公开(公告)号：US10121732B2

公开(公告)日：2018-11-06

申请号：US15784472

申请日：2017-10-16

Applicant: Mitsubishi Electric Corporation

Inventor： Yoshitaka Kimura ,  Yoshitaka Otsubo

IPC: H01L23/14 ,  H01L23/49 ,  H01L23/00 ,  H01L25/18 ,  H01L29/739 ,  H01L29/861

Abstract: A semiconductor device includes: a base plate including a metallic base plate and an insulating film provided on the metallic base plate; a semiconductor chip provided on the base plate; a control board disposed above the semiconductor chip; and a relay terminal connected to a signal electrode of the semiconductor chip through a signal line wire, extending to the control board, and connected to the control board, wherein the relay terminal is directly fixed to the insulating film of the base plate.

公开(公告)号：US09979105B2

公开(公告)日：2018-05-22

申请号：US15145056

申请日：2016-05-03

Applicant: Mitsubishi Electric Corporation

Inventor： Minoru Egusa ,  Hidetoshi Ishibashi ,  Yoshitaka Otsubo ,  Hiroyuki Masumoto ,  Hiroshi Kawata

IPC: H01R12/58 ,  H01L23/053

CPC classification number: H01R12/585 ,  H01L23/053 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/19107

Abstract: A power semiconductor device includes: an outer case; at least one press-fit terminal buried in a top surface of the outer case; and a plurality of supporting portions formed so as to protrude from the top surface of the outer case. A top end of the press-fit terminal protrudes more than top surfaces of the supporting portions from the top surface of the outer case.

公开(公告)号：US09455208B2

公开(公告)日：2016-09-27

申请号：US14821301

申请日：2015-08-07

Applicant: Mitsubishi Electric Corporation

Inventor： Takuya Takahashi ,  Yoshitaka Otsubo

IPC: H01L23/053 ,  H01L23/498 ,  H01L23/36 ,  H01L23/00

CPC classification number: H01L23/053 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/562 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: An insertion vertical electrode region and part of a case-contact horizontal electrode region of an electrode insertion part of an external electrode is inserted and molded in an intra-case insertion region of a housing case. Inserting the case-contact horizontal electrode region, which serves as part of the electrode insertion part, in the intra-case insertion region allows the upper and lower surfaces of the case-contact horizontal electrode region to be in contact with the intra-case insertion region.

Abstract translation: 插入垂直电极区域和外部电极的电极插入部分的壳体 - 接触水平电极区域的一部分插入并模制在壳体的壳体内插入区域中。 作为电极插入部的一部分的壳体接触用水平电极区域插入在壳体内插入区域内，使得壳体接触用水平电极区域的上下表面与壳体内插入接触 地区。

公开(公告)号：US09355999B2

公开(公告)日：2016-05-31

申请号：US14728167

申请日：2015-06-02

Applicant: Mitsubishi Electric Corporation

Inventor： Hiroyuki Masumoto ,  Hiroshi Kawata ,  Manabu Matsumoto ,  Yoshitaka Otsubo

IPC: H01L23/48 ,  H01L25/065 ,  H01L23/29 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498

CPC classification number: H01L25/0655 ,  H01L23/053 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/3675 ,  H01L23/3735 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/562 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes: a substrate having an insulating resin and a metal pattern provided on the insulating resin; a mounted component mounted on the metal pattern; and an epoxy resin encapsulating the metal pattern and the mounted component, wherein a slit is provided in the metal pattern around the mounted component, and the insulating resin exposed from the metal pattern and the epoxy resin are brought into intimate contact with each other in the slit.

Abstract translation: 半导体器件包括：具有绝缘树脂的衬底和设置在绝缘树脂上的金属图案; 安装在金属图案上的安装部件; 以及包封金属图案和安装部件的环氧树脂，其中在安装部件周围的金属图案中设置狭缝，并且从金属图案和环氧树脂露出的绝缘树脂彼此紧密接触 狭缝

公开(公告)号：US09960126B2

公开(公告)日：2018-05-01

申请号：US15430594

申请日：2017-02-13

Applicant: Mitsubishi Electric Corporation

Inventor： Manabu Matsumoto ,  Yoshitaka Otsubo ,  Yasutaka Shimizu

IPC: H01L23/40 ,  H01L23/00 ,  H01L23/367 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/367 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29639 ,  H01L2224/32245 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055

Abstract: According to the present invention, a semiconductor device includes a heat spreader, a semiconductor chip fixed to a mounting surface of the heat spreader via a bonding member and sealing resin that covers the heat spreader and the semiconductor chip, wherein a groove is formed on the mounting surface around the semiconductor chip, a length between the semiconductor chip and the groove is equal to or greater than a depth of the groove, and the bonding member is not provided on at least part of a region of the mounting surface between the semiconductor chip and the groove.

公开(公告)号：US09721861B2

公开(公告)日：2017-08-01

申请号：US14687371

申请日：2015-04-15

Applicant: Mitsubishi Electric Corporation

Inventor： Yoshitaka Otsubo ,  Takuya Takahashi ,  Masaomi Miyazawa ,  Tetsuo Yamashita ,  Tomohiro Hieda ,  Mituharu Tabata

IPC: H05K7/20 ,  H01L23/24 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H01L23/057 ,  H01L23/473

CPC classification number: H01L23/24 ,  H01L23/057 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/49811 ,  H01L2224/48091 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.

公开(公告)号：US10593605B2

公开(公告)日：2020-03-17

申请号：US16188772

申请日：2018-11-13

Applicant: Mitsubishi Electric Corporation

Inventor： Yoshitaka Otsubo ,  Masayuki Ando ,  Kota Ohara ,  Takamasa Oda ,  Takuro Mori

IPC: H01L23/48 ,  H01L23/10 ,  H01L23/053 ,  H01L23/373 ,  H01L23/00

Abstract: A semiconductor package includes: an insulating substrate having a circuit pattern; a semiconductor device provided on the circuit pattern; a case surrounding the semiconductor device on the insulating substrate; an external terminal electrically connecting inside and outside of the case; an inner wire electrically connecting the circuit pattern or the semiconductor device with an inner end portion of the external terminal; a sealing resin sealing the semiconductor device and the inner wire inside the case; and a lid covering an upper surface of the sealing resin, wherein the inner wire includes a fusion portion that fuses when excessive current flows, and the lid includes a scattering prevention part covering the fusion portion while securing a gap between the scattering prevention part and the upper surface of the sealing resin, and is fixed to the upper surface of the sealing resin in a region other than the scattering prevention part.

公开(公告)号：US10366933B2

公开(公告)日：2019-07-30

申请号：US15660994

申请日：2017-07-27

Applicant: Mitsubishi Electric Corporation

Inventor： Takuro Mori ,  Hayato Nagamizu ,  Yoshitaka Otsubo

IPC: H01L23/48 ,  H01R9/00 ,  H01L21/00 ,  H01L23/10 ,  H01L21/48 ,  H01L21/56 ,  H01L23/049 ,  H01L23/495 ,  H01L23/24 ,  H01L23/373 ,  H01L23/498

Abstract: A semiconductor device includes: a base plate; an insulating substrate provided on an upper surface of the base plate; a conductive pattern provided on an upper surface of the insulating substrate; a semiconductor chip mounted on an upper surface of the conductive pattern; a case surrounding the base plate, the insulating substrate, the conductive pattern, and the semiconductor chip; a sealing resin sealing an interior of the case; and an external connection terminal provided to the case. One end portion of the external connection terminal is connected to the conductive pattern, the case has a terminal insertion portion enabling insertion of the other end portion of the external connection terminal in a peripheral wall portion thereof, and a portion of the external connection terminal other than the other end portion is sealed by the sealing resin with the other end portion being inserted in the terminal insertion portion.

公开(公告)号：US09887154B2

公开(公告)日：2018-02-06

申请号：US14678369

申请日：2015-04-03

Applicant: Mitsubishi Electric Corporation

Inventor： Takuya Takahashi ,  Yoshitaka Otsubo

IPC: H01L23/498 ,  H01L23/053 ,  H01L23/10 ,  H01L23/40 ,  H01L23/04 ,  H01L23/373 ,  H01L23/00

CPC classification number: H01L23/49894 ,  H01L23/04 ,  H01L23/053 ,  H01L23/10 ,  H01L23/3735 ,  H01L23/4006 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/291 ,  H01L2224/32227 ,  H01L2224/48105 ,  H01L2224/48159 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2924/00014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes an insulating substrate including a substrate, a metal pattern formed on an upper surface of the substrate, and a metal film formed on a lower surface of the substrate, a semiconductor element fixed on the metal pattern, a case surrounding the metal pattern and having a contact portion maintained in contact with the upper surface of the substrate, and an adhesive with which the case and a portion of the upper surface of the substrate outside a portion maintained in contact with the contact portion are bonded together, wherein a plurality of through holes are formed in a peripheral portion of the case, the through holes extending vertically through the case, and wherein the metal film exists in at least part of a place right below the contact portion.

公开(公告)号：US09627293B2

公开(公告)日：2017-04-18

申请号：US14696199

申请日：2015-04-24

Applicant: Mitsubishi Electric Corporation

Inventor： Rei Yoneyama ,  Kozo Harada ,  Isao Oshima ,  Yoshitaka Otsubo ,  Rena Kawahara

IPC: H01L23/427 ,  H01L21/48 ,  H01L23/367 ,  H01L23/544

CPC classification number: H01L23/4275 ,  H01L21/4871 ,  H01L23/3675 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2924/0002 ,  Y10T428/24802 ,  H01L2924/00

Abstract: In a conventional semiconductor device, a pattern serving as a heat dissipating material is formed by applying a phase transition material. Provided is a semiconductor device that can reduce collapse of a pattern shape even if a shock is applied to the pattern formed with the phase transition material that is liquefied when the environmental temperature is not sufficiently controlled. The semiconductor device includes semiconductor elements mounted inside a semiconductor module (10); a heat radiating surface (13), formed in the semiconductor module (10), dissipating heat generated in the semiconductor elements to a heat radiator; a pattern (14) formed on the heat radiating surface and made from a phase transition material; and a film (15) serving as a first film that covers the pattern (14).