公开(公告)号：US20210234530A1

公开(公告)日：2021-07-29

申请号：US17231429

申请日：2021-04-15

申请人： NGK INSULATORS, LTD.

发明人： Yudai UNO ,  Masashi GOTO ,  Tomoyoshi TAI

IPC分类号： H03H9/02 ,  H03H3/08

摘要： A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of Si(1-x)Ox (0.008≤x≤0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of Si(1-y)Oy (0.008≤y≤0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

公开(公告)号：US20210111698A1

公开(公告)日：2021-04-15

申请号：US17128724

申请日：2020-12-21

申请人： NGK INSULATORS, LTD.

发明人： Yudai UNO ,  Masashi GOTO ,  Tomoyoshi TAI

IPC分类号： H03H9/02 ,  H03H3/08 ,  H01L41/312 ,  H03H9/25

摘要： A bonded body includes: a piezoelectric single crystal substrate; a supporting substrate composed of a single crystal silicon; a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate and having a composition of Si(1-x)Ox (0.008≤x≤0.408); and an amorphous layer provided between the supporting substrate and bonding layer and containing silicon atoms, oxygen atoms and argon atoms. The concentration of the oxygen atoms in an end part of the amorphous layer on a side of the bonding layer is higher than the average concentration of the oxygen atoms in the bonding layer.

公开(公告)号：US20230061055A1

公开(公告)日：2023-03-02

申请号：US18047701

申请日：2022-10-19

申请人： NGK Insulators, Ltd.

发明人： Jungo KONDO ,  Keiichiro ASAI ,  Tomoyoshi TAI

IPC分类号： G02B6/122

摘要： A composite substrate (100) for a photonic crystal element includes: an electro-optical crystal substrate (10) having an electro-optical effect; an optical loss-suppressing and cavity-processing layer (20) arranged on one surface of the electro-optical crystal substrate (10); and a support substrate (30) integrated with the electro-optical crystal substrate (10) through the optical loss-suppressing and cavity-processing layer (20).

公开(公告)号：US20220004030A1

公开(公告)日：2022-01-06

申请号：US17480870

申请日：2021-09-21

申请人： NGK INSULATORS, LTD.

发明人： Yudai UNO ,  Tomoyoshi TAI ,  Jungo KONDO

IPC分类号： G02F1/035

摘要： A composite substrate for an electro-optic element is disclosed. The composite substrate includes: an electro-optic crystal substrate having an electro-optic effect; a low-refractive-index layer being in contact with the electro-optic crystal substrate and having a lower refractive index than the electro-optical crystal substrate; and a support substrate bonded to the low-refractive-index layer at least via a bonding layer. A plurality of interfaces located between the low-refractive-index layer and the support substrate includes at least one rough interface having a roughness that is larger than a roughness of an interface between the electro-optic crystal substrate and the low-refractive-index layer.

公开(公告)号：US20200373905A1

公开(公告)日：2020-11-26

申请号：US16991699

申请日：2020-08-12

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Ryosuke HATTORI

IPC分类号： H03H9/02 ,  H03H3/08 ,  H01L41/312 ,  H03H9/25

摘要： A bonded body includes a supporting substrate, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and an amorphous layer present between the supporting substrate and piezoelectric material substrate. The amorphous layer contains one or more metal element selected from the group consisting of niobium and tantalum, an element constituting the supporting substrate and oxygen element. The concentration of the metal element in the amorphous layer is higher than the concentration of oxygen element and 20 to 65 atom %.

公开(公告)号：US20200067480A1

公开(公告)日：2020-02-27

申请号：US16670462

申请日：2019-10-31

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Masahiko NAMERIKAWA ,  Takashi YOSHINO

IPC分类号： H03H9/02 ,  H03H3/10 ,  H01L41/313 ,  H03H9/05 ,  H03H9/25

摘要： In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

公开(公告)号：US20190007022A1

公开(公告)日：2019-01-03

申请号：US16102209

申请日：2018-08-13

申请人： NGK Insulators, Ltd.

发明人： Masashi GOTO ,  Yudai UNO ,  Keiichiro ASAI ,  Tomoyoshi TAI

IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H3/08 ,  H03H9/05 ,  H03H9/17

摘要： An object is to improve insulation in a bonding layer and to improve a bonding strength of a supporting body and piezoelectric single crystal substrate, in a bonded body having the supporting body made of a polycrystalline material or single crystal material, the piezoelectric single crystal substrate and the bonding layer provided between the supporting body and piezoelectric single crystal substrate.The bonded body includes the supporting body, piezoelectric single crystal substrate and the bonding layer provided between the supporting body and piezoelectric single crystal substrate. The bonding layer has a composition of Si(1-x)Ox (0.008≤x≤0.408).

公开(公告)号：US20230006634A1

公开(公告)日：2023-01-05

申请号：US17930743

申请日：2022-09-09

申请人： NGK Insulators, Ltd.

发明人： Takeshi YAMAMOTO ,  Yudai UNO ,  Hiroyoshi INA ,  Keiichiro ASAI ,  Tomoyoshi TAI

IPC分类号： H03H9/02

摘要： A composite substrate includes: a piezoelectric layer; and a reflective layer arranged on a rear surface side of the piezoelectric layer, wherein the reflective layer includes a high-impedance layer and a low-impedance layer containing silicon oxide, and wherein a ratio of a region of first structures in the high-impedance layer is more than 70%.

公开(公告)号：US20220393094A9

公开(公告)日：2022-12-08

申请号：US17452491

申请日：2021-10-27

申请人： NGK INSULATORS, LTD.

发明人： Yudai UNO ,  Tomoyoshi TAI ,  Keiichiro ASAI ,  Masato NIWA

IPC分类号： H01L41/09 ,  H01L41/187

摘要： A vibrating plate-bonded body includes a supporting substrate composed of silicon, a vibrating plate composed of a highly rigid ceramics and having a thickness of 100 μm or smaller, and a bonding layer between the supporting substrate and vibrating plate, contacting a bonding surface of the vibrating plate and composed of α-Si. The arithmetic average roughness Ra of the bonding surface of the vibrating plate is 0.01 nm or more and 10.0 nm or less, and the pit density of the bonding surface of the vibrating plate is 10 counts or more per 100 μm2.

公开(公告)号：US20220329230A1

公开(公告)日：2022-10-13

申请号：US17851230

申请日：2022-06-28

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Yudai UNO ,  Keiichiro ASAI ,  Ryosuke HATTORI ,  Masato NIWA ,  Masahiko NAMERIKAWA

IPC分类号： H03H9/17 ,  H01L41/047

摘要： A piezoelectric vibrating device includes a piezoelectric layer composed of a bulk piezoelectric material, a lower electrode on a first surface of the piezoelectric layer and a supporting substrate bonded with the lower electrode.