SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE

    公开(公告)号:US20200185359A1

    公开(公告)日:2020-06-11

    申请号:US16632029

    申请日:2018-08-27

    IPC分类号: H01L25/07 H01L23/00

    摘要: Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20190206757A1

    公开(公告)日:2019-07-04

    申请号:US16098901

    申请日:2016-09-20

    摘要: A wiring board (2) is provided on a heat radiation plate (1). A semiconductor chip (8) is provided on the wiring board (2). A case housing (10) is provided on the heat radiation plate (1) and surrounds the wiring board (2) and the semiconductor chip (8). Adhesive agent (11) bonds a lower surface of the case housing (10) and an upper surface peripheral portion of the heat radiation plate (1). A sealing material (13) is filled in the case housing (10) and covers the wiring board (2) and the semiconductor chip (8). A step portion (16,17) is provided to at least one of the lower surface of the case housing (10) and the upper surface peripheral portion of the heat radiation plate (1). A side surface of the heat radiation plate (1) and an outer side surface of the case housing (10) are flush with each other.

    SEMICONDUCTOR DEVICE
    5.
    发明申请

    公开(公告)号:US20210217675A1

    公开(公告)日:2021-07-15

    申请号:US17058283

    申请日:2018-08-08

    摘要: A semiconductor device includes a first electrode; a second electrode; a resin case surrounding the first electrode and the second electrode; and a resin insulating part made of a material the same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case. The resin insulating part contacts an inner wall of the resin case or is separated from the inner wall of the resin case. A move positioned between the first electrode and the second electrode is formed at the resin insulating part, and thus a space in which the resin insulating part does not exist or a material different from the resin insulating part is provided between the first electrode and the second electrode.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND MOVING BODY

    公开(公告)号:US20200243411A1

    公开(公告)日:2020-07-30

    申请号:US16487017

    申请日:2017-05-10

    IPC分类号: H01L23/31 H01L23/24 H01L25/18

    摘要: An object is to provide a technique capable of fixing a cover to a container body without using a dedicated fixation mechanism and fixation member. A semiconductor device includes: a container body having a space with an opening; a semiconductor element disposed in the space in the container body; a sealing member disposed in the space in the container body to cover the semiconductor element; and a cover covering the opening of the container body, wherein a convex portion protruding into the space is provided on the cover, and the cover is fixed to the container body only by embedding at least a tip portion of the convex portion in the sealing member which has been cured.

    SEMICONDUCTOR DEVICE
    7.
    发明申请

    公开(公告)号:US20200111772A1

    公开(公告)日:2020-04-09

    申请号:US16088735

    申请日:2016-08-10

    IPC分类号: H01L25/18 H01L23/00

    摘要: First and second circuit patterns (5,6) are provided on an insulating substrate (1). First and second semiconductor chips (7,8) are provided on the first circuit pattern (5). A relay circuit pattern (10) is provided between the first semiconductor chip (7) and the second semiconductor chip (8) on the insulating substrate (1). A wire (11) is continuously connected to the first semiconductor chip (7), the relay circuit pattern (10), the second semiconductor chip (8) and the second circuit pattern (6) which are sequentially arranged in one direction.

    SEMICONDUCTOR MODULE
    8.
    发明申请

    公开(公告)号:US20200185315A1

    公开(公告)日:2020-06-11

    申请号:US16638071

    申请日:2017-11-17

    摘要: A semiconductor module includes: an insulating substrate; a metal pattern provided on the insulating substrate; a solder resist provided on the metal pattern; a semiconductor chip mounted on the metal pattern at an opening portion of the solder resist; and a sealing material sealing the metal pattern, the solder resist and the semiconductor chip, wherein a suction area surrounded by a groove is provided in a portion of the solder resist.

    POWER SEMICONDUCTOR DEVICE
    9.
    发明申请

    公开(公告)号:US20180261517A1

    公开(公告)日:2018-09-13

    申请号:US15758349

    申请日:2015-12-04

    摘要: An object of the present invention to provide a technique which can put flexibility into positions, positional relationships, and sizes of constituent elements. A power semiconductor device includes: a substrate on which a semiconductor chip is disposed; an electrode which has one end fixed to the substrate and stands upright on the substrate; and an insulating case which houses the electrode and has a part opposed to the other end of the electrode. The power semiconductor device includes a conductive nut which is inserted into the case in the part of the case and a conductive component which electrically connects the other end of the electrode and the nut.