公开(公告)号：US20240248319A1

公开(公告)日：2024-07-25

申请号：US18566003

申请日：2021-06-23

申请人： Nippon Telegraph and Telephone Corporation

发明人： Shigeru Kanazawa ,  Yasuhiko Nakanishi ,  Takahiko Shindo ,  Meishin Chin

IPC分类号： G02B27/10 ,  H04J14/02

CPC分类号： G02B27/108 ,  H04J14/02

摘要： Crosstalk between adjacent channels is suppressed when monitoring optical output power. A multi-channel optical module for multiplexing and outputting a plurality of wavelength channels, which includes a plurality of light sources each having a different wavelength, a plurality of collimator lenses coupled to the respective outputs of the plurality of light sources, a beam splitter coupled to an output of each of the plurality of collimator lenses, a plurality of monitor PDs for monitoring optical power branched from the beam splitter, and a plurality of wavelength filters inserted between the beam splitter and each of the plurality of monitor PDs and each wavelength filter transmitting only the wavelength of the light source coupled by the beam splitter.

公开(公告)号：US20230283046A1

公开(公告)日：2023-09-07

申请号：US18040763

申请日：2020-08-20

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takahiko Shindo ,  Meishin Chin ,  Shigeru Kanazawa

IPC分类号： H01S5/10 ,  H01S5/12 ,  H01S5/026

CPC分类号： H01S5/1003 ,  H01S5/12 ,  H01S5/026

摘要： Provided is a semiconductor chip that can reduce the man-hours for mounting on an optical module, a subcarrier, or the like, and reducing the dedicated area of the subcarrier or the like. The semiconductor chip includes a waveguide that is terminated inside at an output end portion from which light is emitted, without contacting an emission end face, and a window region made of a bulk semiconductor and disposed between the waveguide and the emission end face, wherein the semiconductor chip is provided with an open groove formed in the output end portion so that the emission end face is a side wall formed by etching.

公开(公告)号：US20230136090A1

公开(公告)日：2023-05-04

申请号：US17915416

申请日：2020-03-31

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tomonari Sato ,  Takahiko Shindo ,  Yuta Ueda

IPC分类号： G02B6/13

摘要： An optical waveguide is an optical waveguide including a semiconductor quantum well structure, the optical waveguide including a first region in which the semiconductor quantum well structure is not disordered and a second region in which the semiconductor quantum well structure is disordered. The first region has a first bandgap wavelength, the second region has a second bandgap wavelength, and a region in which the semiconductor quantum well structure is disordered in such a manner that a bandgap wavelength continuously decreases from the first bandgap wavelength to the second bandgap wavelength is provided between the first region and the second region.

公开(公告)号：US20220239066A1

公开(公告)日：2022-07-28

申请号：US17618789

申请日：2019-06-17

申请人： Nippon Telegraph and Telephone Corporation

发明人： Naoki Fujiwara ,  Takahiko Shindo ,  Shigeru Kanazawa ,  Meishin Chin

IPC分类号： H01S5/12 ,  H01S5/227 ,  H01S5/16 ,  G02B6/42

摘要： Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.

公开(公告)号：US20220149591A1

公开(公告)日：2022-05-12

申请号：US17428059

申请日：2020-01-24

申请人： Nippon Telegraph and Telephone Corporation

发明人： Shigeru Kanazawa ,  Takahiko Shindo ,  Naoki Fujiwara

IPC分类号： H01S5/02325 ,  H01S5/0225

摘要： An optical transmitter capable of significantly suppressing a fluctuation in frequency response characteristics due to a fabrication error in internal wire length while reducing a subcarrier size of a module of the optical transmitter is provided. The optical transmitter includes: a subcarrier on which an RF wiring board, a modulated laser chip, and a terminating resistor are mounted and which has a ground pad on an upper surface thereof; and a wire for electrically connecting at least the RF wiring board and the modulated laser chip to each other, wherein the RF wiring board and the modulated laser chip are arranged in a width direction of the subcarrier, and a length of the wire in an electric path which starts at the RF wiring board, passes through the terminating resistor, and reaches the ground pad is 0.5 to 1.5 mm or an inductance of the wire is 0.4 to 1.2 nH.

公开(公告)号：US20220109284A1

公开(公告)日：2022-04-07

申请号：US17428873

申请日：2020-02-07

申请人： Nippon Telegraph and Telephone Corporation

发明人： Meishin Chin ,  Takahiko Shindo

IPC分类号： H01S5/042 ,  H01S5/026 ,  H01S5/343

摘要： There is provided a high-power directly modulated laser in which oscillation of an SOA unit is suppressed. The high-power directly modulated laser includes a directly modulated laser driven by a drive signal to which a modulation signal is applied and a semiconductor optical amplifier (SOA). The high-power directly modulated laser has an optical absorption element between the directly modulated laser and the SOA. The directly modulated laser, the SOA, and the optical absorption element are monolithically integrated on one substrate.

公开(公告)号：US20240031034A1

公开(公告)日：2024-01-25

申请号：US18255819

申请日：2020-12-15

申请人： Nippon Telegraph and Telephone Corporation

发明人： Shigeru Kanazawa ,  Takahiko Shindo ,  Meishin Chin ,  Yasuhiko Nakanishi

IPC分类号： H04B10/564 ,  H04B10/50 ,  H04J14/02

CPC分类号： H04B10/564 ,  H04B10/506 ,  H04J14/0221

摘要： The optical loss of the output light of the first light source transmitted through the optical multiplexer is suppressed. An optical transmitter includes: a first light source; one or more second light sources having mutually different wavelengths and each having a wavelength different from that of the first light source; an optical multiplexer that transmits output light from the first light source from a first end surface to a second end surface facing the first end surface, causes the output light to reflect on a reflecting mirror formed on the second end surface, transmits output light from the second light source through a wavelength filter formed on the first end surface, causes the output light to reflect on the reflecting mirror, and multiplexes the output light; and a first monitor PD for monitoring optical power with a part of the output light from the first light source.

公开(公告)号：US11862935B2

公开(公告)日：2024-01-02

申请号：US17610519

申请日：2019-05-30

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takahiko Shindo ,  Naoki Fujiwara

IPC分类号： H01S5/125 ,  H01S5/026 ,  H01S5/12

CPC分类号： H01S5/125 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/1218

摘要： A 1.3 μm-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.

公开(公告)号：US20220337026A1

公开(公告)日：2022-10-20

申请号：US17760662

申请日：2019-09-26

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takahiko Shindo ,  Meishin Chin ,  Shigeru Kanazawa

IPC分类号： H01S5/026 ,  G02F1/017 ,  H01S5/50 ,  H01S5/34

摘要： In an EADFB laser with an integrated SOA, a new configuration in which deterioration of optical waveform quality is solved or mitigated while taking advantage of characteristics that the same layer structure can be used and the manufacturing process can be simplified is shown. In an optical transmitter of the present disclosure, a carrier density is optimized depending on a light intensity inside the SOA and an amount of carrier consumption. The SOA is electrically separated into a plurality of regions, and a current is injected into each region independently. The divided SOA region is configured so that a length of the SOA region becomes shorter as a region is farther from an incidence end of the SOA. Further, for the divided SOA, an amount of carrier consumption increases as the SOA region is farther from the incidence end, so that a current injection amount is increased.

公开(公告)号：US20210157210A1

公开(公告)日：2021-05-27

申请号：US17054010

申请日：2019-04-18

申请人： Nippon Telegraph and Telephone Corporation

发明人： Naoki Fujiwara ,  Yuta Ueda ,  Takahiko Shindo

IPC分类号： G02F1/21 ,  H01S5/042

摘要： A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere. By covering the cracks that occur in the insulation film in the production process with the insulation film made of SiO2, SiNx, SiONx or the like, an organic solvent such as acetone or ethanol used in the process can be prevented from seeping in between the insulation film and the organic material through the cracks in the insulation film.