数据以特殊写入模式写入非易失性存储器模块 检测信号，指示连接器的不活动状态或接收来自主机系统的挂起模式信号，热复位信号或热复位信号。

    Memory storage device and power management method thereof
    8.
    发明授权
    Memory storage device and power management method thereof 有权

    公开(公告)号：US09886071B2

    公开(公告)日：2018-02-06

    申请号：US15210905

    申请日：2016-07-15

    Applicant: PHISON ELECTRONICS CORP.

    Inventor： Zeh-Yang Chew ,  Shou-Chih Lee ,  Po-Chun Hsieh ,  Yun-Chieh Chen ,  I-Chung Tsai

    IPC: G06F1/26 ,  G06F1/30 ,  G06F1/32

    CPC classification number: G06F1/30 ,  G06F1/263 ,  G06F1/3203 ,  G06F1/3275 ,  G11C5/14 ,  G11C29/021

    Abstract: A memory storage device having a rewritable non-volatile memory module, a first connection interface unit, a second connection interface unit, a power management circuit and a memory control circuit unit is provided. When an external power supply device is electrically connected to the second connection interface unit, the power management circuit receives a second power supply voltage from the external power supply device via the second connection interface unit, supplies an operation voltage to the rewritable non-volatile memory module and the memory control circuit unit and supplies the second power supply voltage to a host device. When the external power supply device is electrically disconnected with the second connection interface unit, the power management circuit receives a first power supply voltage from the host device via the first connection interface unit and supplies the operation voltage to the memory control circuit unit and the rewritable non-volatile memory module.

    Memory storage device, memory control circuit unit and power supply method
    10.
    发明授权
    Memory storage device, memory control circuit unit and power supply method 有权
    存储器，存储器控制电路单元和电源供电方式

    公开(公告)号：US09310869B2

    公开(公告)日：2016-04-12

    申请号：US14462569

    申请日：2014-08-19

    Applicant: PHISON ELECTRONICS CORP.

    Inventor： Chih-Jen Hsu ,  Hsiang-Hsiung Yu ,  Ta-Chuan Wei ,  Yun-Chieh Chen

    IPC: G11C16/30 ,  G06F1/26 ,  G06F13/42

    CPC classification number: G06F1/266 ,  G06F1/20 ,  G06F1/26 ,  G06F13/4221 ,  G11C16/30

    Abstract: A memory storage device, a memory control circuit unit and a power supply method are provided. The power supply method includes: providing a first power voltage to a host interface circuit of the memory storage device; providing a second power voltage to a memory management circuit of the memory storage device; providing a third power voltage to a memory interface circuit of the memory storage device, wherein a reference voltage terminal of the memory interface circuit is coupled to a power input terminal of the memory management circuit. Thus, the overheat problem of the memory storage device due to the voltage conversion may be improved.

    Abstract translation: 提供存储器存储装置，存储器控制电路单元和电源方法。 电源方法包括：向存储器存储装置的主机接口电路提供第一电源电压; 向所述存储器存储设备的存储器管理电路提供第二电源电压; 向所述存储器存储装置的存储器接口电路提供第三电源电压，其中所述存储器接口电路的参考电压端子耦合到所述存储器管理电路的电源输入端子。 因此，可以提高由于电压转换引起的存储器存储装置的过热问题。

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