SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20200111772A1

    公开(公告)日:2020-04-09

    申请号:US16088735

    申请日:2016-08-10

    IPC分类号: H01L25/18 H01L23/00

    摘要: First and second circuit patterns (5,6) are provided on an insulating substrate (1). First and second semiconductor chips (7,8) are provided on the first circuit pattern (5). A relay circuit pattern (10) is provided between the first semiconductor chip (7) and the second semiconductor chip (8) on the insulating substrate (1). A wire (11) is continuously connected to the first semiconductor chip (7), the relay circuit pattern (10), the second semiconductor chip (8) and the second circuit pattern (6) which are sequentially arranged in one direction.

    SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20190206757A1

    公开(公告)日:2019-07-04

    申请号:US16098901

    申请日:2016-09-20

    摘要: A wiring board (2) is provided on a heat radiation plate (1). A semiconductor chip (8) is provided on the wiring board (2). A case housing (10) is provided on the heat radiation plate (1) and surrounds the wiring board (2) and the semiconductor chip (8). Adhesive agent (11) bonds a lower surface of the case housing (10) and an upper surface peripheral portion of the heat radiation plate (1). A sealing material (13) is filled in the case housing (10) and covers the wiring board (2) and the semiconductor chip (8). A step portion (16,17) is provided to at least one of the lower surface of the case housing (10) and the upper surface peripheral portion of the heat radiation plate (1). A side surface of the heat radiation plate (1) and an outer side surface of the case housing (10) are flush with each other.

    POWER SEMICONDUCTOR DEVICE
    5.
    发明申请

    公开(公告)号:US20180261517A1

    公开(公告)日:2018-09-13

    申请号:US15758349

    申请日:2015-12-04

    摘要: An object of the present invention to provide a technique which can put flexibility into positions, positional relationships, and sizes of constituent elements. A power semiconductor device includes: a substrate on which a semiconductor chip is disposed; an electrode which has one end fixed to the substrate and stands upright on the substrate; and an insulating case which houses the electrode and has a part opposed to the other end of the electrode. The power semiconductor device includes a conductive nut which is inserted into the case in the part of the case and a conductive component which electrically connects the other end of the electrode and the nut.

    SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE

    公开(公告)号:US20200185359A1

    公开(公告)日:2020-06-11

    申请号:US16632029

    申请日:2018-08-27

    IPC分类号: H01L25/07 H01L23/00

    摘要: Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.