Invention Grant
- Patent Title: Memory storage device and power management method thereof
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Application No.: US15210905Application Date: 2016-07-15
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Publication No.: US09886071B2Publication Date: 2018-02-06
- Inventor: Zeh-Yang Chew , Shou-Chih Lee , Po-Chun Hsieh , Yun-Chieh Chen , I-Chung Tsai
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW105114852A 20160513
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F1/30 ; G06F1/32

Abstract:
A memory storage device having a rewritable non-volatile memory module, a first connection interface unit, a second connection interface unit, a power management circuit and a memory control circuit unit is provided. When an external power supply device is electrically connected to the second connection interface unit, the power management circuit receives a second power supply voltage from the external power supply device via the second connection interface unit, supplies an operation voltage to the rewritable non-volatile memory module and the memory control circuit unit and supplies the second power supply voltage to a host device. When the external power supply device is electrically disconnected with the second connection interface unit, the power management circuit receives a first power supply voltage from the host device via the first connection interface unit and supplies the operation voltage to the memory control circuit unit and the rewritable non-volatile memory module.
Public/Granted literature
- US20170329381A1 MEMORY STORAGE DEVICE AND POWER MANAGEMENT METHOD THEREOF Public/Granted day:2017-11-16
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