知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.017 秒)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11556040B2

    公开(公告)日：2023-01-17

    申请号：US17054010

    申请日：2019-04-18

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Naoki Fujiwara ,  Yuta Ueda ,  Takahiko Shindo

    IPC分类号： G02F1/21 ,  H01S5/042

    摘要： A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere. By covering the cracks that occur in the insulation film in the production process with the insulation film made of SiO2, SiNX, SiONX or the like, an organic solvent such as acetone or ethanol used in the process can be prevented from seeping in between the insulation film and the organic material through the cracks in the insulation film.

    Tunable DBR Semiconductor Laser
    2.
    发明申请
    Tunable DBR Semiconductor Laser 有权

    公开(公告)号：US20220216674A1

    公开(公告)日：2022-07-07

    申请号：US17610519

    申请日：2019-05-30

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Takahiko Shindo ,  Naoki Fujiwara

    IPC分类号： H01S5/125 ,  H01S5/026

    摘要： A 1.3 μm-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.

    Optical Transmitter and Multi-Wavelength Optical Transmitter
    3.
    发明申请
    Optical Transmitter and Multi-Wavelength Optical Transmitter 有权

    公开(公告)号：US20210234332A1

    公开(公告)日：2021-07-29

    申请号：US15734649

    申请日：2019-05-23

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Takahiko Shindo ,  Naoki Fujiwara ,  Hiroyuki Ishii

    IPC分类号： H01S5/026 ,  H01S5/125 ,  H01S5/042 ,  H01S5/40

    摘要： There is provided an optical transmitter having high optical feedback resistance even at the time of high-output operation and capable of suppressing deterioration of optical waveform quality and transmission characteristics. The optical transmitter includes a DBR laser, an EA modulator, a passive optical waveguide, and an SOA that are monolithically integrated on a same substrate, the DBR laser including an active region where current is injected and optical gain is obtained, and two DBR regions that are formed on opposite ends of the active region, the EA modulator optically modulating laser light from the DBR laser, the passive optical waveguide being for guiding modulated light from the EA modulator, the SOA optically amplifying the modulated light from the passive optical waveguide.

    Semiconductor integrated optics element and production method therefor
    5.
    发明授权
    Semiconductor integrated optics element and production method therefor 有权

    公开(公告)号：US11367997B2

    公开(公告)日：2022-06-21

    申请号：US16978339

    申请日：2019-02-28

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Takahiko Shindo ,  Naoki Fujiwara ,  Kimikazu Sano ,  Hiroyuki Ishii ,  Hideaki Matsuzaki ,  Takashi Yamada ,  Kengo Horikoshi

    IPC分类号： H01S5/026 ,  H01S5/02 ,  H01S5/227 ,  H01S5/40 ,  H01S5/50

    摘要： A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.

    Optical Transmitter
    8.
    发明申请
    Optical Transmitter 有权

    公开(公告)号：US20220149591A1

    公开(公告)日：2022-05-12

    申请号：US17428059

    申请日：2020-01-24

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Shigeru Kanazawa ,  Takahiko Shindo ,  Naoki Fujiwara

    IPC分类号： H01S5/02325 ,  H01S5/0225

    摘要： An optical transmitter capable of significantly suppressing a fluctuation in frequency response characteristics due to a fabrication error in internal wire length while reducing a subcarrier size of a module of the optical transmitter is provided. The optical transmitter includes: a subcarrier on which an RF wiring board, a modulated laser chip, and a terminating resistor are mounted and which has a ground pad on an upper surface thereof; and a wire for electrically connecting at least the RF wiring board and the modulated laser chip to each other, wherein the RF wiring board and the modulated laser chip are arranged in a width direction of the subcarrier, and a length of the wire in an electric path which starts at the RF wiring board, passes through the terminating resistor, and reaches the ground pad is 0.5 to 1.5 mm or an inductance of the wire is 0.4 to 1.2 nH.