公开(公告)号：US20220199854A1

公开(公告)日：2022-06-23

申请号：US17691434

申请日：2022-03-10

申请人： NGK INSULATORS, LTD.

发明人： Masahiro SAKAI ,  Takayuki HIRAO ,  Hirokazu NAKANISHI ,  Mikiya ICHIMURA ,  Takanao SHIMODAIRA ,  Takashi YOSHINO ,  Katsuhiro IMAI ,  Yoshitaka KURAOKA

IPC分类号： H01L33/00 ,  C30B29/38 ,  H01L33/32

摘要： It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.

公开(公告)号：US20200227589A1

公开(公告)日：2020-07-16

申请号：US16826826

申请日：2020-03-23

申请人： NGK INSULATORS, LTD.

发明人： Masahiro SAKAI ,  Shohei OUE ,  Masashi GOTO ,  Takashi YOSHINO

IPC分类号： H01L33/18 ,  H01L33/32 ,  H01L33/54 ,  H01L33/00

摘要： A base substrate includes a supporting substrate, and a base crystal layer provided on a main face of the supporting substrate, composed of a crystal of a group 13 nitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the group 13 nitride, metal of a group 13 element and/or void is present between the raised part and supporting substrate.

公开(公告)号：US20180202067A1

公开(公告)日：2018-07-19

申请号：US15920905

申请日：2018-03-14

申请人： NGK INSULATORS, LTD.

发明人： Takayuki HIRAO ,  Makoto IWAI ,  Katsuhiro IMAI ,  Takashi YOSHINO

IPC分类号： C30B19/12 ,  H01L21/02 ,  C30B19/02 ,  C30B29/40 ,  C30B25/18 ,  C30B33/12

CPC分类号： C30B19/12 ,  C30B9/10 ,  C30B19/02 ,  C30B25/18 ,  C30B29/406 ,  C30B33/12 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634

摘要： An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 μm and a width of 5 to 100 μm, and the recesses have a bottom thickness of 2 μm or more and a width of 50 to 500 μm.

公开(公告)号：US20200227259A1

公开(公告)日：2020-07-16

申请号：US16828417

申请日：2020-03-24

申请人： NGK INSULATORS, LTD.

发明人： Masashi GOTO ,  Masahiro SAKAI ,  Shohei OUE ,  Takashi YOSHINO

IPC分类号： H01L21/02 ,  C30B29/40

摘要： A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

公开(公告)号：US20200067480A1

公开(公告)日：2020-02-27

申请号：US16670462

申请日：2019-10-31

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Masahiko NAMERIKAWA ,  Takashi YOSHINO

IPC分类号： H03H9/02 ,  H03H3/10 ,  H01L41/313 ,  H03H9/05 ,  H03H9/25

摘要： In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

公开(公告)号：US20160293800A1

公开(公告)日：2016-10-06

申请号：US15182741

申请日：2016-06-15

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC分类号： H01L33/16 ,  C30B9/10 ,  H01L33/00 ,  C30B29/40 ,  H01L33/32 ,  H01L33/06 ,  C30B25/18 ,  C30B19/02

CPC分类号： H01L33/16 ,  C30B9/10 ,  C30B19/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L33/0008 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32

摘要： Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

摘要翻译： 提供了一种适合于以低成本制造大面积发光器件的发光器件复合衬底。 发光器件复合衬底包括由取向多晶氧化铝烧结体构成的衬底和形成在衬底上并具有由半导体单晶晶粒组成的两层或更多层的发光功能层，其中两层或更多层中的每一层具有 在大致垂直于衬底的方向上的单晶结构。

公开(公告)号：US20150372191A1

公开(公告)日：2015-12-24

申请号：US14737627

申请日：2015-06-12

申请人： NGK Insulators, Ltd.

发明人： Morimichi WATANABE ,  Katsuhiro IMAI ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI

IPC分类号： H01L33/16 ,  H01L33/00 ,  H01L33/26 ,  H01L33/28 ,  H01L33/32

CPC分类号： H01L33/16 ,  H01L33/0008 ,  H01L33/0083 ,  H01L33/0095 ,  H01L33/26 ,  H01L33/28 ,  H01L33/285 ,  H01L33/325

摘要： Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

摘要翻译： 提供一种面发光器件，其包括由板状取向多晶氧化锌烧结体构成的衬底，设置在衬底上的发光功能层和设置在发光功能层上的电极。 根据本发明，可以廉价地提供发光效率高的面发光装置。

公开(公告)号：US20160172541A1

公开(公告)日：2016-06-16

申请号：US15016722

申请日：2016-02-05

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC分类号： H01L33/32 ,  H01L33/00 ,  C30B29/40 ,  C30B19/12 ,  C30B9/00 ,  C30B25/20 ,  H01L33/16 ,  C30B19/02

CPC分类号： H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

公开(公告)号：US20160047984A1

公开(公告)日：2016-02-18

申请号：US14853144

申请日：2015-09-14

申请人： NGK Insulators, Ltd.

发明人： Jungo KONDO ,  Shoichiro YAMAGUCHI ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI

IPC分类号： G02B6/122 ,  G02B6/124 ,  G02B6/42

CPC分类号： G02B6/1228 ,  G02B6/124 ,  G02B6/4203 ,  G02B6/4206 ,  G02B2006/12059 ,  G02B2006/12097 ,  G02B2006/12107

摘要： An evanescent light generation element for oscillating evanescent light from an optical waveguide to a clad layer, including a 0.1 μm-10 μm thin layer composed of a ferroelectric single crystal or oriented crystal having first and second principal surfaces, and incident side end and exit side end surfaces. A ridge optical waveguide is formed in the thin layer and extends between the incident and exit side end surfaces of the thin layer. At least a pair of grooves is formed on both sides of the ridge optical waveguide in the thin layer and opened at the first principal surface of the thin layer. A clad layer is provided on the first principal surface or the second principal surface. A width of the ridge optical waveguide at the exit side end surface is less than a width of the ridge optical waveguide at the incident side end surface.

摘要翻译： 一种用于将从光波导到包覆层的渐逝光振荡的消逝光发生元件，包括由具有第一和第二主表面的铁电单晶或取向晶体构成的0.1μm-10μm薄层，以及入射侧端部和出射侧 端面。 脊状光波导形成在薄层中并且在薄层的入射侧端和出射侧端面之间延伸。 在薄层的脊状光波导的两侧形成至少一对槽，在薄层的第一主面上开口。 在第一主表面或第二主表面上设置包覆层。 出射侧端面处的脊状光波导的宽度小于入射侧端面处的脊状光波导的宽度。

公开(公告)号：US20210013366A1

公开(公告)日：2021-01-14

申请号：US17034799

申请日：2020-09-28

申请人： NGK INSULATORS, LTD.

发明人： Masahiro SAKAI ,  Takashi YOSHINO ,  Katsuhiro IMAI ,  Yoshitaka KURAOKA

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L33/18 ,  H01L33/32 ,  H01L29/04 ,  H01L29/20 ,  C30B29/40 ,  C30B19/02 ,  C30B28/04 ,  C23C14/08 ,  C23C14/06 ,  C23C14/34 ,  C23C16/34

摘要： A group 13 nitride layer is composed of a polycrystalline group 13 nitride and is constituted by a plurality of monocrystalline particles having a particular crystal orientation approximately in a normal direction. The group 13 nitride comprises gallium nitride, aluminum nitride, indium nitride or the mixed crystal thereof. The group 13 nitride layer includes an upper surface and a bottom surface, and a full width at half maximum of a (1000) plane reflection of X-ray rocking curve on the upper surface is 20000 seconds or less and 1500 seconds or more.