- 专利标题: GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD OF PRODUCING GROUP 13 ELEMENT NITRIDE LAYER
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申请号: US17034799申请日: 2020-09-28
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公开(公告)号: US20210013366A1公开(公告)日: 2021-01-14
- 发明人: Masahiro SAKAI , Takashi YOSHINO , Katsuhiro IMAI , Yoshitaka KURAOKA
- 申请人: NGK INSULATORS, LTD.
- 申请人地址: JP Nagoya-city
- 专利权人: NGK INSULATORS, LTD.
- 当前专利权人: NGK INSULATORS, LTD.
- 当前专利权人地址: JP Nagoya-city
- 优先权: JP2018-064713 20180329
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/02 ; H01L33/18 ; H01L33/32 ; H01L29/04 ; H01L29/20 ; C30B29/40 ; C30B19/02 ; C30B28/04 ; C23C14/08 ; C23C14/06 ; C23C14/34 ; C23C16/34
摘要:
A group 13 nitride layer is composed of a polycrystalline group 13 nitride and is constituted by a plurality of monocrystalline particles having a particular crystal orientation approximately in a normal direction. The group 13 nitride comprises gallium nitride, aluminum nitride, indium nitride or the mixed crystal thereof. The group 13 nitride layer includes an upper surface and a bottom surface, and a full width at half maximum of a (1000) plane reflection of X-ray rocking curve on the upper surface is 20000 seconds or less and 1500 seconds or more.
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