公开(公告)号：US20160293800A1

公开(公告)日：2016-10-06

申请号：US15182741

申请日：2016-06-15

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC分类号： H01L33/16 ,  C30B9/10 ,  H01L33/00 ,  C30B29/40 ,  H01L33/32 ,  H01L33/06 ,  C30B25/18 ,  C30B19/02

CPC分类号： H01L33/16 ,  C30B9/10 ,  C30B19/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L33/0008 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32

摘要： Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

摘要翻译： 提供了一种适合于以低成本制造大面积发光器件的发光器件复合衬底。 发光器件复合衬底包括由取向多晶氧化铝烧结体构成的衬底和形成在衬底上并具有由半导体单晶晶粒组成的两层或更多层的发光功能层，其中两层或更多层中的每一层具有 在大致垂直于衬底的方向上的单晶结构。

公开(公告)号：US20150376024A1

公开(公告)日：2015-12-31

申请号：US14848842

申请日：2015-09-09

申请人： NGK Insulators, Ltd.

发明人： Jun YOSHIKAWA ,  Katsuhiro IMAI ,  Koichi KONDO ,  Koki KANNO

IPC分类号： C01G9/02 ,  C23C14/34

CPC分类号： C01G9/02 ,  C01P2002/90 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/10 ,  C01P2006/80 ,  C04B35/453 ,  C04B2235/322 ,  C04B2235/3284 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/77 ,  C04B2235/787 ,  C04B2235/788 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414

摘要： Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cm3 or greater.

摘要翻译： 提供一种氧化锌系溅射靶，其能够通过溅射在氧化锌系透明导电膜的形成中抑制电弧化而提高成膜速度。 该氧化锌系溅射靶包括主要包含氧化锌晶粒的氧化锌系烧结体，溅射面的（002）取向度为50％以上，密度为5.30g / cm 3以上 。

公开(公告)号：US20150372191A1

公开(公告)日：2015-12-24

申请号：US14737627

申请日：2015-06-12

申请人： NGK Insulators, Ltd.

发明人： Morimichi WATANABE ,  Katsuhiro IMAI ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI

IPC分类号： H01L33/16 ,  H01L33/00 ,  H01L33/26 ,  H01L33/28 ,  H01L33/32

CPC分类号： H01L33/16 ,  H01L33/0008 ,  H01L33/0083 ,  H01L33/0095 ,  H01L33/26 ,  H01L33/28 ,  H01L33/285 ,  H01L33/325

摘要： Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

摘要翻译： 提供一种面发光器件，其包括由板状取向多晶氧化锌烧结体构成的衬底，设置在衬底上的发光功能层和设置在发光功能层上的电极。 根据本发明，可以廉价地提供发光效率高的面发光装置。

公开(公告)号：US20130263771A1

公开(公告)日：2013-10-10

申请号：US13866185

申请日：2013-04-19

申请人： NGK INSULATORS, LTD.

发明人： Nobuyuki KOBAYASHI ,  Kazuki MAEDA ,  Koichi KONDO ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Jun YOSHIKAWA

IPC分类号： C30B1/04

CPC分类号： C30B1/04 ,  C23C4/12 ,  C23C4/123 ,  C23C24/04 ,  C30B1/00 ,  C30B29/406

摘要： A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.

摘要翻译： 根据本发明的晶体制造方法包括：成膜和结晶步骤，其以预定的单一结晶温度喷涂含有原料组分的原料粉末，以在含有单晶的种子基材上形成含有原料成分的膜 在其中发生单一结晶的原料组分，并且在保持单一结晶温度的同时使包含原料的膜结晶。 在成膜和结晶步骤中，优选单结晶温度为900℃以上。 此外，在成膜和结晶步骤中，原料粉末和种子基材优选为氮化物或氧化物。

公开(公告)号：US20240347604A1

公开(公告)日：2024-10-17

申请号：US18754464

申请日：2024-06-26

申请人： NGK INSULATORS, LTD.

发明人： Kentaro NONAKA ,  Sota MAEHARA ,  Yoshitaka KURAOKA ,  Katsuhiro IMAI

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L21/66 ,  H01L29/207

CPC分类号： H01L29/2003 ,  H01L21/02362 ,  H01L22/26 ,  H01L29/207

摘要： A Group-III element nitride semiconductor substrate includes a first surface and a second surface. A minimum value of a specific resistance in the first surface is 1×107 Ω·cm or more, and the minimum value of the specific resistance in the first surface is 0.01 or more times as large as a maximum value of the specific resistance in the first surface.

公开(公告)号：US20240002997A1

公开(公告)日：2024-01-04

申请号：US18465265

申请日：2023-09-12

申请人： NGK INSULATORS, LTD.

发明人： Kentaro NONAKA ,  Yoshinori ISODA ,  Katsuhiro IMAI

IPC分类号： C23C14/34

CPC分类号： C23C14/3407

摘要： A sputtering target includes a gallium nitride-based crystalline body composed of a plurality of gallium nitride-based monocrystalline grains whose c-axes are orientated in a direction normal to a predetermined surface. The gallium nitride-based crystalline body has a total oxygen concentration of 150 mass ppm or lower, and the gallium nitride-based monocrystalline grains have oxygen concentrations of 2×1017 cm−3 or higher measured by dynamic SIMS method.

公开(公告)号：US20230215969A9

公开(公告)日：2023-07-06

申请号：US17691434

申请日：2022-03-10

申请人： NGK INSULATORS, LTD.

发明人： Masahiro SAKAI ,  Takayuki HIRAO ,  Hirokazu NAKANISHI ,  Mikiya ICHIMURA ,  Takanao SHIMODAIRA ,  Takashi YOSHINO ,  Katsuhiro IMAI ,  Yoshitaka KURAOKA

IPC分类号： H01L33/00 ,  C30B29/38 ,  H01L33/32

CPC分类号： H01L33/0075 ,  C30B29/38 ,  H01L33/0095 ,  H01L33/32

摘要： It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.

公开(公告)号：US20170330749A1

公开(公告)日：2017-11-16

申请号：US15661822

申请日：2017-07-27

申请人： NGK INSULATORS, LTD.

发明人： Takashi YOSHINO ,  Katsuhiro IMAI ,  Masahiro SAKAI

IPC分类号： H01L21/02 ,  C30B7/10 ,  H01L33/00 ,  H01L29/872 ,  H01L29/34 ,  H01L29/20 ,  H01L21/78 ,  C30B29/68 ,  C30B29/40 ,  C30B29/20 ,  C30B25/18 ,  C30B25/04 ,  C30B9/12 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L21/02639 ,  C30B7/105 ,  C30B9/10 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/04 ,  C30B25/18 ,  C30B28/04 ,  C30B28/14 ,  C30B29/20 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02002 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/7806 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/452 ,  H01L29/66212 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/32

摘要： A self-supporting substrate includes a first nitride layer grown by hydride vapor deposition method or ammonothermal method and comprising a nitride of one or more element selected from the group consisting of gallium, aluminum and indium; and a second nitride layer grown by a sodium flux method on the first nitride layer and comprising a nitride of one or more element selected from the group consisting of gallium, aluminum and indium. The first nitride layer includes a plurality of single crystal grains arranged therein and being extended between a pair of main faces of the first nitride layer. The second nitride layer includes a plurality of single crystal grains arranged therein and being extended between a pair of main faces of the second nitride layer. The first nitride layer has a thickness larger than a thickness of the second nitride layer.

公开(公告)号：US20220199854A1

公开(公告)日：2022-06-23

申请号：US17691434

申请日：2022-03-10

申请人： NGK INSULATORS, LTD.

发明人： Masahiro SAKAI ,  Takayuki HIRAO ,  Hirokazu NAKANISHI ,  Mikiya ICHIMURA ,  Takanao SHIMODAIRA ,  Takashi YOSHINO ,  Katsuhiro IMAI ,  Yoshitaka KURAOKA

IPC分类号： H01L33/00 ,  C30B29/38 ,  H01L33/32

摘要： It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.

公开(公告)号：US20180202067A1

公开(公告)日：2018-07-19

申请号：US15920905

申请日：2018-03-14

申请人： NGK INSULATORS, LTD.

发明人： Takayuki HIRAO ,  Makoto IWAI ,  Katsuhiro IMAI ,  Takashi YOSHINO

IPC分类号： C30B19/12 ,  H01L21/02 ,  C30B19/02 ,  C30B29/40 ,  C30B25/18 ,  C30B33/12

CPC分类号： C30B19/12 ,  C30B9/10 ,  C30B19/02 ,  C30B25/18 ,  C30B29/406 ,  C30B33/12 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634

摘要： An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 μm and a width of 5 to 100 μm, and the recesses have a bottom thickness of 2 μm or more and a width of 50 to 500 μm.