- 专利标题： GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND FUNCTIONAL ELEMENT
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申请号： US18754464申请日： 2024-06-26
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公开(公告)号： US20240347604A1公开(公告)日： 2024-10-17
- 发明人: Kentaro NONAKA , Sota MAEHARA , Yoshitaka KURAOKA , Katsuhiro IMAI
- 申请人： NGK INSULATORS, LTD.
- 申请人地址： JP Nagoya-shi Aichi
- 专利权人： NGK INSULATORS, LTD.
- 当前专利权人： NGK INSULATORS, LTD.
- 当前专利权人地址： JP Nagoya-shi Aichi
- 优先权： JP 22019868 2022.02.10
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/02 ; H01L21/66 ; H01L29/207
摘要：
A Group-III element nitride semiconductor substrate includes a first surface and a second surface. A minimum value of a specific resistance in the first surface is 1×107 Ω·cm or more, and the minimum value of the specific resistance in the first surface is 0.01 or more times as large as a maximum value of the specific resistance in the first surface.
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