Abstract:
A semiconductor memory device comprises a memory cell transistor that includes two active parts each including therein an emitter and a base and showing a negative differential resistance. The collector layer is shared commonly by the two active parts and is connected to a bit line, while the emitters forming the two active parts are connected to respective word lines that form a word line pair. The bit line and the word lines forming the word line pair are biased to realize a bistable operational state in the memory cell transistor to hold the information.
Abstract:
A logic circuit including a resonant-tunneling transistor having a superlattice containing at least one quantum well layer, and a constant current source operatively connected between a base and an emitter of the transistor and supplying a constant current to said base. The transistor has a differential negative-resistance characteristic with at least one resonant point in a relationship between a current flowing in the base and a voltage between the base and emitter, and having at least two stable base current values at both sides of the resonant point on the characteristic, defined by the changeable base.multidot.emitter voltage. By supplying the base.multidot.emitter voltage having an amplitude of at least two amplitudes corresponding to the stable base current values, the transistor holds data corresponding to the base.multidot.emitter voltage.
Abstract:
A variance correction method includes generating a reference current depending on a resistance within a lowpass filter and outputting the reference current to a voltage controlled oscillator, and correcting characteristics of the lowpass filter and a gain of the voltage controlled oscillator based on an output clock of the voltage controlled oscillator.
Abstract:
A spout member including a base portion which is fixed to a bag body, a cylindrical portion which protrudes upward from the base portion, and a sealing portion which seals a front end of the cylindrical portion through a breakable thin portion is disposed between two sheets of film forming the bag body. A sealing chamber accommodating the cylindrical portion and the sealing portion is opened by tearing the two sheets of film along an opening assisting line. An opening assisting plate protruding to at least one of a left side and a right side of the sealing portion is disposed above the opening assisting line. A sandwiching reinforcement seal portion for reinforcing the two sheets of film by sealing inner surfaces thereof is provided between the opening assisting plate and the opening assisting line.
Abstract:
A memory device comprises a row address signal line Ax, a pair of column address signal lines Ay1, Ay2, a standby signal line Sb, a memory cell provided at an area where the row address signal line Ax intersects with the column address signal lines Ay1, Ay2, and a row address signal line driver BD provided on one end of the row address signal line. The row address signal line driver BD comprises a driver transistor BDTr of a double-emitter type, driver transistor BDTr including one collector electrode CBD, and two emitter electrodes of different areas and exhibiting negative differential characteristics. The smaller-area emitter electrode EBD1 is grounded, and the collector electrode CBD is connected to the row address signal line Ax. The driver transistor BDTr constituting the row address signal line driver BD comprises a transistor of the same structure as a transistor Tr of the memory cell, whereby a voltage of the holding state can be set at 0, and a voltage set for writing when the memory device is at a stable operating point S1 or S2 can have equal positive and negative values. Accordingly, the memory device can have a smaller number of devices and take a smaller area, and the memory cells and peripheral circuits can be easily designed.
Abstract:
A selective growth mask having a plurality of openings is formed on a semiconductor substrate. Desired epitaxially grown regions are formed on the openings by controlling the upward epitaxial growth from the openings. Two resonance tunnel barrier diodes are formed on respective separated two epitaxially grown regions and connected together. Thereafter, a tunnel barrier diode is formed on the connected two resonance tunnel barrier diodes to form a composite element having an SRAM function. A number of composite functional elements can be integrally formed on a semiconductor substrate by selective growth and a small number of fine processes.
Abstract:
A vacuum forming process, and an apparatus for carrying out the same, for imparting a predetermined shape to a sheet material. The process includes the steps of placing a thermally softened sheet material onto a molding surface of a mold and evacuating air remaining between the molding surface of the mold and the sheet material, thereby bringing the sheet material into a close contact with the molding surface of the surface of the mold. The vacuum forming process and apparatus is adapted for giving a predetermined shape to a sheet material having a low elongation ratio. In particular, when giving a predetermined shape to the sheet material, part of the sheet material is pressed with a pressing member against the molding surface of the mold, a peripheral portion of the sheet material is held with a holding member, and holding forces exerted by a plurality of holding portions of the holding member are varied in order to control movement amounts of the sheet material resulting from a pressing force of the pressing member. In this manner, a predetermined shape can be given to a sheet material without causing wrinkles thereto, even when the sheet material has a low elongation ratio.
Abstract:
There is an image forming apparatus in which images of a plurality of originals set on the original plate glass are individually exposed, scanned and read, and the read images are synthesized and recorded at arbitrary positions on a recording paper. This apparatus also has a device to record the images on the front and back surfaces of the recording paper. The synthetic recording and the front and back surface recording can be arbitrarily switched and selected. This apparatus is provided with a trimming function to erase unnecessary image portions of the images, a masking function to prevent the shaded portions from being recorded on an paper, and the image shift function to adjust the synthesizing positions of the images on the recording paper for every image. In the serial page copy mode adapted for book images, the masking function is automatically selected and the recording positions on the front and back surfaces of the recording paper are aligned to either one of the right and left sides of the paper, so that the binding margins can be secured on one selected side of the paper. The masking function is released when the serial page copy mode is released.
Abstract:
There is an image forming apparatus in which images of a plurality of originals set on the original plate glass are individually exposed, scanned and read, and the read images are synthesized and recorded at arbitrary positions on a recording paper. This apparatus also has a device to record the images on the front and back surfaces of the recording paper. The synthetic recording and the front and back surface recording can be arbitrarily switched and selected. This apparatus is provided with a trimming function to erase unnecessary image portions of the images, a masking function to prevent the shaded portions from being recorded on the paper, and an image shift function to adjust the synthesizing positions of the images on the recording paper for every image. In the serial page copy mode adapted for book images, the masking function is automatically selected and the recording positions on the front and back surfaces of the recording paper are aligned to either one of the right and left sides of the paper, so that the binding margins can be secured on one selected side of the paper. The masking function is released when the serial page copy mode is released.
Abstract:
A spout member including a base portion which is fixed to a bag body, a cylindrical portion which protrudes upward from the base portion, and a sealing portion which seals a front end of the cylindrical portion through a breakable thin portion is disposed between two sheets of film forming the bag body. A sealing chamber accommodating the cylindrical portion and the sealing portion is opened by tearing the two sheets of film along an opening assisting line. An opening assisting plate protruding to at least one of a left side and a right side of the sealing portion is disposed above the opening assisting line. A sandwiching reinforcement seal portion for reinforcing the two sheets of film by sealing inner surfaces thereof is provided between the opening assisting plate and the opening assisting line.